Vol. 55, No. 5, 2021

Semiconductors

Formation of Acceptor Centers in CdHgTe as a Result of Water and Heat Treatments

G. Yu. Sidorov, Yu. G. Sidorov, V. A. Shwets and V. S. Varavin p. 461 abstract

Intracenter Radiative Transitions in Iron Impurity Centers in Zinc Selenide

V. V. Ushakov, D. F. Aminev and V. S. Krivobok p. 466 abstract

Single-Electron Emission–Injection Transport in a Microstructure with Colloidal Quantum Dots of Narrow-Gap Semiconductors

N. D. Zhukov, M. V. Gavrikov, V. F. Kabanov and I. T. Yagudin p. 470 abstract

Effect of Carrier Heating by Intrinsic Stimulated Picosecond Emission in GaAs on a Linear Increase at the Front and the Duration of the Spectral Component of This Emission

N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev and A. N. Krivonosov p. 476 abstract

Synthesis and Characterization of Ni-Doped ZnO Thin Films Prepared by Sol–Gel Spin-Coating Method

M. Ayachi, F. Ayad, A. Djelloul, L. Benharrat and S. Anas p. 482 abstract

Theoretical Study of the Structural and Electronic Properties of the Tetragonal Chalcopyrite Compound ZnTiS₂

M. El Amine Monir p. 491 abstract

Thermoelectric Properties of Solid Solutions with Cation and Anion Substitution on the Basis of the Layered Tetradimite-like Compound GeSnSb₄Te₈

G. R. Gurbanov, T. A. Jafarov and M. B. Adygezalova p. 499 abstract

Bulk Fin-FET Strategy at Distinct Nanometer Regime for Measurement of Short-Channel Effects

S. M. Jagtap and Dr. V. J. Gond p. 504 abstract

Features of the Luminescence Spectra of ZnSe ⋅ O Crystals in Band Anticrossing Theory

V. I. Oleshko, S. S. Vilchinskaya and N. K. Morozova p. 511 abstract

Analysis of the Threshold Conditions and Lasing Efficiency of Internally Circulating Modes in Large Rectangular Cavities Based on AlGaAs/GaAs/InGaAs Laser Heterostructures

A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko and N. A. Pikhtin p. 518 abstract

Contents

Semiconductors