Contents
Semiconductors


Vol. 44, No. 5, 2010

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.


Review

Initial Stages of the Development of Semiconductor Electronics in the Soviet Union
(60 Years from the Invention of the Transistor)

V. I. Stafeev p. 551  abstract


Electrical and Optical Properties of Semiconductors

Optical and Dielectric Characteristics of the Rare-Earth Metal Oxide Lu2O3

S. V. Ordin and A. I. Shelykh p. 558  abstract

Electrical and Morphological Properties of CdTe Films Synthesized
by the Method of Molecular Deposition

V. A. Mayorov, A. M. Yafaysov, V. B. Bogevolnov, and V. F. Radanstev p. 564  abstract

Specific Features of the Luminescence and Conductivity of Zinc Selenide
on Exposure to X-Ray and Optical Excitation

V. Ya. Degoda and A. O. Sofienko p. 568  abstract

The Role of Underbarrier Transitions in Processes of Annihilation
of Excess Charge Carriers in II–VI Semiconductors

G. F. Novikov, E. V. Rabenok, and M. V. Gapanovich p. 575  abstract

Optical Properties of (CuInSe2)1–x(2MnSe)x Alloys

I. V. Bodnar p. 581  abstract

Specific Features of Conductivity of -Irradiated TlGaTe2 Crystals
with Nanochain Structure

R. M. Sardarli, O. A. Samedov, A. P. Abdullayev, E. K. Huseynov,
F. T. Salmanov, and G. R. Safarova
p. 585  abstract


Semiconductor Structures, Interfaces, and Surfaces

Effect of the Periphery of Metal–Semiconductor Contacts
with Schottky Barriers on Their Static Current–Voltage Characteristic

N. A. Torkhov p. 590  abstract

Adsorption of Alkali Metals and Their Effect on Electronic Properties
of Grain Boundaries in Bulk of Polycrystalline Silicon

L. O. Olimov p. 602  abstract

Effect of Different Chemical Treatments of Surface
on the Height of Al–p-SiGe and Au–n-SiGe Barriers

I. G. Atabaev, N. A. Matchanov, M. U. Hajiev, V. Pak, and T. M. Saliev p. 605  abstract


Low-Dimensional Systems

Current–Voltage Characteristics of Silicon-Doped GaAs Nanowhiskers
with a Protecting AlGaAs Coating Overgrown with an Undoped GaAs Layer

P. A. Dementyev, M. S. Dunaevskii, Yu. B. Samsonenko, G. E. Cirlin, and A. N. Titkov p.610  abstract

Persistent Photoconductivity in InAs/AlSb Heterostructures with Double Quantum Wells

V. I. Gavrilenko, A. V. Ikonnikov, S. S. Krishtopenko, A. A. Lastovkin,
K. V. Marem’yanin, Yu. G. Sadofyev, and K. E. Spirin
p. 616  abstract

Study and Simulation of Magnetic Susceptibility of Si and Si0.95Ge0.05 Whiskers

V. M. Tsmots, P. G. Litovchenko, N. T. Pavlovska,
Yu. V. Pavlovskyy, and I. P. Ostrovskyy
p. 623  abstract

Dependence of the Stimulated Luminescence Threshold
in ZnO Nanocrystals on Their Geometric Shape

A. N. Gruzintsev, A. N. Redkin, and C. Barthou p. 628  abstract


Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites

Structural Features of the Photogeneration Mechanism of Free Charge Carriers
in Element-Containing Polydisalicylidene Azomethine Series

E. L. Aleksandrova, A. G. Ivanov, N. M. Geller, and V. V. Shamanin p. 634  abstract

Optical Properties of Iron-Passivated Nanoporous Silicon

O. Yu. Shevchenko, D. N. Goryachev, L. V. Belyakov, and O. M. Sreseli p. 642  abstract


Physics of Semiconductor Devices

Some Features of Photocurrent Generation in Single-
and Multibarrier Photodiode Structures

A. V. Karimov and D. M. Yodgorova p. 647  abstract

Excess Leakage Currents in High-Voltage 4H-SiC Schottky Diodes

P. A. Ivanov, I. V. Grekhov, A. S. Potapov, T. P. Samsonova, N. D. Il’inskaya,
O. I. Kon’kov, and O. Yu. Serebrennikova
p. 653  abstract

Raising the Quantum Efficiency of AlGaInN Flip-Chip LEDs
by Reactive Ion Etching of the Outer Side of SiC Substrates

I. P. Smirnova, L. K. Markov, E. M. Arakcheeva, A. S. Pavluchenko,
D. A. Zakgeim, and M. M. Kulagina
p. 657  abstract

Temperature Delocalization of Charge Carriers in Semiconductor Lasers

S. O. Slipchenko, I. S. Shashkin, L. S. Vavilova, D. A. Vinokurov, A. V. Lyutetskiy,
N. A. Pikhtin, A. A. Podoskin, A. L. Stankevich, N. V. Fetisova, and I. S. Tarasov
p. 661  abstract


Fabrication, Treatment, and Testing of Materials and Structures

Features of Subthreshold Defect Formation in CdS and CdS:Cu Single Crystals Subjected
to Irradiation with X-Ray Photons

G. L. Mironchuk, H. Ye. Davidyuk, V. V. Bozhko, and V. Kaframe0ukauskas p. 667  abstract

Molecular Beam Epitaxy of Thermodynamically Metastable GaInAsSb Alloys
for Medium IR-Range Photodetectors

A. N. Semenov, Ya. V. Terent’ev, B. Ya. Meltser, V. A. Solov’ev,
T. V. Popova, A. V. Nashchekin, I. A. Andreev, E. V. Kunitsyna, A. A. Usikova,
Yu. P. Yakovlev, and S. V. Ivanov
p. 672  abstract

Comparative Study of Changes in Electrical Properties of Silicon
and Silicon Carbide upon Proton Irradiation

V. V. Emtsev, A. M. Ivanov, V. V. Kozlovskii, A. A. Lebedev,
G. A. Oganesyan, and N. B. Strokan
p. 678  abstract

Luminescent and Structural Properties of ZnO–Ag Films

V. S. Khomchenko, V. I. Kushnirenko, V. P. Papusha, A. K. Savin, and O. S. Lytvyn p.685  abstract


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