Contents
Semiconductors

Vol. 45, No. 5, 2011

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Electronic Properties of Semiconductors

Photoconductivity of Pyrolytic CdS Films Alloyed with Cs

T. L. Maiorova, V. G. Kluyev, and T. V. Samofalova p. 567  abstract

Effect of a High-Energy Proton-Irradiation Dose on the Electron Mobility in n-Si Crystals

T. A. Pagava, N. I. Maisuradze, and M. G. Beridze p. 572  abstract

Theoretical Investigations of the g Factors and the Hyperfine Structure Constants
of the Cr⁴⁺ and Mn⁵⁺ Centrs in Silicon

Zhi-Hong Zhang, Shao-Yi Wu, and Pei Xu p. 577  abstract

Spectroscopy, Interaction with Radiation

Charge Spectroscopy of SiO₂ Layers with Embedded Silicon Nanocrystals Modified
by Irradiation with High-Energy Ions

I. V. Antonova, S. A. Smagulova, E. P. Neustroev, V. A. Skuratov,
J. Jedrzejewski, E. Savir, and I. Balberg p. 582  abstract

Surfaces, Interfaces, and Thin Films

Electronic States on Silicon Surface after Deposition and Annealing of SiO_x Films

N. A. Vlasenko, P. F. Oleksenko, Z. L. Denisova, N. V. Sopinskii, L. I. Veligura,
E. G. Gule, O. S. Litvin, and M. A. Mukhlyo p. 587  abstract

The Role of Nonequilibrium Charge in Generation
of the Thermopower in Extrinsic Semiconductors

A. Konin p. 593  abstract

The Effect of a Magnetic Field on Electrical Properties
of Surface-Barrier Bi–Si–Al Structures

B. V. Pavlyk, A. S. Hrypa, D. P. Slobodzyan, R. M. Lys, J. A. Shykoryak, and R. I. Didyk p. 599  abstract

Electrical and Gas-Sensitive Properties of Nanostructured SnO₂:ZrO₂ Semiconductor Films

S. I. Rembeza, N. N. Kosheleva, E. S. Rembeza, T. V. Svistova,
Yu. V. Shmatova, and Gang Xu p. 603  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Photosensitive Structures Based on CuIn₅Te₈ Single Crystals: Development and Properties

I. V. Bodnar, V. Yu. Rud, Yu. V. Rud, E. I. Terukov, and A. M. Kovalchuk p. 607  abstract

Amorphous, Vitreous, and Organic Semiconductors

Study of Dielectric Processes in (As₂Se₃)_1–xBi_x Amorphous Films

R. A. Kastro and G. I. Grabko p. 611  abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Enhancement of Photoluminescence and Raman Scattering
in One-Dimensional Photonic Crystals Based on Porous Silicon

K. A. Gonchar, G. K. Musabek, T. I. Taurbayev, and V. Yu. Timoshenko p.614  abstract

Carbon Systems

On Charge Transfer in the Adsorbed Molecules–Graphene Monolayer–SiC Substrate System

S. Yu. Davydov p. 618  abstract

Low-Temperature Transport Properties of Multigraphene Films Grown
on the SiC Surface by Sublimation

A. A. Lebedev, N. V. Agrinskaya, S. P. Lebedev, M. G. Mynbaeva, V. N. Petrov,
A. N. Smirnov, A. M. Strel’chuk, A. N. Titkov, and D. V. Shamshur p. 623  abstract

Absolute Negative Conductivity of Graphene with Impurities in Magnetic Field

M. B. Belonenko, N. G. Lebedev, N. N. Yanyushkina, and M. M. Shakirzyanov p. 628  abstract

Insulator Band Gap in Graphane Nanoribbons

L. A. Openov and A. I. Podlivaev p. 633  abstract

Physics of Semiconductor Devices

Current Response of a TlBr Detector to ¹³⁷Cs -Ray Radiation

I. M. Gazizov, V. M. Zaletin, V. M. Kukushkin, and V. S. Khrunov p. 636  abstract

Simultaneous TE₁ and TE₂ Mode Lasing Yielding Dual-Wavelength Oscillation
in a Semiconductor Laser with a Tunnel Junction

V. Ya. Aleshkin, T. S. Babushkina, A. A. Birykov, A. A. Dubinov, B. N. Zvonkov,
M. N. Kolesnikov, and S. M. Nekorkin p. 641  abstract

A New InGaP/GaAs Tunneling Heterostructure–Emitter Bipolar Transistor (T-HEBT)

Jung-Hui Tsai, Ching-Sung Lee, Wen-Shiung Lour, Yung-Chun Ma, and Sheng-Shiun Ye p. 646  abstract

Characteristics Study of 2DEG Transport Properties
of AlGaN/GaN and AlGaAs/GaAs-based HEMT

T. R. Lenka and A. K. Panda p. 650  abstract

Effect of the Built-in Electric Field on Optical and Electrical Properties
of AlGaAs/InGaAs/GaAs P-HEMT Nanoheterostructures

R. A. Khabibullin, I. S. Vasil’evskii, G. B. Galiev, E. A. Klimov, D. S. Ponomarev,
V. P. Gladkov, V. A. Kulbachinskii, A. N. Klochkov, and N. A. Uzeeva p. 657  abstract

Analysis of Threshold Conditions for Generation of a Closed Mode
in a Fabry–Perot Semiconductor Laser

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, Z. N. Sokolova,
A. Y. Leshko, and I. S. Tarasov p. 663  abstract

High-Voltage (3.3 kV) 4H-SiC JBS Diodes

P. A. Ivanov, I. V. Grekhov, N. D. Il’inskaya, O. I. Kon’kov, A. S. Potapov,
T. P. Samsonova, and O. U. Serebrennikova p. 668  abstract

Electroluminescence and Absorption Spectra of Low-Optical-Loss Semiconductor Lasers
based on InGaAs/AlGaAs/GaAs QW Heterostructures

S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, A. L. Stankevich, N. A. Rudova,
A. Y. Leshko, and I. S. Tarasov p. 673  abstract

Dynamic Properties of AlGaAs Vertical Cavity Surface Emitting Lasers
with Active Region Based on Submonolayer InAs Insertions

A. M. Nadtochiy, S. A. Blokhin, A. Mutig, J. A. Lott, N. N. Ledentsov,
L. Ya. Karachinskiy, M. V. Maximov, V. M. Ustinov, and D. Bimber p. 679  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Ion Implantation of Platinum from Pulsed Laser Plasma for Fabrication
of a Hydrogen Detector Based on an n-6H-SiC Crystal

V. Yu. Fominskii, R. I. Romanov, A. G. Gnedovets, V. V. Zuev, M. V. Demin, and V. V. Grigoriev p. 685  abstract

Fabrication of por-Si/SnO_x Nanocomposite Layers for Gas Microsensors and Nanosensors

V. V. Bolotov, P. M. Korusenko, S. N. Nesov, S. N. Povoroznyuk, V. E. Roslikov, E. A. Kurdyukova,
Yu. A. Sten’kin, R. V. Shelyagin, E. V. Knyazev, V. E. Kan, and I. V. Ponomareva p. 693  abstract

The Influence of Substrate Temperature on the Structural and Optical Properties of ZnS Thin Films

M. Ashraf, S. M. J. Akhtar, Z. Ali, and A. Qayyum p. 699  abstract

Personalia

Vadim Valentinovich Emtsev (On His 70th Birthday) p.703

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