Contents
Semiconductors
Vol. 35, No. 5, 2001
Simultaneous
English language translation of the journal is available from
MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors
ISSN 1063-7826.
Atomic Structure and Nonelectronic Properties of Semiconductors
Oscillatory
Reactions Involving the Oxygen and Carbon Background
Impurities
in Silicon Undergoing Heat Treatment
V. V. Lukjanitsa p. 491 abstract
Electronic and Optical Properties of Semiconductors
Thermal
Conductivity and the WiedemannFranz Relation in Melts
of Indium and Gallium Antimonides
Ya. B. Magomedov and A. R. Bilalov p. 499 abstract
Specific Features of Photoconductivity in Thin n-PbTe:Ga Epilayers
B. A. Akimov, V. A. Bogoyavlenski
, L. I. Ryabova, and V. N. Vasilkov p. 502 abstract
Dynamic Effect of
a Constant Electric Field on the Kinetics of Photons Interacting
with Electrons in a Semiconductor
R. Kh. Amirov and V. N. Gusyatnikov p. 506 abstract
Studies of the Infrared Luminescence of ZnSe Doped with Copper and Oxygen
N. K. Morozova, I. A. Karetnikov, V. V. Blinov, and E. M. Gavrishchuk p. 512 abstract
On the Origin of
the Luminescence Band with hm
= 1.5133 eV in Gallium Arsenide
K. D. Glinchuk, N. M. Litovchenko, A. V. Prokhorovich, and O. N. Strilchuk p. 516 abstract
BeCdSe: A New
Material for the Active Region in Devices Operating
in the BlueGreen Region of the Spectrum
O. V. Nekrutkina, S. V. Sorokin, V. A. Ka
gorodov, A. A. Sitnikova, T. V. Shubina, A. A. Toropov,
S. V. Ivanov, P. S. Kopev, G. Reuscher, V. Wagner, J. Geurts, A. Waag, and G. Landwehr p. 520 abstract
Semiconductor Structures, Interfaces, and Surfaces
Method for
Determining the Stoichiometric Composition of a Mercury
Cadmium Telluride Solid Solution from CapacitanceVoltage
Characteristics
I. M. Ivankiv, A. M. Yafyasov, V. B. Bogevolnov, and A. D. Perepelkin p. 525 abstract
Mechanism of the Current Flow in Pd(Heavily Doped p-AlxGa1 xN) Ohmic Contact
T. V. Blank, Yu. A. Goldberg, E. V. Kalinina, O. V. Konstantinov, A. E. Nikolaev,
A. V. Fomin, and A. E. Cherenkov p. 529 abstract
Thermodynamic
Analysis of the Growth of GaAsN Ternary Compounds
by Molecular Beam Epitaxy
V. A. Odnoblyudov, A. R. Kovsh, A. E. Zhukov, N. A. Maleev, E. S. Semenova, and V. M. Ustinov p. 533 abstract
An Analysis of the
Charge-Transport Mechanisms Defining the Reverse
CurrentVoltage Characteristics of the MetalGaAs
Barriers
S. V. Bulyarski
and A. V. Zhukov p. 539 abstract
Low-Dimensional Systems
Photoelectric
Spectroscopy of InAs/GaAs Quantum Dot Heterostructures
in a Semiconductor/Electrolyte System
I. A. Karpovich, A. P. Gorshkov, S. B. Levichev, S. V. Morozov, B. N. Zvonkov, and D. O. Filatov p. 543 abstract
Manifestation of
the Upper Hubbard Band in the Electrical Conductivity
of Two-Dimensional p-GaAsAlGaAs Structures
N. V. Agrinskaya, Yu. L. Ivanov, V. M. Ustinov, and D. A. Poloskin p. 550 abstract
Superlattice Conductivity under the Action of a Nonlinear Electromagnetic Wave
D. V. Zavyalov and S. V. Kryuchkov p. 554 abstract
Nonlinear Interaction of Waves in a Semiconductor Superlattice
A. A. Bulgakov and O. V. Shramkova p. 557 abstract
The Distribution Function of Hot Charge Carriers under Conditions of Resonance Scattering
A. A. Prokofev, M. A. Odnoblyudov, and I. N. Yassievich p. 565 abstract
Electron Transport
in Silicon Carbide Natural Superlattices
under the WannierStark Quantization Conditions: Basic
Issues and Application Prospects
V. I. Sankin and P. P. Shkrebi
p. 573 abstract
Amorphous, Vitreous, and Porous Semiconductors
Silicon Network in a-Si:H Films Containing Ordered Inclusions
O. A. Golikova, E. V. Bogdanova, M. M. Kazanin, A. N. Kuznetsov, V. A. Terekhov,
V. M. Kashkarov, and O. V. Ostapenko p. 579 abstract
Excitation of Luminescence in Porous Silicon with Adsorbed Ozone Molecules
S. N. Kuznetsov, V. B. Pikulev, A. A. Saren, Yu. E. Gardin, and V. A. Gurtov p. 583 abstract
Drift Mobility of Carriers in Porous Silicon
N. S. Averkiev, L. P. Kazakova, É. A. Lebedev, and N. N. Smirnova p. 588 abstract
The Effect of Bombardment with Carbon Ions on the Nanostructure of Diamond-like Films
I. A. Fa
zrakhmanov, V. V. Bazarov, V. A. Zhikharev, and I. B. Kha
bullin p. 591 abstract
Physics of Semiconductor Devices
Light Emitting
Diodes for the Spectral Range =
3.34.3
m Fabricated
from InGaAs and InAsSbP Solid Solutions: Electroluminescence
in the Temperature Range of 20180°C (Part 2)
M. A
daraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remenny
,
N. M. Stus, and G. N. Talalakin p. 598 abstract
A New Structure of the CdS-Based Surface-Barrier Ultraviolet Sensor
S. Yu. Pavelets, Yu. N. Bobrenko, A. V. Komashchenko, and T. E. Shengeliya p. 605 abstract
Impact Ionization Wave Breakdown of Drift Step Recovery Diodes
V. A. Kozlov, A. F. Kardo-Sysoev, and V. I. Brylevski
p. 608 abstract
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