Contents
Semiconductors

Vol. 37, No. 5, 2003

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Review

Artificial GeSi Substrates for Heteroepitaxy: Achievements and Problems

Yu. B. Bolkhovityanov, O. P. Pchelyakov, L. V. Sokolov, and S. I. Chikichev p. 493  abstract

Atomic Structure and Nonelectronic Properties of Semiconductors

Propagation of Nonequilibrium Phonons in Single-Crystal ZnTe

T. I. Galkina, A. Yu. Klokov, A. I. Sharkov,
Yu. V. Korostelin, and V. V. Zatsev p. 519  abstract

Electronic and Optical Properties of Semiconductors

Magnetooptical Oscillations in Bismuth at T 77 K

O. V. Kondakov and K. G. Ivanov p. 523  abstract

A Local Specific Feature of Variation in the Spectrum
of Picosecond Superluminescence upon Adding Excited Carriers
to a Non-Fermi Electron–Hole Plasma in GaAs

N. N. Ageeva, I. L. Bronevoi, A. N. Krivonosov,
S. E. Kumekov, and S. V. Stegantsov p. 526  abstract

Phonon-Assisted Exciton Luminescence in GaN Layers Grown
by MBE and Chloride-Hydride VPE

M. G. Tkachman, T. V. Shubina, V. N. Jmerik, S. V. Ivanov,
P. S. Kop’ev, T. Paskova, and B. Monemar p. 532  abstract

Electronic Properties of Irradiated Semiconductors.
A Model of the Fermi Level Pinning

V. N. Brudnyi, S. N. Grinyaev, and N. G. Kolin p. 537  abstract

Relaxation of a Defect Subsystem in Silicon Irradiated
with High-Energy Heavy Ions

S. A. Smagulova, I. V. Antonova, E. P. Neustroev, and V. A. Skuratov p. 546  abstract

Diffusion of Europium in Silicon

D. É. Nazyrov p. 551  abstract

Semiconductor Structures, Interfaces, and Surfaces

Photosensitive Structures Based on CdGa₂Se₄ Single Crystals

A. A. Vapolin, Yu. A. Nikolaev, I. K. Polushina, V. Yu. Rud’,
Yu. V. Rud’, E. I. Terukov, and N. Fernelius p. 553  abstract

Low-Dimensional Systems

Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix

D. S. Sizov, Yu. B. Samsonenko, G. E. Tsyrlin, N. K. Polyakov,
V. A. Egorov, A. A. Tonkikh, A. E. Zhukov, S. S. Mikhrin,
A. P. Vasil’ev, Yu. G. Musikhin, A. F. Tsatsul’nikov,
V. M. Ustinov, and N. N. Ledentsov p. 559  abstract

Model of Multi-Island Single-Electron Arrays Based
on the Monte Carlo Method

I. I. Abramov, S. A. Ignatenko, and E. G. Novik p. 564  abstract

Dispersion of the Relaxation Time of Quasi-Two-Dimensional Electrons
under Conditions of Ionized-Impurity Scattering in a Superlattice
with Doped Quantum Wells

S. I. Borisenko p. 569  abstract

Electronic and Optical Properties of AlAs/Al_xGa_1–xAs(110) Superlattices

G. F. Karavaev, V. N. Chernyshov, and R. M. Egunov p. 573  abstract

Photoluminescence Study of AlGaAs/GaAs/AlGaAs Double Quantum Wells
Separated by a Thin AlAs Layer

G. B. Galiev, M.V. Karachevtseva, V. G. Mokerov, V. A. Strakhov,
G. N. Shkerdin, and N. G. Yaremenko p. 581  abstract

Electron Heating by a Strong Longitudinal Electric Field in Quantum Wells

L. E. Vorob’ev, S. N. Danilov, V. L. Zerova, and D. A. Firsov p. 586  abstract

Amorphous, Vitreous, and Porous Semiconductors

Semi-Insulating Silicon Carbide Layers Obtained by Diffusion
of Vanadium into Porous 4H-SiC

M. G. Mynbaeva, A. A. Lavrent’ev, N. I. Kuznetsov,
A. N. Kuznetsov, K. D. Mynbaev, and A. A. Lebedev p. 594  abstract

Quantum-Chemical Simulation of the Influence of Defects
on the Infrared Spectrum and the Electronic Structure of a-Se

A. S. Zyubin, F. V. Grigor’ev^, , and S. A. Dembovski p. 598  abstract

Phase Transformations Initiated in Thin Layers of Amorphous Silicon
by Nanosecond Excimer Laser Pulses

G. D. Ivlev and E. I. Gatskevich p. 604  abstract

Physics of Semiconductor Devices

Detection of Hydrogen Impurity in Silicon Radiation Detectors

L. F. Makarenko, F. P. Korshunov, S. B. Lastovski, and N. I. Zamyatin p. 611  abstract

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