Contents
Semiconductors

Vol. 45, No. 6, 2011

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Model of Boron Diffusion from Gas Phase in Silicon Carbide

O. V. Aleksandrov and E. N. Mokhov p. 705  abstract

Electronic Properties of Semiconductors

Electronic Structure and Spectral Characteristics of Zn-Substituted Clathrate Silicides

N. A. Borshch, N. S. Pereslavtseva, and S. I. Kurganskii p. 713  abstract

Energy of Impurity Resonance States in Lead Telluride
with Different Contents of Thallium Impurity

S. A. Nemov, Yu. I. Ravich, and V. A. Korchagin p. 724  abstract

Vacancy Model of Micropipe Annihilation in Epitaxial Silicon Carbide Layers

S. Yu. Davydov and A. A. Lebedev p. 727  abstract

Spectroscopy, Interaction with Radiation

Annealing-Induced Evolution of Optical Properties
of the Multilayered Nanoperiodic SiO_x/ZrO₂ System Containing Si Nanoclusters

A. V. Ershov, D. I. Tetelbaum, I. A. Chugrov, A. I. Mashin, A. N. Mikhaylov,
A. V. Nezhdanov, A. A. Ershov, and I. A. Karabanova p. 731  abstract

Specific Features of Formation of Radiation Defects in the Silicon Layer
in “Silicon-on-Insulator” Structures

K. D. Shcherbachev, V. T. Bublik, V. N. Mordkovich, and D. M. Pazhin p. 738  abstract

Surfaces, Interfaces, and Thin Films

Resonance Propagation of Electrons through Three-Barrier Structures
in a Two-Frequency Electric Field

A. B. Pashkovskii p. 743  abstract

Physical Properties of SnS Thin Films Fabricated by Hot Wall Deposition

S. A. Bashkirov, V. F. Gremenok, and V. A. Ivanov p. 749  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Evolution of the Deformation State and Composition as a Result of Changes
in the Number of Quantum Wells in Multilayered InGaN/GaN Structures

V. P. Kladko, A. V. Kuchuk, N. V. Safriuk, V. F. Machulin, A. E. Belyaev,
R. V. Konakova, B. S. Yavich, B. Ya. Ber, and D. Yu. Kazantsev p. 753  abstract

Drift Velocity of Electrons in Quantum Wells of Selectively Doped In_0.5Ga_0.5As/Al_xIn_1–xAs
and In_0.2Ga_0.8As/Al_xGa_1–xAs Heterostructures in High Electric Fields

J. Poela, K. Poela, R. Raguotis, and V. Jucien p. 761  abstract

Excitonic Spectrum of the ZnO/ZnMgO Quantum Wells

M. A. Bobrov, A. A. Toropov, S. V. Ivanov, A. El-Shaer, A. Bakin, and A. Waag p. 766  abstract

Features of Obtaining Diluted Magnetic Semiconductors
in the System of Narrow-Gap GaInAsSb Alloys

K. D. Moiseev, V. P. Lesnikov, V. V. Podolski, Yu. Kudriavtsev, O. Kudriavtseva,
A. Escobosa, and V. Sanchez-Resendiz p.771  abstract

Circular Polarization of the Photoluminescence from a System
of Two-Dimensional A⁺ Centers in a Magnetic Field

P. V. Petrov, Yu. L. Ivánov, and N. S. Averkiev p. 776  abstract

Amorphous, Vitreous, and Organic Semiconductors

Impurity Centers of Tin in Glassy Arsenic Chalcogenides

G. A. Bordovsky, A. Yu. Dashina, A. V. Marchenko, P. P. Seregin, and E. I. Terukov p. 783  abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Anomalous Long-Term Degradation of Photoluminescence in Porous Silicon Layers

D. F. Timokhov and F. P. Timokhov p. 788  abstract

Physics of Semiconductor Devices

High-Efficiency ( = 39.6%, AM 1.5D) Cascade of Photoconverters in Solar Splitting Systems

V. P. Khvostikov, A. S. Vlasov, S. V. Sorokina, N. S. Potapovich,
N. Kh. Timoshina, M. Z. Shvarts, and V. M. Andreev p. 792  abstract

Features of Dynamic Acoustically Induced Modification
of Photovoltaic Parameters of Silicon Solar Cells

O. Ya. Olikh p. 798  abstract

Edge Photoluminescence of Single-Crystal Silicon with a p–n Junction:
Structures Produced by High-Efficiency Solar Cell Technology

A. M. Emel’yanov p. 805  abstract

Electrochemical Capacitance–Voltage Profiling of the Free-Carrier Concentration
in HEMT Heterostructures Based on InGaAs/AlGaAs/GaAs Compounds

P. N. Brunkov, A. A. Gutkin, M. E. Rudinsky, O. I. Ronghin, A. A. Sitnikova, A. A. Shakhmin,
B. Ya. Ber, D. Yu. Kazantsev, A. Yu. Egorov, V. E. Zemlyakov, and S. G. Konnikov p. 811  abstract

Matrices of 960-nm Vertical-Cavity Surface-Emitting Lasers

N. A. Maleev, A. G. Kuzmenkov, A. S. Shulenkov, S. A. Blokhin, M. M. Kulagina,
Yu. M. Zadiranov, V. G. Tikhomirov, A. G. Gladyshev, A. M. Nadtochiy, E. V. Nikitina,
J. A. Lott, V. N. Svede-Shvets, N. N. Ledentsov, and V. M. Ustinov p. 818  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Fabrication of Ordered GaAs Nanowhiskers Using Electron-Beam Lithography

I. P. Soshnikov, D. E. Afanas’ev, G. E. Cirlin, V. A. Petrov, E. M. Tanklevskaya,
Yu. B. Samsonenko, A. D. Bouravlev, A. I. Khrebtov, and V. M. Ustinov p. 822  abstract

Fabrication of Improved-Quality Seed Crystals for Growth of Bulk Silicon Carbide

M. G. Mynbaeva, P. L. Abramov, A. A. Lebedev, A. S. Tregubova, D. P. Litvin,
A. V. Vasiliev, T. Yu. Chemekova, and Yu. N. Makarov p. 828  abstract

A Comment to the Paper by E.A. Tatokhin, A.V. Kadantsev, A.E. Bormontov,
and V.G. Zadorozhniy “A Statistical Method of Deep-Level Transient Spectroscopy
in Semiconductors”

N. A. Yarykin p. 832  abstract

Personalia

Yurii Aronovich Goldberg (1939–2011) p. 835

Errata

Erratum: “Electronic States on Silicon Surface after Deposition and Annealing of SiO_x Films”
[Semiconductors 45, 587 (2011)]

N. A. Vlasenko, P. F. Oleksenko, Z. L. Denisova, N. V. Sopinskii, L. I. Veligura,
E. G. Gule, O. S. Litvin, and M. A. Mukhlyo p.836

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