Contents
Semiconductors
Vol. 37, No. 5, 2003
Simultaneous English language translation of the journal is available from MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.
Review
Artificial GeSi Substrates for Heteroepitaxy: Achievements and Problems
Yu. B. Bolkhovityanov, O. P. Pchelyakov, L. V. Sokolov, and S. I. Chikichev p. 493 abstract
Atomic Structure and Nonelectronic Properties of Semiconductors
Propagation of Nonequilibrium Phonons in Single-Crystal ZnTe
T. I. Galkina, A. Yu. Klokov, A. I. Sharkov,
Yu. V. Korostelin, and V. V. Zatsev p. 519 abstract
Electronic and Optical Properties of Semiconductors
Magnetooptical Oscillations in Bismuth at T 77 K
O. V. Kondakov and K. G. Ivanov p. 523 abstract
A Local Specific Feature of Variation in the Spectrum
of Picosecond Superluminescence upon Adding Excited Carriers
to a Non-Fermi ElectronHole Plasma in GaAs
N. N. Ageeva, I. L. Bronevoi, A. N. Krivonosov,
S. E. Kumekov, and S. V. Stegantsov p. 526 abstract
Phonon-Assisted Exciton Luminescence in GaN Layers Grown
by MBE and Chloride-Hydride VPE
M. G. Tkachman, T. V. Shubina, V. N. Jmerik, S. V. Ivanov,
P. S. Kopev, T. Paskova, and B. Monemar p. 532 abstract
Electronic Properties of Irradiated Semiconductors.
A Model of the Fermi Level Pinning
V. N. Brudnyi, S. N. Grinyaev, and N. G. Kolin p. 537 abstract
Relaxation of a Defect Subsystem in Silicon Irradiated
with High-Energy Heavy Ions
S. A. Smagulova, I. V. Antonova, E. P. Neustroev, and V. A. Skuratov p. 546 abstract
Diffusion of Europium in Silicon
D. É. Nazyrov p. 551 abstract
Semiconductor Structures, Interfaces, and Surfaces
Photosensitive Structures Based on CdGa2Se4 Single Crystals
A. A. Vapolin, Yu. A. Nikolaev, I. K. Polushina, V. Yu. Rud,
Yu. V. Rud, E. I. Terukov, and N. Fernelius p. 553 abstract
Low-Dimensional Systems
Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix
D. S. Sizov, Yu. B. Samsonenko, G. E. Tsyrlin, N. K. Polyakov,
V. A. Egorov, A. A. Tonkikh, A. E. Zhukov, S. S. Mikhrin,
A. P. Vasilev, Yu. G. Musikhin, A. F. Tsatsulnikov,
V. M. Ustinov, and N. N. Ledentsov p. 559 abstract
Model of Multi-Island Single-Electron Arrays Based
on the Monte Carlo Method
I. I. Abramov, S. A. Ignatenko, and E. G. Novik p. 564 abstract
Dispersion of the Relaxation Time of Quasi-Two-Dimensional Electrons
under Conditions of Ionized-Impurity Scattering in a Superlattice
with Doped Quantum Wells
S. I. Borisenko p. 569 abstract
Electronic and Optical Properties of AlAs/AlxGa1xAs(110) Superlattices
G. F. Karavaev, V. N. Chernyshov, and R. M. Egunov p. 573 abstract
Photoluminescence Study of AlGaAs/GaAs/AlGaAs Double Quantum Wells
Separated by a Thin AlAs Layer
G. B. Galiev, M.V. Karachevtseva, V. G. Mokerov, V. A. Strakhov,
G. N. Shkerdin, and N. G. Yaremenko p. 581 abstract
Electron Heating by a Strong Longitudinal Electric Field in Quantum Wells
L. E. Vorobev, S. N. Danilov, V. L. Zerova, and D. A. Firsov p. 586 abstract
Amorphous, Vitreous, and Porous Semiconductors
Semi-Insulating Silicon Carbide Layers Obtained by Diffusion
of Vanadium into Porous 4H-SiC
M. G. Mynbaeva, A. A. Lavrentev, N. I. Kuznetsov,
A. N. Kuznetsov, K. D. Mynbaev, and A. A. Lebedev p. 594 abstract
Quantum-Chemical Simulation of the Influence of Defects
on the Infrared Spectrum and the Electronic Structure of a-Se
A. S. Zyubin, F. V. Grigorev, , and S. A. Dembovskip. 598 abstract
Phase Transformations Initiated in Thin Layers of Amorphous Silicon
by Nanosecond Excimer Laser Pulses
G. D. Ivlev and E. I. Gatskevich p. 604 abstract
Physics of Semiconductor Devices
Detection of Hydrogen Impurity in Silicon Radiation Detectors
L. F. Makarenko, F. P. Korshunov, S. B. Lastovski, and N. I. Zamyatin p. 611 abstract
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