Contents
Semiconductors

Vol. 41, No. 5, 2007

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

The 8th International Workshop on Beam Injection Assessment of Microstructures
in Semiconductors, June 11–14, 2006, St. Petersburg, Russia

AFM Application for in situ Study of Adsorption Processes

E. A. Sosnov, S. A. Belova, and A. A. Malygin p. 495  abstract

AFM Examination of Nanolayers Synthesised by the Molecular Layering Method
on the Surface of Manufacturing Glasses

E. A. Sosnov, V. P. Dorofeev, A. A. Malkov, A. A. Malygin,
N. A. Kulikov, and G. L. Brusilovsky p. 498  abstract

Application of EBIV Technique for Investigation of Electrophysical Parameters
of Devices Based on HTSC

S. V. Baryshev, A. V. Bobyl, and O. P. Kostyleva p. 502  abstract

Microstructure Evolution and Magnetoresistance of the A-site Ordered Ba-Doped Manganites

S. V. Trukhanov, L. S. Lobanovski, M. V. Bushinsky, V. A. Khomchenko,
V. V. Fedotova, I. O. Troyanchuk, and H. Szymczak p. 507  abstract

Cathodoluminescence Properties of Yttrium Aluminum Garnet Doped with Eu²⁺ and Eu³⁺ Ions

A. N. Trofimov, M. A. Petrova, and M. V. Zamoryanskaya p. 512  abstract

Simulation of e-Beam Penetration through Multilayer Structures

S. S. Borisov and S. I. Zaitsev p. 516  abstract

Atomic Structure and Nonelectronic Properties of Semiconductors

Reconstruction of the InSb (111)In Surface as a Result of Sulfur Adsorption

M. V. Lebedev, M. Shimomura, and Y. Fukuda p. 521  abstract

Electronic and Optical Properties of Semiconductors

Alternating Current Conductivity and Electron Spin Resonance of the Cd_1–xFe_xTe Alloys

P. Zhukovski, Ya. Partyka, P. Vengerek, T. Koltunovich, Yu. Sidorenko,
V. Stelmakh, and N. Lapchuk p. 526  abstract

Bistable Amphoteric Centers with Reverse Order of Electron Levels in Semiconductors

A. G. Nikitina and V. V. Zuev p. 531  abstract

Dislocation-Related Luminescence in Single-Crystal Silicon Subjected
to Silicon Ion Implantation and Subsequent Annealing

N. A. Sobolev, A. M. Emel’yanov, V. I. Sakharov, I. T. Serenkov,
E. I. Shek, and D. I. Tetel’baum p. 537  abstract

Specific Features of Electrical Properties of the In_xGa_1–xN Alloy

T. A. Komissarova, N. N. Matrosov, L. I. Ryabova, D. R. Khokhlov,
V. N. Jmerik, and S. V. Ivanov p. 540  abstract

Low-Temperature (77 K) Impurity Breakdown in p-Type 4H-SiC

I. V. Grekhov, P. A. Ivanov, A. S. Potapov, and T. P. Samsonova p. 542  abstract

Quasi-local States of Sn in Bi₂Te₃ According to the Studies
of Galvanomagnetic Effects in Classical and Quantizing Magnetic Fields

R. Laiho, S. A. Nemov, A. V. Lashkul, E. Lähderanta,
T. E. Svechnikova, and D. S. Dvornik p. 546  abstract

Semiconductor Structures, Interfaces, and Surfaces

The Effect of Neutron Radiation on the Photoelectric Parameters of ITO–GaSe Structures

Z. D. Kovalyuk, P. G. Litovchenko, O. A. Politanska, O. N. Sydor, V. N. Katerynchuk,
V. F. Lastovetsky, O. P. Litovchenko, V. K. Dubovoy, and L. A. Polivtsev p. 550  abstract

X-ray Photoelectron Spectroscopy of Gallium Nitride Films Grown
by Radical-Beam Gettering Epitaxy

I. V. Rogozin and M. B. Kotlyarevsky p. 555  abstract

Study of Initial Stages of Pb Growth on the Si (7710) Surface by the Method
of Scanning Tunneling Spectroscopy

R. A. Zhachuk, S. A. Teys, and B. Z. Olshanetsky p. 560  abstract

White Electroluminescence from ZnO/GaN Structures

I. E. Titkov, A. S. Zubrilov, L. A. Delimova, D. V. Mashovets,
I. A. Linichuk, and I. V. Grekhov p. 564  abstract

Anomalous Electron Spin Splitting in InAs Pumped by Injection

Ya. V. Terent’ev, O. G. Lyublinskaya, A. A. Toropov, V. A. Solov’ev,
S. V. Sorokin, A. A. Usikova, and S. V. Ivanov p. 570  abstract

Low-Dimensional Systems

Nonequilibrium Population of Charge Carriers in Structures with InGaN Deep Quantum Dots

D. S. Sizov, E. E. Zavarin, N. N. Ledentsov, V. V. Lundin, Yu. G. Musikhin^†, V. S. Sizov,
R. A. Suris, and A. F. Tsatsul’nikov p. 575  abstract

Low-Temperature Recrystallization of Ge Nanolayers on ZnSe

S. P. Suprun and E. V. Fedosenko p. 590  abstract

Modulation of Intersubband Absorption in Tunnel-Coupled Quantum Wells in Electric Fields

V. L. Zerova, L. E. Vorob’ev, D. A. Firsov, and E. Towe p. 596  abstract

Physics of Semiconductor Devices

Injection Lasers with a Broad Emission Spectrum on the Basis
of Self-Assembled Quantum Dots

A. E. Zhukov, A. R. Kovsh, E. V. Nikitina, V. M. Ustinov, and Zh. I. Alferov p. 606  abstract

Charge Transport in Detectors on the Basis
of Gallium Arsenide Compensated with Chromium

G. I. Azenshtat, M. A. Lelekov, V. A. Novikov, L. S. Okaevich, and O. P. Tolbanov p. 612  abstract

Silicon LEDs with Room-Temperature Dislocation-related Luminescence, Fabricated
by Erbium Ion Implantation and Chemical-Vapor Deposition
of Polycrystalline Silicon Layers Heavily Doped with Boron and Phosphorus

N. A. Sobolev, A. M. Emel’yanov, V. V. Zabrodski, N. V. Zabrodskaya,
V. L. Sukhanov, and E. I. Shek p. 616  abstract

Information for Authors p. 619

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