Contents

Semiconductors

Vol. 54, No. 5, 2020

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Photoluminescence of (Zn, Pb, Mn)S Quantum Dots in Polyacrylate Matrix

A. A. Isaeva and V. P. Smagin p. 511  abstract

Prediction of the Magnitude of the Trapped Charge in the Buried Oxide of Silicon-on-Insulator Structures Using the Poole–Frenkel Effect

A. A. Shiryaev, V. M. Vorotyntsev and E. L. Shobolov p. 518  abstract

Low-Dimensional Silicon-Carbide Structures: Analytical Estimates of Electron-Spectrum Characteristics

S. Yu. Davydov p. 523  abstract

Carrier-Transport Processes in n+-GaAs/n0-GaAs/n+-GaAs Isotype Heterostructures with a Thin Wide-Gap AlGaAs Barrier

S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, V. S. Yuferev, V. S. Golovin, P. S. Gavrina, D. N. Romanovich, I. V. Miroshnikov and N. A. Pikhtin p. 529  abstract

Effect of Annealing on the Dark and Illuminated I(V ) Characterization of a ZnO:Ga|Cu2O Hetero-Junction Prepared by Ultrasonic Spray System

H. Trir, L. Radjehi, N. Sengouga, T. Tibermacine, L. Arab, W. Filali, D. Abdelkader and N. Attaf p. 534  abstract

Interfacial Characterization and Transport Conduction Mechanisms in Al|HfO2|p-Ge Structures: Energy Band Diagram

M. A. Botzakaki, G. Skoulatakis, G. P. Papageorgiou and C. A. Krontiras p. 543  abstract

Effects of 1-MeV Electron Irradiation on the Photoluminescence of GaInNAs|GaAs Single Quantum Well Structure

M. Sailai, A. Aierken, L. Qiqi, M. Heini, X. Zhao, J. Mo, Guo Jie, R. Hao, Z. Yu and G. Qi p. 554  abstract

Amorphous, Vitreous, and Organic Semiconductors

Polarization Processes in Thin Layers of Amorphous MoS2 Obtained by RF Magnetron Sputtering

A. A. Kononov, R. A. Castro-Arata, D. D. Glavnaya, V. M. Stozharov, D. M. Dolginsev, Y. Saito, P. Fons, N. I. Anisimova and A. V. Kolobov p. 558  abstract

Physics of Semiconductor Devices

Effect of Uniaxial Elastic Deformation on the Current–Voltage Characteristic of Surface-Barrier Sb–p-Si〈Mn〉–Au Diodes

O. O. Mamatkarimov, O. Khimmatkulov and I. G. Tursunov p. 563  abstract

S-Shaped I–V Characteristics of High-Power Schottky Diodes at High Current Densities

A. G. Tandoev, T. T. Mnatsakanov and S. N. Yurkov p. 567  abstract

Modeling the Spatial Switch-On Dynamics of a Laser Thyristor (λ = 905 nm) Based on an AlGaAs/InGaAs/GaAs Multi-Junction Heterostructure

O. S. Soboleva, V. S. Golovin, V. S. Yuferev, P. S. Gavrina, N. A. Pikhtin, S. O. Slipchenko and A. A. Podoskin p. 575  abstract

Switching Control Model of Closed-Mode Structures in Large Rectangular Cavities Based on AlGaAs/InGaAs/GaAs Laser Heterostructures

A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko and N. A. Pikhtin p. 581  abstract

A Novel 4H-SiC Super Junction UMOSFET with Hetero-Junction Diode for Enhanced Reverse Recovery Characteristics and Low Switching Loss

J. Kim and K. Kim p. 587  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates

P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Lenshin, Yu. Yu. Khudyakov, A. M. Mizerov, S. N. Timoshnev, I. N. Arsentyev, A. N. Beltyukov, Harald Leiste and S. A. Kukushkin p. 596  abstract

Formation of Multilayer Structures with Integrated Membranes Based on Porous Silicon

V. V. Bolotov, K. E. Ivlev, E. V. Knyazev, I. V. Ponomareva and V. E. Roslikov p. 609  abstract