Contents
Semiconductors


Vol. 43, No. 5, 2009

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.


Atomic Structure and Nonelectronic Properties of Semiconductors

Fractal Character of the Distribution of Surface Potential Irregularities in Epitaxial n-GaAs (100)

N. A. Torkhov and V. G. Bozhkov p. 551  abstract

Redistribution of Al in Implanted SiC Layers as a Result of Thermal Annealing

O. V. Aleksandrov and E. V. Kalinina p. 557  abstract


Electronic and Optical Properties of Semiconductors

Electronic Structure of Zn-Substituted Germanium Clathrates

N. A. Borshch, N. S. Pereslavtseva, and S. I. Kurganskii p. 563  abstract

Optical and Paramagnetic Properties of Synthetic Diamond Crystals Irradiated
with Electrons and Annealed

N. A. Poklonski, G. A. Gusakov, V. G. Bayev, and N. M. Lapchuk p. 568  abstract

Persistent Photoconductivity in MgZnO Alloys

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, H. S. Kim,
D. P. Norton, S. J. Pearton, and A. I. Belogorokhov
p. 577  abstract

Photocurrent Spectra in Parametrical Form
and their Discrete Wavelet Decomposition for CdZnTe Alloys

A. V. But, V. P. Mygal, and A. S. Phomin p. 581  abstract

Laplace-DLTS Method with the Regularization Parameter Chosen from the L Curve

M. N. Levin, A. V. Tatarintzev, and A. E. Akhkubekov p. 586  abstract


Semiconductor Structures, Interfaces, and Surfaces

Optical Properties of the Si-Doped GaN/Al2O3 Films

N. S. Zayats, P. O. Gentsar, V. G. Boiko, O. S. Litvin, M. V. Vuychik,
A. V. Stronski, and I. B. Yanchuk
p. 590  abstract

Dislocation Electrical Conductivity of Synthetic Diamond Films

S. N. Samsonenko and N. D. Samsonenko p. 594  abstract

Specific Features of Solid-Phase Recrystallization
of Silicon-on-Sapphire Structures Amorphized by Oxygen Ions

P. A. Aleksandrov, K. D. Demakov, S. G. Shemardov, and Yu. Yu. Kuznetsov p. 599  abstract

Mechanism of Forward Current Transport in Modified-Surface Au–CdTe Photodiodes

V. P. Makhnij, Yu. N. Bojko, and N. V. Skrypnyk p. 602  abstract

Nonlinear Thermopower in Bipolar Semiconductor Samples

A. Konin p. 604  abstract

Structure and Properties of CdxHg1–xTe–Metal Contacts

V. I. Stafeev p. 608  abstract

Effect of Annealing on the Effective Barrier Height and Ideality Factor
of Nickel Schottky Contacts to 4H-SiC

A. S. Potapov, P. A. Ivanov, and T. P. Samsonova p. 612  abstract


Low-Dimensional Systems

High-frequency Conductivity of a Thin Cylindrical Semiconductor Wire
at Arbitrary Temperatures

I. A. Kuznetsova, A. A. Yushkanov, and R. R. Khadchukaev p. 617  abstract

Thermoelectric Properties of Symmetric
and Asymmetric Double Quantum Well Structures

I. V. Sur p. 624  abstract

Width of the Excitonic Absorption Line in AlxGa1–xAs Alloys

M. S. Markosov and R. P. Seisyan p. 629  abstract

Anomalous Spin Splitting of Electrons in Type-II InSb Quantum Dots in InAs

Ya. V. Terent’ev, O. G. Lyublinskaya, A. A. Toropov, B. Ya. Meltser, A. N. Semenov,
V. A. Solov’ev, and S. V. Ivanov
p. 635  abstract


Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites

Photoconductivity of Organic Polymer Films Doped
with Porous Silicon Nanoparticles and Ionic Polymethine Dyes

N. A. Davidenko, V. A. Skrichevsky, A. A. Ishchenko, A. Yu. Karlash, and E. V. Mokrinskaya p. 640  abstract


Physics of Semiconductor Devices

Current Flow and Potential Efficiency of Solar Cells Based on GaAs and GaSb p–n Junctions

V. M. Andreev, V. V. Evstropov, V. S. Kalinovsky, V. M. Lantratov, and V. P. Khvostikov p. 644  abstract

Mechanisms of Negative Resistivity and Generation of Terahertz Radiation
in A Short-Channel In0.53Ga0.47As/In0.52Al0.48As Transistor

M. L. Orlov and L. K. Orlov p. 652  abstract

Emission Distribution in GaInAsSb/GaSb Flip-Chip Diodes

A. L. Zakgeim, N. D. Il’inskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyi,
A. E. Cherniakov, and A. A. Shlenskii
p. 662  abstract

Solar Cells Based on Gallium Antimonide

V. M. Andreev, S. V. Sorokina, N. Kh. Timoshina, V. P. Khvostikov, and M. Z. Shvarts p. 668  abstract

Light-Emitting Diodes of “Warm” White Luminescence on the Basis of pn Heterostructures
of the InGaN/AlGaN/GaN Type Coated with Phosphors Made of Yttrium–Gadolinium Garnets

N. P. Soshchin, N. A. Galchina, L. M. Kogan, S. S. Shirokov, and A. E. Yunovich p. 672  abstract

Self-Correction of Field-Effect Transistor Characteristics in the Mode
of Spontaneous Space-Charge Ion Polarization of Gate Oxide

A. G. Zhdan, V. G. Naryshkina, and G. V. Chucheva p. 677  abstract

Quantum Dot Semiconductor Lasers of the 1.3 m Wavelength Range
with High Temperature Stability of the Lasing Wavelength (0.2 nm/K)

L. Ya. Karachinsky, I. I. Novikov, Yu. M. Shernyakov, N. Yu. Gordeev,
A. S. Payusov, M. V. Maximov, S. S. Mikhrin, M. B. Lifshits, V. A. Shchukin,
P. S. Kop’ev, N. N. Ledentsov, and D. Bimberg
p. 680  abstract


Fabrication, Treatment, and Testing of Materials and Structures

Low-temperature Production of Silicon Carbide Films of Different Polytypes

A. V. Semenov, V. M. Puzikov, E. P. Golubova, V. N. Baumer, and M. V. Dobrotvorskaya p. 685  abstract


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