Contents
Semiconductors


Vol. 36, No. 5, 2002

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.


Electronic and Optical Properties of Semiconductors

Nonlinear Photoluminescence of Graded-Gap AlxGa1–xAs Solid Solutions

V. F. Kovalenko, A. Yu. Mironchenko, and S. V. Shutov p. 481  abstract

Features of Determination of Shallow-Level Impurity Concentrations
in Semiconductors from Analysis of the Exciton Luminescence Spectrum

K. D. Glinchuk and A. V. Prokhorovich p. 487  abstract

Deep Level Spectra of MBE-Grown ZnTe:Cr2+ Layers

Yu. G. Sadofyev and M. V. Korshkov p. 493  abstract

Band Structure of Mg2Si and Mg2Ge Semiconducting Compounds
with a Strained Crystal Lattice

A. V. Krivosheeva, A. N. Kholod, V. L. Shaposhnikov,
A. E. Krivosheev, and V. E. Borisenko
p. 496  abstract

Localized States in Hg3In2Te6Cr Compounds

P. N. Gorleframe0, O. G. Grushka, and V. M. Frasunyak p. 501  abstract


Semiconductor Structures, Interfaces, and Surfaces

Control of Charge Transport Mode in the Schottky Barrier by -Doping:
Calculation and Experiment for Al/GaAs

V. I. Shashkin, A. V. Murel, V. M. Daniltsev, and O. I. Khrykin p. 505  abstract


Low-Dimensional Systems

Electrons, Holes, and Excitons in a Superlattice Composed
of Cylindrical Quantum Dots with Extremely Weak Coupling
between Quasiparticles in Neighboring Layers of Quantum Dots

N. V. Tkach, A. M. Makhanets, and G. G. Zegrya p. 511  abstract

Evaluation of Mobility Gaps and Density of Localized Hole States
in p-Ge/Ge1–xSix Heterostructures in the Quantum Hall Effect Mode

Yu. G. Arapov, O. A. Kuznetsov, V. N. Neverov, G. I. Kharus,
N. G. Shelushinina, and M. V. Yakunin
p. 519  abstract

Miniband Spectra of (AlAs)M(GaAs)N(111) Superlattices

G. F. Karavaev, V. N. Chernyshov, and R. M. Egunov p. 527  abstract

Room Temperature = 1.3 m Photoluminescence from InGaAs Quantum Dots
on (001) Si Substrate

T. M. Burbaev, I. P. Kazakov, V. A. Kurbatov, M. M. Rzaev,
V. A. Tsvetkov, and V. I. Tsekhosh
p. 535  abstract

Resonance Tunneling and Nonlinear Current in Heterobarriers
with Complex Law of Carrier Dispersion

C. S. Kim, A. M. Satanin, and V. B. Shtenberg p. 539  abstract

Multichannel Carrier Scattering at Quantum-Well Heterostructures

V. I. Galiev, A. N. Kruglov, A. F. Polupanov, E. M. Goldys, and T. L. Tansley p. 546  abstract

Effect of Hydrogen on the Properties of Pd/GaAs/InGaAs Diode Structures
with Quantum Wells

I. A. Karpovich, S. V. Tikhov, E. L. Shobolov, and B. N. Zvonkov p. 552  abstract


Amorphous, Vitreous, and Porous Semiconductors

The Interrelation of Surface Relief of Porous Silicon with Specific Features of Raman Spectra

B. M. Bulakh, B. R. Jumayev, N. O. Korsunska, O. S. Litvin,
T. V. Torchynska, L. Yu. Khomenkova, and V. O. Yukhymchuk
p. 558  abstract

Formation of Macropore Nucleation Centers in Silicon by Ion Implantation

E. V. Astrova and T. N. Vasunkina p. 564  abstract

X-Ray-Emission Study of the Structure of Si:H Layers Formed
by Low-Energy Hydrogen-Ion Implantation

V. R. Galakhov, I. V. Antonova, S. N. Shamin, V. I. Aksenova,
V. I. Obodnikov, A. K. Gutakovskiframe1, and V. P. Popov
p. 568  abstract

Preparation and Study of Carbidized Porous Silicon

O. M. Sreseli, D. N. Goryachev, V. Yu. Osipov, L. V. Belyakov,
S. P. Vul’, I. T. Serenkov, V. I. Sakharov, and A. Ya. Vul’
p. 574  abstract


Physics of Semiconductor Devices

Shallow pn Junctions Formed in Silicon Using Pulsed Photon Annealing

S. T. frame2iframe3ianu, T. S. frame4iframe5ianu, and S. K. Railean p. 581  abstract

Simulation of Avalanche Multiplication of Electrons in Photodetectors
with Blocked Hopping Conduction

S. P. Sinitsa p. 588  abstract

Spectral Line Width of the Current-Tunable Lasers on the Base
of InAsSb/InAsSbP at Low Temperature

A. N. Imenkov, N. M. Kolchanova, P. Kubat, S. Tsivish, and Yu. P. Yakovlev p. 592  abstract

Generation of Microwave Oscillations in a No-Base Diode

S. A. Darznek, S. K. Lyubutin, S. N. Rukin, and B. G. Slovikovskiframe6 p. 599  abstract


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