Contents
Semiconductors

Vol. 35, No. 5, 2001

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Oscillatory “Reactions” Involving the Oxygen and Carbon Background Impurities
in Silicon Undergoing Heat Treatment

V. V. Lukjanitsa p. 491  abstract

Electronic and Optical Properties of Semiconductors

Thermal Conductivity and the Wiedemann–Franz Relation in Melts
of Indium and Gallium Antimonides

Ya. B. Magomedov and A. R. Bilalov p. 499  abstract

Specific Features of Photoconductivity in Thin n-PbTe:Ga Epilayers

B. A. Akimov, V. A. Bogoyavlenski, L. I. Ryabova, and V. N. Vasil’kov p. 502  abstract

Dynamic Effect of a Constant Electric Field on the Kinetics of Photons Interacting
with Electrons in a Semiconductor

R. Kh. Amirov and V. N. Gusyatnikov p. 506  abstract

Studies of the Infrared Luminescence of ZnSe Doped with Copper and Oxygen

N. K. Morozova, I. A. Karetnikov, V. V. Blinov, and E. M. Gavrishchuk p. 512  abstract

On the Origin of the Luminescence Band with h_m = 1.5133 eV in Gallium Arsenide

K. D. Glinchuk, N. M. Litovchenko, A. V. Prokhorovich, and O. N. Stril’chuk p. 516  abstract

BeCdSe: A New Material for the Active Region in Devices Operating
in the Blue–Green Region of the Spectrum

O. V. Nekrutkina, S. V. Sorokin, V. A. Kagorodov, A. A. Sitnikova, T. V. Shubina, A. A. Toropov,
S. V. Ivanov, P. S. Kop’ev, G. Reuscher, V. Wagner, J. Geurts, A. Waag, and G. Landwehr p. 520  abstract

Semiconductor Structures, Interfaces, and Surfaces

Method for Determining the Stoichiometric Composition of a Mercury
Cadmium Telluride Solid Solution from Capacitance–Voltage Characteristics

I. M. Ivankiv, A. M. Yafyasov, V. B. Bogevol’nov, and A. D. Perepelkin p. 525  abstract

Mechanism of the Current Flow in Pd–(Heavily Doped p-Al_xGa_{1 – x}N) Ohmic Contact

T. V. Blank, Yu. A. Goldberg, E. V. Kalinina, O. V. Konstantinov, A. E. Nikolaev,
A. V. Fomin, and A. E. Cherenkov p. 529  abstract

Thermodynamic Analysis of the Growth of GaAsN Ternary Compounds
by Molecular Beam Epitaxy

V. A. Odnoblyudov, A. R. Kovsh, A. E. Zhukov, N. A. Maleev, E. S. Semenova, and V. M. Ustinov p. 533  abstract

An Analysis of the Charge-Transport Mechanisms Defining the Reverse
Current–Voltage Characteristics of the Metal–GaAs Barriers

S. V. Bulyarski and A. V. Zhukov p. 539  abstract

Low-Dimensional Systems

Photoelectric Spectroscopy of InAs/GaAs Quantum Dot Heterostructures
in a Semiconductor/Electrolyte System

I. A. Karpovich, A. P. Gorshkov, S. B. Levichev, S. V. Morozov, B. N. Zvonkov, and D. O. Filatov p. 543  abstract

Manifestation of the Upper Hubbard Band in the Electrical Conductivity
of Two-Dimensional p-GaAs–AlGaAs Structures

N. V. Agrinskaya, Yu. L. Ivanov, V. M. Ustinov, and D. A. Poloskin p. 550  abstract

Superlattice Conductivity under the Action of a Nonlinear Electromagnetic Wave

D. V. Zav’yalov and S. V. Kryuchkov p. 554  abstract

Nonlinear Interaction of Waves in a Semiconductor Superlattice

A. A. Bulgakov and O. V. Shramkova p. 557  abstract

The Distribution Function of Hot Charge Carriers under Conditions of Resonance Scattering

A. A. Prokof’ev, M. A. Odnoblyudov, and I. N. Yassievich p. 565  abstract

Electron Transport in Silicon Carbide Natural Superlattices
under the Wannier–Stark Quantization Conditions: Basic Issues and Application Prospects

V. I. Sankin and P. P. Shkrebi p. 573  abstract

Amorphous, Vitreous, and Porous Semiconductors

Silicon Network in a-Si:H Films Containing Ordered Inclusions

O. A. Golikova, E. V. Bogdanova, M. M. Kazanin, A. N. Kuznetsov, V. A. Terekhov,
V. M. Kashkarov, and O. V. Ostapenko p. 579  abstract

Excitation of Luminescence in Porous Silicon with Adsorbed Ozone Molecules

S. N. Kuznetsov, V. B. Pikulev, A. A. Saren, Yu. E. Gardin, and V. A. Gurtov p. 583  abstract

Drift Mobility of Carriers in Porous Silicon

N. S. Averkiev, L. P. Kazakova, É. A. Lebedev, and N. N. Smirnova p. 588  abstract

The Effect of Bombardment with Carbon Ions on the Nanostructure of Diamond-like Films

I. A. Fazrakhmanov, V. V. Bazarov, V. A. Zhikharev, and I. B. Khabullin p. 591  abstract

Physics of Semiconductor Devices

Light Emitting Diodes for the Spectral Range = 3.3–4.3 m Fabricated
from InGaAs and InAsSbP Solid Solutions: Electroluminescence
in the Temperature Range of 20–180°C (Part 2)

M. Adaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remenny,
N. M. Stus’, and G. N. Talalakin p. 598  abstract

A New Structure of the CdS-Based Surface-Barrier Ultraviolet Sensor

S. Yu. Pavelets, Yu. N. Bobrenko, A. V. Komashchenko, and T. E. Shengeliya p. 605  abstract

Impact Ionization Wave Breakdown of Drift Step Recovery Diodes

V. A. Kozlov, A. F. Kardo-Sysoev, and V. I. Brylevski p. 608  abstract

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