Contents
Semiconductors

Vol. 39, No. 5, 2005

Simultaneous English language translation of the journal is available from Pleiades Publishing, Inc.
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Electronic and Optical Properties of Semiconductors

The Effect of Oxygen on the ZnS Electronic Energy-Band Structure

N. K. Morozova, I. A. Karetnikov, K. V. Golub, N. D. Danilevich, V. M. Lisitsyn, and V. I. Oleshko p. 485  abstract

Magnetic Ordering Effects in Heavily Doped GaAs:Fe Crystals

B. P. Popov, V. K. Sobolevski, E. G. Apushkinski, and V. P. Savel’ev p. 493  abstract

The Electrical and Optical Properties of InP Irradiated with High Integrated Fluxes of Neutrons

V. N. Brudny, N. G. Kolin, D. I. Merkurisov, and V. A. Novikov p. 499  abstract

The Conductivity and Hall Effect in CdF₂:In and CdF₂:Y

I. I. Sadashev, E. Yu. Perlin, A. I. Ryskin, and A. S. Shcheulin p. 506  abstract

The Conductivity Tensor and Frequency of Electron Momentum Relaxation in the Case
of Scattering by Ionized Impurities in a Magnetic Field: The Density Matrix Method

V. E. Kaminskii p. 514  abstract

The Extrinsic Photoconductivity of Chalcogens in Ge_1–xSi_x Solid Solutions

N. B. Radchuk and A. Yu. Ushakov p. 521  abstract

Semiconductor Structures, Interfaces, and Surfaces

Specific Features of Epitaxial-Film Formation on Porous III–V Substrates

A. A. Sitnikova, A. V. Bobyl, S. G. Konnikov, and V. P. Ulin p. 523  abstract

p⁺-Si–n-CdF₂ Heterojunctions

N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko, A. I. Ryskin, and A. S. Shcheulin p. 528  abstract

Injection Currents in Narrow-Gap (Pb_1–xSn_xTe):In Insulators

A. N. Akimov, V. G. Erkov, A. E. Klimov, E. L. Molodtsova, S. P. Suprun, and V. N. Shumsky p. 533  abstract

The Generation–Recombination Mechanism of Charge Transport
in a Thin-Film CdS/CdTe Heterojunction

L. A. Kosyachenko, X. Mathew, V. V. Motushchuk, and V. M. Sclyarchuk p. 539  abstract

Low-Dimensional Systems

The Resonant Tunneling of Holes through Double-Barrier Structures with InAs QDs
at the Center of a GaAs Quantum Well

E. N. Morozova, O. N. Makarovski, V. A. Volkov, Yu. V. Dubrovski, L. Turyanska,
E. E. Vdovin, A. Patané, L. Eaves, and M. Henini p. 543  abstract

Threshold Behavior of the Formation of Nanometer Islands in a Ge/Si(100) System
in the Presence of Sb

G. E. Cirlin, V. G. Dubrovski, A. A. Tonkikh, N. V. Sibirev, V. M. Ustinov, and P. Werner p. 547  abstract

The Formation of Silicon Nanocrystals in SiO₂ Layers by the Implantation of Si Ions
with Intermediate Heat Treatments

G. A. Kachurin, V. A. Volodin, D. I. Tetel’baum, D. V. Marin, A. F. Leer,
A. K. Gutakovski, A. G. Cherkov, and A. N. Mikhalov p. 552  abstract

The Diffusion Mechanism in the Formation of GaAs and AlGaAs Nanowhiskers during the Process
of Molecular-Beam Epitaxy

G. E. Cirlin, V. G. Dubrovski, N. V. Sibirev, I. P. Soshnikov, Yu. B. Samsonenko,
A. A. Tonkikh, and V. M. Ustinov p. 557  abstract

Amorphous, Vitreous, and Porous Semiconductors

The Electronic and Emissive Properties of Au-Doped Porous Silicon

V. E. Primachenko, Ja. F. Kononets, B. M. Bulakh, E. F. Venger, É. B. Kaganovich, I. M. Kizyak,
S. I. Kirillova, É. G. Manolov, and Yu. A. Tsyrkunov p. 565  abstract

The Influence of Vacuum Annealing Temperature on the Fundamental Absorption Edge
and Structural Relaxation of a-SiC:H Films

A. V. Vasin, A. V. Rusavsky, V. S. Lysenko, A. N. Nazarov, V. I. Kushnirenko,
S. P. Starik, and V. G. Stepanov p. 572  abstract

Simulation of the Electrical Properties of Polycrystalline Ceramic Semiconductors
with Submicrometer Grain Sizes

I. V. Rozhanski and D. A. Zakheim p. 577  abstract

Features of the Vibrational Spectra of Diamond-like and Polymer-like a-C:H Films

E. A. Konshina and A. I. Vangonen p. 585  abstract

Physics of Semiconductor Devices

Electric Fatigue in MOS Structures due to Lowering of the Potential Barrier during
the Field Ionization of Insulator Atoms

I. S. Savinov p. 591  abstract

Tunnel-Recombination Currents and Electroluminescence Efficiency in InGaN/GaN LEDs

N. I. Bochkareva, E. A. Zhirnov, A. A. Efremov, Yu. T. Rebane, R. I. Gorbunov, and Yu. G. Shreter p. 594  abstract

Effect of Uniaxial Compression on the Photoconversion Parameters in a p-GaSe–n-InSe Optical Contact

S. I. Drapak, M. O. Vorobets, and Z. D. Kovalyuk p. 600  abstract

The Influence of Gain Saturation on the Output Power of Quantum-Well Semiconductor Lasers

G. G. Zegrya and I. Yu. Solov’ev p. 603  abstract

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