Contents
Semiconductors

Vol. 44, No. 6, 2010

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Electrical and Optical Properties of Semiconductors

Specific Features of Formation and Evolution of a Longitudinal Autosoliton
in p-InSb in a Longitudinal Magnetic Field

I. K. Kamilov, A. A. Stepurenko, and A. E. Gummetov p. 691  abstract

Features of the Mechanism of Electrical Conductivity of Semiinsulating CdTe Crystals

L. A. Kosyachenko, O. L. Maslyanchuk, S. V. Melnychuk, V. M. Sklyarchuk,
O. V. Sklyarchuk, and T. Aoki p. 699  abstract

Spin-Peierls Transition in the Random Impurity Sublattice of a Semiconductor

A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, and S. I. Goloshchapov p. 705  abstract

Doping of IV–VI Semiconductors and the Energy Spectrum
of Holes with Resonance States Taken Into Account

L. V. Prokofieva, Yu. I. Ravich, D. A. Pshenay-Severin,
P. P. Konstantinov, and A. A. Shabaldin p. 712  abstract

The Effects of Defects on Electrical Properties of Ag₂S at Phase Transition

F. F. Aliev, M. B. Jafarov, and V. I. Eminova p. 719  abstract

Innovations in X-ray-Induced Electron Emission Spectroscopy (XIEES)

K. Ju. Pogrebitsky and M. D. Sharkov p. 723  abstract

Influence of Impurities on the Thermoelectric Properties
of Layered Anisotropic PbBi₄Te₇ Compound: Experiment and Calculations

M. K. Zhitinskaya, S. A. Nemov, A. A. Muhtarova, L. E. Shelimova,
T. E. Svechnikova, and P. P. Konstantinov p. 729  abstract

Phonon Drag of Electrons in Ag₂S

S. A. Aliev, F. F. Aliev, Z. S. Gasanov, S. M. Abdullayev, and R. I. Selim-zade p. 734  abstract

Semiconductor Structures, Interfaces, and Surfaces

Nature of Forward and Reverse Saturation Currents
in Metal–Semiconductor Contacts with the Schottky Barrier

N. A. Torkhov p. 737  abstract

Effect of Microwave Treatment on Current Flow Mechanisms
in Au–TiB_x–Al–Ti–n⁺–n–n⁺-GaN–Al₂O₃ Ohmic Contacts

A. E. Belyaev, N. S. Boltovets, S. A. Vitusevich, V. N. Ivanov, R. V. Konakova,
Ya. Ya. Kudryk, A. A. Lebedev, V. V. Milenin, Yu. N. Sveshnikov, and V. N. Sheremet p. 745  abstract

Mechanism of Compensation of the Donor Impurity
in the Near-Surface Layer of GaP during Heat Treatment in Phosphorus Vapors

Yu. K. Krutogolov p. 752  abstract

Low-Dimensional Systems

Wannier–Stark States in a Superlattice of InAs/GaAs Quantum Dots

M. M. Sobolev, A. P. Vasil’ev, and V. N. Nevedomskii p.761  abstract

Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites

Vibronic Properties of Organic Semiconductors Based
on Phthalocyanine Complexes with Asymmetrically Distributed Electron Density

I. A. Belogorokhov, M. N. Martishov, D. A. Mamichev, M. A. Dronov,
V. E. Pushkarev, Yu. V. Ryabchikov, P. A. Forsh, L. G. Tomilova, and D. R. Khokhlov p. 766  abstract

Physics of Semiconductor Devices

Application of ITO/Al Reflectors for Increasing the Efficiency
of Single-Crystal Silicon Solar Cells

V. R. Kopach, M. V. Kirichenko, G. S. Khrypunov, and R. V. Zaitsev p. 772  abstract

A High-Temperature Radiation-Resistant Rectifier Based on p⁺–n Junctions
in 4H-SiC Ion-Implanted with Aluminum

E. V. Kalinina, V. G. Kossov, R. R. Yafaev, A. M. Strel’chuk, and G. N. Violina p. 778  abstract

Pulsed Semiconductor Lasers with Higher Optical Strength of Cavity Output Mirrors

A. N. Petrunov, A. A. Podoskin, I. S. Shashkin, S. O. Slipchenko, N. A. Pikhtin,
T. A. Nalet, N. V. Fetisova, L. S. Vavilova, A. V. Lyutetskiy, P. A. Alekseev,
A. N. Titkov, and I. S. Tarasov p. 789  abstract

Mechanism of the GaN LED Efficiency Falloff with Increasing Current

N. I. Bochkareva, V. V. Voronenkov, R. I. Gorbunov, A. S. Zubrilov, Y. S. Lelikov,
F. E. Latyshev, Y. T. Rebane, A. I. Tsyuk, and Y. G. Shreter p. 794  abstract

Features of the Light Current–Voltage Characteristics
of Bifacial Solar Cells Based on Thin CdTe Layers

A. V. Meriuts, G. S. Khrypunov, T. N. Shelest, and N. V. Deyneko p. 801  abstract

Two-Band Lasing in Epitaxially Stacked Tunnel-Junction Semiconductor Lasers

D. A. Vinokurov, M. A. Ladugin, A. V. Lyutetskii, A. A. Marmalyuk, A. N. Petrunov,
N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, A. L. Stankevich, N. V. Fetisova,
I. S. Shashkin, N. S. Averkiev, and I. S. Tarasov p. 805  abstract

A Monolithic White LED with an Active Region Based
on InGaN QWs Separated by Short-Period InGaN/GaN Superlattices

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev,
N. V. Kryzhanovskaya, M. A. Synitsin, V. S. Sizov, A. L. Zakgeim, and M. N. Mizerov p. 808  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Magnetron-Assisted Deposition of Thin (SiC)_1–x(AlN)_x Alloy Films

M. K. Gusejnov, M. K. Kurbanov, B. A. Bilalov, and G. K. Safaraliev p. 812  abstract

Fabrication of Heterostructures Based on Layered Nanocrystalline Silicon Carbide Polytypes

A. V. Semenov, A. V. Lopin, V. M. Puzikov, V. N. Baumer, and I. N. Dmitruk p. 816  abstract

Effect of Annealing on the Structure of Bi₂Te₃–Bi₂Se₃ Films

N. M. Abdullayev, S. I. Mekhtiyeva, N. R. Memmedov,
M. A. Ramazanov, and A. M. Kerimova p. 824  abstract

Optical and Structural Properties of InGaN/GaN Short-Period Superlattices
for the Active Region of Light-Emitting Diodes

N. V. Kryzhanovskaya, W. V. Lundin, A. E. Nikolaev, A. F. Tsatsul’nikov,
A. V. Sakharov, M. M. Pavlov, N. A. Cherkachin, M. J. Hÿtch, G. A. Valkovsky,
M. A. Yagovkina, and S. O. Usov p.828  abstract

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