Contents

Semiconductors

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Vol. 60, No. 5, 2026

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Investigating the Effect of AlGaN Back Barrier in Buffer Free AlGaN/GaN HEMTs with Stacked HfO₂/SiN Passivation for High Frequency Applications

Anil Prasad Dadi, Ellapu Bhanu Prakash, Vijay Maitra, Tathagata Ghose, Ashok Ray, and Sushanta Bordoloi p. 469  abstract

Design and Performance Investigation of a Dual p-GaN Recessed Gate High Electron Mobility Transistors for High Threshold Voltage Applications

H. Bhattacharjee, J. Chowdhury, A. Dey, and Preetisudha Meher p. 483  abstract

Influence of Defects on the Electrical Performance of InAlAs/InGaAs Schottky Barrier Diodes

S. X. Sun, Z. M. Zhai, L. H. Chen, H. Y. Mei, and J. Ajayan p. 504  abstract

Rashba Effect of Strong-Coupling Bound Polaron in a Triangular Quantum Well

Xiong-Liang p. 511  abstract

Hydrogenic Impurity Effect of the Strong-coupling Polaron in Perovskite Parabolic Potential Quantum Wells

Hong-Xia Zhang, Yi-Min Zhang, Xin-Jun Ma, and Yong Sun p. 520  abstract

Optimization of Low-Cost Zinc Sulfide Antireflection Coating by Eco-Friendly Route for Large Area Multi-Crystalline Silicon Solar Cells

M. Chakraborty, Sukhendu Jana, Kunal Chowdhury, Sayan Das, and Utpal Gangopadhyay p. 527  abstract

Simulation Study of Enhancement-Mode HEMTs with Graded AlGaN Barriers and GaN/InGaN Double Quantum Well Caps

Xiang-Yu Liu, Li-E Cai, Yi-Fei Chen, Zhi-Yu Ma, Da Feng, Hai-Feng Lin, Chuan-Tao Sun, Cheng Zai-Jun, Lin Hai-Feng, and Rong-Sheng Zheng p. 540  abstract

Optimizing the ABX₃ Perovskite/Transport Layer Interface in the Perovskite Solar Cell: Interfacial Layer Selection for Tripartite Heterostructures through Defect Passivation

Bhuvaneswari Thiyagarajan and Kathirvelu Murugan p. 555  abstract

First-Principles Investigation of Semiconducting d⁰ Heusler Alloys Li₂BaZ (Z = C, Ge, and Si) for Optoelectronic Applications

Djilali Amari, Salah Eddine Rouag, Mohamed Mokhtari, Fethallah Dahmane, Habib Rached, and Khalil Belakhdar p. 569  abstract

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