Contents
Semiconductors

Vol. 42, No. 5, 2008

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Study of Self-Organization in Disordered Materials Using Information Theory

T. G. Avacheva, N. V. Bodyagin, S. P. Vikhrov, and S. M. Mursalov p. 499  abstract

Comparative Analysis of the Mechanisms of Interface Formation in a Film Structure
under Equilibrium and Strongly Nonequilibrium Condition

A. P. Belyaev, V. P. Rubets, V. V. Antipov, and Kh. A. Toshkhodzhaev p. 505  abstract

Electronic and Optical Properties of Semiconductors

Optical and Photoelectrical Properties of AgCd₂GaS₄ Single-Crystal Compounds

L. V. Bulatetskaya, V. V. Bozhko, G. E. Davidyuk, and O. V. Parasyuk p. 508  abstract

Extrinsic Conductivity of Hg₃In₂Te₆ Single Crystals

L. A. Kosyachenko, I. I. German, I. M. Rarenko, Z. I. Zakharuk, and E. S. Nikonyuk p. 514  abstract

Electroluminescence and Phototrigger Effect in Single Crystals of GaS_xSe_1–x Alloys

A. G. Kyazym-Zade, V. M. Salmanov, A. G. Mokhtari, V. V. Dadashova, and A. A. Agaeva p. 518  abstract

Y and Z Luminescence of Polycrystalline Cadmium Telluride Grown
by a Nonequilibrium Reaction of the Direct Synthesis of Components

V. V. Ushakov and Yu. V. Klevkov p. 522  abstract

Specific Features of Intrinsic Photoconductivity Spectra
of Copper-Compensated Indium Phosphide

Ph. V. Makarenko, N. N. Pribylov, S. I. Rembeza, and V. A. Mel’nik p. 528  abstract

Semiconductor Structures, Interfaces, and Surfaces

Study of the Properties of the Surface of Gallium Arsenide by Scanning Atomic Force Microscopy

V. G. Bozhkov, N. A. Torkhov, I. V. Ivonin, and V. A. Novikov p. 531  abstract

Resonance Tunneling of Charge Carriers in Photoexcited Type-II ZnSe/BeTe Heterostructures

S. V. Zaitsev, A. A. Maksimov, I. I. Tartakovski, D. R. Yakovlev, and A. Waag p. 540  abstract

Low-Dimensional Systems

Infrared Transmittance Spectra of Photoluminescent Oxide Films
with Si and Ge Quantum Dots Formed by Pulsed Laser Ablation

I. P. Lisovskyy, S. A. Zlobin, É. B. Kaganovich, É. G. Manolov, and E. V. Begun p. 545  abstract

Theoretical Study of Auger Recombination Processes in Deep Quantum Wells

L. V. Danilov and G. G. Zegrya p. 550  abstract

Threshold Characteristics of an IR Laser Based on Deep InAsSb/AlSb Quantum Well

L. V. Danilov and G. G. Zegrya p. 557  abstract

Critical Thickness for the Stranski–Krastanov Transition Treated with the Effect of Segregation

D. V. Yurasov and Yu. N. Drozdov p. 563  abstract

High-Frequency Properties of Double-Well Nanostructures

V. F. Elesin and I. Yu. Kateev p. 571  abstract

Enhancement of Photoluminescence of Structures with Nanocrystalline Silicon Stimulated
by Low-Dose Irradiation with -Ray Photons

I. P. Lisovskyy, I. Z. Indutni, M. V. Muravskaya, V. V. Voitovich,
E. G. Gule, and P. E. Shepelyavy p. 576  abstract

Hysteresis of Tunnel Current in w-GaN/AlGaN(0001) Double-Barrier Structures

A. N. Razzhuvalov and S. N. Grinyaev p. 580  abstract

Nature of Damped Current Oscillations in the Formation of a Static Acoustoelectric Domain
in a n-InGaAs/GaAs Quantum-Well Heterostructure

P. A. Belevski, M. N. Vinoslavski, V. N. Poroshin, and I. V. Stroganova p. 589  abstract

Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites

Electron Diffraction Studies of Short-Range Order Parameters in Amorphous Yb_1–xSm_xAs₂S₄ Films

É. Sh. Hajiyev and A. I. Madadzade p. 593  abstract

Thermal Instability of Silicon Fullerenes Stabilized with Hydrogen: Computer Simulation

A. E. Galashev p. 596  abstract

Intrinsic Luminescence of Tb in Metal–Polymer Complexes of Polyamide Acids

É. A. Lebedev, M. Ya. Goikhman, D. M. Zhigunov, I. V. Podeshvo, S. E. Nikitin,
P. A. Forsh, V. V. Kudryavtsev, and A. V. Yakimanski p. 604  abstract

Physics of Semiconductor Devices

A Cascade Laser on Shallow-Donor Transitions in -Doped GaAs/AlGaAs Superlattices

N. A. Bekin and V. N. Shastin p. 608  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Features of the Spatial Distribution of Indium in InGaN Epitaxial Layers Grown
by Plasma-Assisted Molecular Beam Epitaxy

V. N. Jmerik, A. M. Mizerov, T. V. Shubina, D. S. Plotnikov, M. V. Zamoryanskaya,
M. A. Yagovkina, Ya. V. Domracheva, A. A. Sitnikova, and S. V. Ivanov p. 616  abstract

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