Contents
Semiconductors
Vol. 36, No. 5, 2002
Simultaneous English language translation of the journal is available from MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.
Electronic and Optical Properties of Semiconductors
Nonlinear Photoluminescence of Graded-Gap AlxGa1xAs Solid Solutions
V. F. Kovalenko, A. Yu. Mironchenko, and S. V. Shutov p. 481 abstract
Features of Determination of Shallow-Level Impurity Concentrations
in Semiconductors from Analysis of the Exciton Luminescence Spectrum
K. D. Glinchuk and A. V. Prokhorovich p. 487 abstract
Deep Level Spectra of MBE-Grown ZnTe:Cr2+ Layers
Yu. G. Sadofyev and M. V. Korshkov p. 493 abstract
Band Structure of Mg2Si and Mg2Ge Semiconducting Compounds
with a Strained Crystal Lattice
A. V. Krivosheeva, A. N. Kholod, V. L. Shaposhnikov,
A. E. Krivosheev, and V. E. Borisenko p. 496 abstract
Localized States in Hg3In2Te6Cr Compounds
P. N. Gorle, O. G. Grushka, and V. M. Frasunyak p. 501 abstract
Semiconductor Structures, Interfaces, and Surfaces
Control of Charge Transport Mode in the Schottky Barrier by -Doping:
Calculation and Experiment for Al/GaAs
V. I. Shashkin, A. V. Murel, V. M. Daniltsev, and O. I. Khrykin p. 505 abstract
Low-Dimensional Systems
Electrons, Holes, and Excitons in a Superlattice Composed
of Cylindrical Quantum Dots with Extremely Weak Coupling
between Quasiparticles in Neighboring Layers of Quantum Dots
N. V. Tkach, A. M. Makhanets, and G. G. Zegrya p. 511 abstract
Evaluation of Mobility Gaps and Density of Localized Hole States
in p-Ge/Ge1xSix Heterostructures in the Quantum Hall Effect Mode
Yu. G. Arapov, O. A. Kuznetsov, V. N. Neverov, G. I. Kharus,
N. G. Shelushinina, and M. V. Yakunin p. 519 abstract
Miniband Spectra of (AlAs)M(GaAs)N(111) Superlattices
G. F. Karavaev, V. N. Chernyshov, and R. M. Egunov p. 527 abstract
Room Temperature = 1.3
m Photoluminescence from InGaAs Quantum Dots
on (001) Si Substrate
T. M. Burbaev, I. P. Kazakov, V. A. Kurbatov, M. M. Rzaev,
V. A. Tsvetkov, and V. I. Tsekhosh p. 535 abstract
Resonance Tunneling and Nonlinear Current in Heterobarriers
with Complex Law of Carrier Dispersion
C. S. Kim, A. M. Satanin, and V. B. Shtenberg p. 539 abstract
Multichannel Carrier Scattering at Quantum-Well Heterostructures
V. I. Galiev, A. N. Kruglov, A. F. Polupanov, E. M. Goldys, and T. L. Tansley p. 546 abstract
Effect of Hydrogen on the Properties of Pd/GaAs/InGaAs Diode Structures
with Quantum Wells
I. A. Karpovich, S. V. Tikhov, E. L. Shobolov, and B. N. Zvonkov p. 552 abstract
Amorphous, Vitreous, and Porous Semiconductors
The Interrelation of Surface Relief of Porous Silicon with Specific Features of Raman Spectra
B. M. Bulakh, B. R. Jumayev, N. O. Korsunska, O. S. Litvin,
T. V. Torchynska, L. Yu. Khomenkova, and V. O. Yukhymchuk p. 558 abstract
Formation of Macropore Nucleation Centers in Silicon by Ion Implantation
E. V. Astrova and T. N. Vasunkina p. 564 abstract
X-Ray-Emission Study of the Structure of Si:H Layers Formed
by Low-Energy Hydrogen-Ion Implantation
V. R. Galakhov, I. V. Antonova, S. N. Shamin, V. I. Aksenova,
V. I. Obodnikov, A. K. Gutakovski, and V. P. Popov p. 568 abstract
Preparation and Study of Carbidized Porous Silicon
O. M. Sreseli, D. N. Goryachev, V. Yu. Osipov, L. V. Belyakov,
S. P. Vul, I. T. Serenkov, V. I. Sakharov, and A. Ya. Vul p. 574 abstract
Physics of Semiconductor Devices
Shallow pn Junctions Formed in Silicon Using Pulsed Photon Annealing
S. T.i
ianu, T. S.
i
ianu, and S. K. Railean p. 581 abstract
Simulation of Avalanche Multiplication of Electrons in Photodetectors
with Blocked Hopping Conduction
S. P. Sinitsa p. 588 abstract
Spectral Line Width of the Current-Tunable Lasers on the Base
of InAsSb/InAsSbP at Low Temperature
A. N. Imenkov, N. M. Kolchanova, P. Kubat, S. Tsivish, and Yu. P. Yakovlev p. 592 abstract
Generation of Microwave Oscillations in a No-Base Diode
S. A. Darznek, S. K. Lyubutin, S. N. Rukin, and B. G. Slovikovskip. 599 abstract
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