Vol. 50, No. 5, 2016

Semiconductors

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Anisotropy of the Thermal Expansion of CuIn₅Se₈ Single Crystals in Two Structural Modifications

I. V. Bodnar p. 567 abstract

Electronic Properties of Semiconductors

Localization of the Interband Transitions in the Bulk of the Brillouin Zone of III–V Compound Crystals

V. V. Sobolev and D. A. Perevoshchikov p. 572 abstract

X-Ray Conductivity of ZnSe Single Crystals

V. Ya. Degoda and G. P. Podust p. 579 abstract

Spectroscopy, Interaction with Radiation

Stimulated Emission from a Metamorphic GaAsSb Bulk Layer on a GaAs Substrate

V. Ya. Aleshkin, A. A. Dubinov, K. E. Kudryavtsev, P. A. Yunin, M. N. Drozdov, O. V. Vikhrova, S. M. Nekorkin and B. N. Zvonkov p. 586 abstract

Surfaces, Interfaces, and Thin Films

Study of the Correlation Properties of the Surface Structure of nc-Si/a-Si:H Films with Different Fractions of the Crystalline Phase

A. V. Alpatov, S. P. Vikhrov, A. G. Kazanskii, V. L. Lyaskovskii, N. B. Rybin, N. V. Rybina and P. A. Forsh p. 590 abstract

Atomic Steps on an Ultraflat Si(111) Surface upon Sublimation

S. V. Sitnikov, A. V. Latyshev and S. S. Kosolobov p. 596 abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Study of the Phase Composition of Nanostructures Produced by the Local Anodic Oxidation of Titanium Films

V. I. Avilov, O. A. Ageev, B. G. Konoplev, V. A. Smirnov, M. S. Solodovnik and O. G. Tsukanova p. 601 abstract

Effect of Cadmium-Selenide Quantum Dots on the Conductivity and Photoconductivity of Nanocrystalline Indium Oxide

A. S. Il’in, N. P. Fantina, M. N. Martyshov, P. A. Forsh, A. S. Chizhov, M. N. Rumyantseva, A. M. Gaskov and P. K. Kashkarov p. 607 abstract

Optical Properties of Metamorphic GaAs/InAlGaAs/InGaAs Heterostructures with InAs/InGaAs Quantum Wells, Emitting Light in the 1250–1400-nm Spectral Range

A. Yu. Egorov, L. Ya. Karachinsky, I. I. Novikov, A. V. Babichev, V. N. Nevedomskiy and V. E. Bugrov p. 612 abstract

A New Simulation Model for Inhomogeneous Au/n-GaN Structure

Nese Kavasoglu, Abdulkadir Sertap Kavasoglu and Bengul Metin p. 616 abstract

Amorphous, Vitreous, and Organic Semiconductors

Piezoresistive and Posistor Effects in Polymer-Semiconductor and Polymer-Ferropiezoceramic Composites

H. A. Mamedov, L. Parali, M. A. Kurbanov, A. A. Bayramov, F. N. Tatardar and I. Sabikoglu p. 621 abstract

Lifetime of Excitons Localized in Si Nanocrystals in Amorphous Silicon

O. B. Gusev, A. V. Belolipetskiy, I. N. Yassievich, A. V. Kukin, E. E. Terukova and E. I. Terukov p. 627 abstract

Physics of Semiconductor Devices

Biosensor Properties of SOI Nanowire Transistors with a PEALD Al₂O₃ Dielectric Protective Layer

V. P. Popov, M. A. Ilnitskii, E. D. Zhanaev, A. V. Myakon’kich, K. V. Rudenko and A. V. Glukhov p. 632 abstract

Charge Transfer in Rectifying Oxide Heterostructures and Oxide Access Elements in ReRAM

G. B. Stefanovich, A. L. Pergament, P. P. Boriskov, V. A. Kuroptev and T. G. Stefanovich p. 639 abstract

Photodiode 1 × 64 Linear Array Based on a Double p-InAsSbP/n-InAs_0.92Sb_0.08/n-InAs Heterostructure

N. D. Il’inskaya, S. A. Karandashev, N. G. Karpukhina, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus and A. A. Usikova p. 646 abstract

GaAs/InGaAsN Heterostructures for Multi-Junction Solar Cells

E. V. Nikitina, A. S. Gudovskikh, A. A. Lazarenko, E. V. Pirogov, M. S. Sobolev, K. S. Zelentsov, I. A. Morozov and A. Yu. Egorov p. 652 abstract

Isothermal Current–Voltage Characteristics of High-Voltage 4H-SiC Junction Barrier Schottky Rectifiers

M. E. Levinshtein, P. A. Ivanov, Q. J. Zhang and J. W. Palmour p. 656 abstract

Multilayer Heterostructures for Quantum-Cascade Lasers Operating in the Terahertz Frequency Range

A. E. Zhukov, G. E. Cirlin, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, M. A. Kaliteevski, K. A. Ivanov, N. V. Kryzhanovskaya, M. V. Maximov and Zh. I. Alferov p. 662 abstract

Dependence of the Electron Capture Velocity on the Quantum-Well Depth in Semiconductor Lasers

Z. N. Sokolova, K. V. Bakhvalov, A. V. Lyutetskiy, N. A. Pikhtin, I. S. Tarasov and L. V. Asryan p. 667 abstract

Features of Carrier Tunneling between the Silicon Valence Band and Metal in Devices Based on the Al/High-K Oxide/SiO₂/Si Structure

M. I. Vexler and I. V. Grekhov p. 671 abstract

Radiation-Stimulated Processes in Transistor Temperature Sensors

B. V. Pavlyk and A. S. Grypa p. 678 abstract

Fabrication, Treatment, and Testing of Materials and Structures

Acanthite–Argentite Transformation in Nanocrystalline Silver Sulfide and the Ag₂S/Ag Nanoheterostructure

A. I. Gusev and S. I. Sadovnikov p. 682 abstract

Formation and Reconstruction of Se Nanoislands at the Surface of Thin Epitaxial ZnSe Layers Grown on GaAs Substrates

V. I. Kozlovskiy, V. S. Krivobok, P. I. Kuznetsov, S. N. Nikolaev, E. E. Onistchenko, A. A. Pruchkina and A. G. Temiryazev p. 688 abstract

Role of the Heat Accumulation Effect in the Multipulse Modes of the Femtosecond Laser Microstructuring of Silicon

I. V. Guk, G. D. Shandybina and E. B. Yakovlev p. 694 abstract

On the Laser Detachment of n-GaN Films from Substrates, Based on the Strong Absorption of IR Light by Free Charge Carriers in n⁺-GaN Substrates

M. V. Virko, V. S. Kogotkov, A. A. Leonidov, V. V. Voronenkov, Yu. T. Rebane, A. S. Zubrilov, R. I. Gorbunov, P. E. Latyshev, N. I. Bochkareva, Yu. S. Lelikov, D. V. Tarhin, A. N. Smirnov, V. Yu. Davydov and Yu. G. Shreter p. 699 abstract

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