Contents
Semiconductors

Vol. 47, No. 5, 2013

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Electronic Properties of Semiconductors

Dark-Current Relaxation in MnGa₂Se₄ Single Crystals

O. V. Tagiev, S. G. Asadullayeva, I. B. Bachtiyarly, and K. O. Tagiev p. 593  abstract

Magnetic Properties of (FeIn₂S₄)_1–x(In₂S₃)_x Alloy Single Crystals

I. V. Bodnar, M. A. Novikova, and S. V. Trukhanov p. 596  abstract

Surfaces, Interfaces, and Thin Films

The Mechanism of Charge Transfer in Bi₂(Te_0.9Se_0.1)₃ Solid Solution Thin Films

N. A. Abdullaev, N. M. Abdullaev, H. V. Aliguliyeva, A. M. Kerimova, K. M. Mustafayeva,
I. T. Mamedova, N. T. Mamedov, S. A. Nemov, and P. O. Bulanchuk p. 602  abstract

Crystallization Induced by Thermal Annealing with Millisecond Pulses
in Silicon-on-Insulator Films Implanted with High Doses of Hydrogen Ions

I. E. Tyschenko, V. A. Volodin, M. Voelskow, A. G. Cherkov, and V. P. Popov p. 606  abstract

Gallium-Oxide Films Obtained by Thermal Evaporation

V. M. Kalygina, A. N. Zarubin, V. A. Novikov, Yu. S. Petrova,
O. P. Tolbanov, A. V. Tyazhev, S. Yu. Tsupiy, and T. M. Yaskevich p. 612  abstract

Effect of Surface Scattering of Carriers in the Photoconductivity Spectra of CdS

A. S. Batyrev, R. A. Bisengaliev, and B. V. Novikov p. 619  abstract

Semiconductor Structures, Low-dimensional Systems, and Quantum Phenomena

Resonant Inelastic Light Scattering and Photoluminescence in Isolated nc-Si/SiO₂ Quantum Dots

F. B. Bairamov, V. V. Toporov, E. D. Poloskin, B. H. Bairamov, C. Rder, C. Sprung,
K. Bohmhammel, J. Seidel, G. Irmer, A. Lashkul, E. Lähderanta, and Y. W. Song p. 623  abstract

Domain-Size Evolution upon Switching of the States of a One-Dimensional System with Defects

B. V. Petukhov p. 628  abstract

Structural and Optical Properties of GaAs-Based Heterostructures
with Ge and Ge/InGaAs Quantum Wells

V. Ya. Aleshkin, A. A. Dubinov, M. N. Drozdov, B. N. Zvonkov,
K. E. Kudryavtsev, A. A. Tonkikh, A. N. Yablonskiy, and P. Werner p. 636  abstract

Conductivity Switching Effect in MIS Structures with Silicon-Based Insulators,
Fabricated by Low-Frequency Plasma-Enhanced Chemical Vapor Deposition Methods

A. E. Berdnikov, V. N. Gusev, A. A. Mironenko, A. A. Popov,
A. V. Perminov, A. C. Rudy, and V. D. Chernomordick p. 641  abstract

Photoluminescence Properties of Cadmium-Selenide Quantum Dots Embedded
in a Liquid-Crystal Polymer Matrix

G. I. Tselikov, V. Yu. Timoshenko, J. Plenge, E. Rühl, A. M. Shatalova,
G. A. Shandryuk, A. S. Merekalov, and R. V. Tal’roze p. 647  abstract

Conductivity of Nanocrystalline ZnO(Ga)

N. A. Vorobyeva, M. N. Rumyantseva, P. A. Forsh, and A. M. Gaskov p.650 abstract

Microcrystalline, Nanocrystalline, porous, and Composite Semiconductors

Model of the Formation of a Polycrystalline n-ZnO/p-CuO Heterojunction

Sh. R. Adilov, M. E. Kumekov, S. E. Kumekov, and E. I. Terukov p. 655  abstract

Electrophysical Properties of Mesoporous Silicon Passivated by Iron

D. I. Bilenko, V. V. Galushka, E. A. Zharkova,
I. B. Mysenko, D. V. Terin, and E. I. Khasina p. 657  abstract

Carbon Systems

Tunneling Current of the Contact between Impurity-containing Graphene Nanoribbons

M. B. Belonenko, A. V. Pak, and N. G. Lebedev p. 662  abstract

Physics of Semiconductor Devices

Effect of a Weak Magnetic Field on the Micromechanical
and Electrical Properties of Silicon for Use in Solar Power Engineering

V. A. Makara, O. A. Korotchenkov, L. P. Steblenko,
A. A. Podolian, and D. V. Kalinichenko p. 665  abstract

Generation of Powerful Microwave Voltage Oscillations in a Diffused Silicon Diode

S. K. Lyubutin, S. N. Rukin, B. G. Slovikovsky, and S. N. Tsyranov p. 670  abstract

Study of the Light-Induced Degradation of Tandem -Si:H/c-Si:H Photovoltaic Converters

V. M. Emelyanov, A. S. Abramov, A. V. Bobyl, A. S. Gudovskikh, D. L. Orekhov,
E. I. Terukov, N. Kh. Timoshina, O. I. Chosta^a, and M. Z. Shvarts p. 679  abstract

A General Simulation Procedure for the Electrical Characteristics
of Metal-Insulator-Semiconductor Tunnel Structures

M. I. Vexler, S. E. Tyaginov, Yu. Yu. Illarionov, Yew Kwang Sing,
Ang Diing Shenp, V. V. Fedorov, and D. V. Isakov p. 686  abstract

High-Frequency Electrical Properties of a Vertical-Cavity Surface-Emitting Laser
with a Monolithically Integrated Electro-Optical Modulator

A. M. Nadtochiy, W. Hofmann, T. D. Germann, S. A. Blokhin, L. Ya. Karachinskiy,
M. V. Maximov, V. A. Shchukin, A. E. Zhukov, and D. Bimberg p. 695  abstract

Improvement in the Quantum Sensitivity of InAs/InAsSb/InAsSbP Heterostructure Photodiodes

A. N. Imenkov, E. A. Grebenshchikova, D. A. Starostenko, V. V. Sherstnev,
G. G. Konovalov, I. A. Andreev, and Yu. P. Yakovlev p. 701  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Ionic Conductivity and Dielectric Relaxation in -Irradiated TlGaTe₂ Crystals

R. M. Sardarli, O. A. Samedov, A. P. Abdullayev, E. K. Huseynov,
F. T. Salmanov, N. A. Alieva, and R. Sh. Agaeva p. 707  abstract

Features of ZnS-Powder Doping with a Mn Impurity during Synthesis and Subsequent Annealing

N. E. Korsunska, Yu. Yu. Bacherikov, T. R. Stara, V. P. Kladko, N. P. Baran,
Yu. O. Polishchuk, A. V. Kuchuk, A. G. Zhuk, and Ye. F. Venger p. 713  abstract

Chemical Passivation of InSb (100) Substrates in Aqueous Solutions of Sodium Sulfide

T. V. Lvova, M. S. Dunaevskii, M. V. Lebedev, A. L. Shakhmin, I. V. Sedova, and S.V. Ivanov p.721 abstract

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