Contents
Semiconductors
Vol. 43, No. 5, 2009
Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.
Atomic Structure and Nonelectronic Properties of Semiconductors
Fractal Character of the Distribution of Surface Potential Irregularities in Epitaxial n-GaAs (100)
N. A. Torkhov and V. G. Bozhkov p. 551 abstract
Redistribution of Al in Implanted SiC Layers as a Result of Thermal Annealing
O. V. Aleksandrov and E. V. Kalinina p. 557 abstract
Electronic and Optical Properties of Semiconductors
Electronic Structure of Zn-Substituted Germanium Clathrates
N. A. Borshch, N. S. Pereslavtseva, and S. I. Kurganskii p. 563 abstract
Optical and Paramagnetic Properties of Synthetic Diamond Crystals Irradiated
with Electrons and Annealed
N. A. Poklonski, G. A. Gusakov, V. G. Bayev, and N. M. Lapchuk p. 568 abstract
Persistent Photoconductivity in MgZnO Alloys
A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, H. S. Kim,
D. P. Norton, S. J. Pearton, and A. I. Belogorokhov p. 577 abstract
Photocurrent Spectra in Parametrical Form
and their Discrete Wavelet Decomposition for CdZnTe Alloys
A. V. But, V. P. Mygal, and A. S. Phomin p. 581 abstract
Laplace-DLTS Method with the Regularization Parameter Chosen from the L Curve
M. N. Levin, A. V. Tatarintzev, and A. E. Akhkubekov p. 586 abstract
Semiconductor Structures, Interfaces, and Surfaces
Optical Properties of the Si-Doped GaN/Al2O3 Films
N. S. Zayats, P. O. Gentsar, V. G. Boiko, O. S. Litvin, M. V. Vuychik,
A. V. Stronski, and I. B. Yanchuk p. 590 abstract
Dislocation Electrical Conductivity of Synthetic Diamond Films
S. N. Samsonenko and N. D. Samsonenko p. 594 abstract
Specific Features of Solid-Phase Recrystallization
of Silicon-on-Sapphire Structures Amorphized by Oxygen Ions
P. A. Aleksandrov, K. D. Demakov, S. G. Shemardov, and Yu. Yu. Kuznetsov p. 599 abstract
Mechanism of Forward Current Transport in Modified-Surface Au–CdTe Photodiodes
V. P. Makhnij, Yu. N. Bojko, and N. V. Skrypnyk p. 602 abstract
Nonlinear Thermopower in Bipolar Semiconductor Samples
A. Konin p. 604 abstract
Structure and Properties of CdxHg1–xTe–Metal Contacts
V. I. Stafeev p. 608 abstract
Effect of Annealing on the Effective Barrier Height and Ideality Factor
of Nickel Schottky Contacts to 4H-SiC
A. S. Potapov, P. A. Ivanov, and T. P. Samsonova p. 612 abstract
Low-Dimensional Systems
High-frequency Conductivity of a Thin Cylindrical Semiconductor Wire
at Arbitrary Temperatures
I. A. Kuznetsova, A. A. Yushkanov, and R. R. Khadchukaev p. 617 abstract
Thermoelectric Properties of Symmetric
and Asymmetric Double Quantum Well Structures
I. V. Sur p. 624 abstract
Width of the Excitonic Absorption Line in AlxGa1–xAs Alloys
M. S. Markosov and R. P. Seisyan p. 629 abstract
Anomalous Spin Splitting of Electrons in Type-II InSb Quantum Dots in InAs
Ya. V. Terent’ev, O. G. Lyublinskaya, A. A. Toropov, B. Ya. Meltser, A. N. Semenov,
V. A. Solov’ev, and S. V. Ivanov p. 635 abstract
Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites
Photoconductivity of Organic Polymer Films Doped
with Porous Silicon Nanoparticles and Ionic Polymethine Dyes
N. A. Davidenko, V. A. Skrichevsky, A. A. Ishchenko, A. Yu. Karlash, and E. V. Mokrinskaya p. 640 abstract
Physics of Semiconductor Devices
Current Flow and Potential Efficiency of Solar Cells Based on GaAs and GaSb p–n Junctions
V. M. Andreev, V. V. Evstropov, V. S. Kalinovsky, V. M. Lantratov, and V. P. Khvostikov p. 644 abstract
Mechanisms of Negative Resistivity and Generation of Terahertz Radiation
in A Short-Channel In0.53Ga0.47As/In0.52Al0.48As Transistor
M. L. Orlov and L. K. Orlov p. 652 abstract
Emission Distribution in GaInAsSb/GaSb Flip-Chip Diodes
A. L. Zakgeim, N. D. Il’inskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyi,
A. E. Cherniakov, and A. A. Shlenskii p. 662 abstract
Solar Cells Based on Gallium Antimonide
V. M. Andreev, S. V. Sorokina, N. Kh. Timoshina, V. P. Khvostikov, and M. Z. Shvarts p. 668 abstract
Light-Emitting Diodes of “Warm” White Luminescence on the Basis of p–n Heterostructures
of the InGaN/AlGaN/GaN Type Coated with Phosphors Made of Yttrium–Gadolinium Garnets
N. P. Soshchin, N. A. Galchina, L. M. Kogan, S. S. Shirokov, and A. E. Yunovich p. 672 abstract
Self-Correction of Field-Effect Transistor Characteristics in the Mode
of Spontaneous Space-Charge Ion Polarization of Gate Oxide
A. G. Zhdan, V. G. Naryshkina, and G. V. Chucheva p. 677 abstract
Quantum Dot Semiconductor Lasers of the 1.3 m Wavelength Range
with High Temperature Stability of the Lasing Wavelength (0.2 nm/K)
L. Ya. Karachinsky, I. I. Novikov, Yu. M. Shernyakov, N. Yu. Gordeev,
A. S. Payusov, M. V. Maximov, S. S. Mikhrin, M. B. Lifshits, V. A. Shchukin,
P. S. Kop’ev, N. N. Ledentsov, and D. Bimberg p. 680 abstract
Fabrication, Treatment, and Testing of Materials and Structures
Low-temperature Production of Silicon Carbide Films of Different Polytypes
A. V. Semenov, V. M. Puzikov, E. P. Golubova, V. N. Baumer, and M. V. Dobrotvorskaya p. 685 abstract
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