Contents
Semiconductors
Vol. 44, No. 6, 2010
A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.
Electrical and Optical Properties of Semiconductors
Specific Features of Formation and Evolution of a Longitudinal Autosoliton
in p-InSb in a Longitudinal Magnetic Field
I. K. Kamilov, A. A. Stepurenko, and A. E. Gummetov p. 691 abstract
Features of the Mechanism of Electrical Conductivity of Semiinsulating CdTe Crystals
L. A. Kosyachenko, O. L. Maslyanchuk, S. V. Melnychuk, V. M. Sklyarchuk,
O. V. Sklyarchuk, and T. Aoki p. 699 abstract
Spin-Peierls Transition in the Random Impurity Sublattice of a Semiconductor
A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, and S. I. Goloshchapov p. 705 abstract
Doping of IVVI Semiconductors and the Energy Spectrum
of Holes with Resonance States Taken Into Account
L. V. Prokofieva, Yu. I. Ravich, D. A. Pshenay-Severin,
P. P. Konstantinov, and A. A. Shabaldin p. 712 abstract
The Effects of Defects on Electrical Properties of Ag2S at Phase Transition
F. F. Aliev, M. B. Jafarov, and V. I. Eminova p. 719 abstract
Innovations in X-ray-Induced Electron Emission Spectroscopy (XIEES)
K. Ju. Pogrebitsky and M. D. Sharkov p. 723 abstract
Influence of Impurities on the Thermoelectric Properties
of Layered Anisotropic PbBi4Te7 Compound: Experiment and Calculations
M. K. Zhitinskaya, S. A. Nemov, A. A. Muhtarova, L. E. Shelimova,
T. E. Svechnikova, and P. P. Konstantinov p. 729 abstract
Phonon Drag of Electrons in Ag2S
S. A. Aliev, F. F. Aliev, Z. S. Gasanov, S. M. Abdullayev, and R. I. Selim-zade p. 734 abstract
Semiconductor Structures, Interfaces, and Surfaces
Nature of Forward and Reverse Saturation Currents
in MetalSemiconductor Contacts with the Schottky Barrier
N. A. Torkhov p. 737 abstract
Effect of Microwave Treatment on Current Flow Mechanisms
in AuTiBxAlTin+nn+-GaNAl2O3 Ohmic Contacts
A. E. Belyaev, N. S. Boltovets, S. A. Vitusevich, V. N. Ivanov, R. V. Konakova,
Ya. Ya. Kudryk, A. A. Lebedev, V. V. Milenin, Yu. N. Sveshnikov, and V. N. Sheremet p. 745 abstract
Mechanism of Compensation of the Donor Impurity
in the Near-Surface Layer of GaP during Heat Treatment in Phosphorus Vapors
Yu. K. Krutogolov p. 752 abstract
Low-Dimensional Systems
WannierStark States in a Superlattice of InAs/GaAs Quantum Dots
M. M. Sobolev, A. P. Vasilev, and V. N. Nevedomskii p.761 abstract
Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites
Vibronic Properties of Organic Semiconductors Based
on Phthalocyanine Complexes with Asymmetrically Distributed Electron Density
I. A. Belogorokhov, M. N. Martishov, D. A. Mamichev, M. A. Dronov,
V. E. Pushkarev, Yu. V. Ryabchikov, P. A. Forsh, L. G. Tomilova, and D. R. Khokhlov p. 766 abstract
Physics of Semiconductor Devices
Application of ITO/Al Reflectors for Increasing the Efficiency
of Single-Crystal Silicon Solar Cells
V. R. Kopach, M. V. Kirichenko, G. S. Khrypunov, and R. V. Zaitsev p. 772 abstract
A High-Temperature Radiation-Resistant Rectifier Based on p+n Junctions
in 4H-SiC Ion-Implanted with Aluminum
E. V. Kalinina, V. G. Kossov, R. R. Yafaev, A. M. Strelchuk, and G. N. Violina p. 778 abstract
Pulsed Semiconductor Lasers with Higher Optical Strength of Cavity Output Mirrors
A. N. Petrunov, A. A. Podoskin, I. S. Shashkin, S. O. Slipchenko, N. A. Pikhtin,
T. A. Nalet, N. V. Fetisova, L. S. Vavilova, A. V. Lyutetskiy, P. A. Alekseev,
A. N. Titkov, and I. S. Tarasov p. 789 abstract
Mechanism of the GaN LED Efficiency Falloff with Increasing Current
N. I. Bochkareva, V. V. Voronenkov, R. I. Gorbunov, A. S. Zubrilov, Y. S. Lelikov,
F. E. Latyshev, Y. T. Rebane, A. I. Tsyuk, and Y. G. Shreter p. 794 abstract
Features of the Light CurrentVoltage Characteristics
of Bifacial Solar Cells Based on Thin CdTe Layers
A. V. Meriuts, G. S. Khrypunov, T. N. Shelest, and N. V. Deyneko p. 801 abstract
Two-Band Lasing in Epitaxially Stacked Tunnel-Junction Semiconductor Lasers
D. A. Vinokurov, M. A. Ladugin, A. V. Lyutetskii, A. A. Marmalyuk, A. N. Petrunov,
N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, A. L. Stankevich, N. V. Fetisova,
I. S. Shashkin, N. S. Averkiev, and I. S. Tarasov p. 805 abstract
A Monolithic White LED with an Active Region Based
on InGaN QWs Separated by Short-Period InGaN/GaN Superlattices
A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev,
N. V. Kryzhanovskaya, M. A. Synitsin, V. S. Sizov, A. L. Zakgeim, and M. N. Mizerov p. 808 abstract
Fabrication, Treatment, and Testing of Materials and Structures
Magnetron-Assisted Deposition of Thin (SiC)1x(AlN)x Alloy Films
M. K. Gusejnov, M. K. Kurbanov, B. A. Bilalov, and G. K. Safaraliev p. 812 abstract
Fabrication of Heterostructures Based on Layered Nanocrystalline Silicon Carbide Polytypes
A. V. Semenov, A. V. Lopin, V. M. Puzikov, V. N. Baumer, and I. N. Dmitruk p. 816 abstract
Effect of Annealing on the Structure of Bi2Te3Bi2Se3 Films
N. M. Abdullayev, S. I. Mekhtiyeva, N. R. Memmedov,
M. A. Ramazanov, and A. M. Kerimova p. 824 abstract
Optical and Structural Properties of InGaN/GaN Short-Period Superlattices
for the Active Region of Light-Emitting Diodes
N. V. Kryzhanovskaya, W. V. Lundin, A. E. Nikolaev, A. F. Tsatsulnikov,
A. V. Sakharov, M. M. Pavlov, N. A. Cherkachin, M. J. Hÿtch, G. A. Valkovsky,
M. A. Yagovkina, and S. O. Usov p.828 abstract
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