-Irradiated TlGaTe2 Crystals with Nanochain Structure
Contents
Semiconductors
Vol. 44, No. 5, 2010
A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.
Review
Initial Stages of the Development of Semiconductor Electronics in the Soviet Union
(60 Years from the Invention of the Transistor)
V. I. Stafeev p. 551 abstract
Electrical and Optical Properties of Semiconductors
Optical and Dielectric Characteristics of the Rare-Earth Metal Oxide Lu2O3
S. V. Ordin and A. I. Shelykh p. 558 abstract
Electrical and Morphological Properties of CdTe Films Synthesized
by the Method of Molecular Deposition
V. A. Mayorov, A. M. Yafaysov, V. B. Bogevolnov, and V. F. Radanstev p. 564 abstract
Specific Features of the Luminescence and Conductivity of Zinc Selenide
on Exposure to X-Ray and Optical Excitation
V. Ya. Degoda and A. O. Sofienko p. 568 abstract
The Role of Underbarrier Transitions in Processes of Annihilation
of Excess Charge Carriers in II–VI Semiconductors
G. F. Novikov, E. V. Rabenok, and M. V. Gapanovich p. 575 abstract
Optical Properties of (CuInSe2)1–x(2MnSe)x Alloys
I. V. Bodnar p. 581 abstract
Specific Features of Conductivity of -Irradiated TlGaTe2 Crystals
with Nanochain Structure
R. M. Sardarli, O. A. Samedov, A. P. Abdullayev, E. K. Huseynov,
F. T. Salmanov, and G. R. Safarova p. 585 abstract
Semiconductor Structures, Interfaces, and Surfaces
Effect of the Periphery of Metal–Semiconductor Contacts
with Schottky Barriers on Their Static Current–Voltage Characteristic
N. A. Torkhov p. 590 abstract
Adsorption of Alkali Metals and Their Effect on Electronic Properties
of Grain Boundaries in Bulk of Polycrystalline Silicon
L. O. Olimov p. 602 abstract
Effect of Different Chemical Treatments of Surface
on the Height of Al–p-SiGe and Au–n-SiGe Barriers
I. G. Atabaev, N. A. Matchanov, M. U. Hajiev, V. Pak, and T. M. Saliev p. 605 abstract
Low-Dimensional Systems
Current–Voltage Characteristics of Silicon-Doped GaAs Nanowhiskers
with a Protecting AlGaAs Coating Overgrown with an Undoped GaAs Layer
P. A. Dementyev, M. S. Dunaevskii, Yu. B. Samsonenko, G. E. Cirlin, and A. N. Titkov p.610 abstract
Persistent Photoconductivity in InAs/AlSb Heterostructures with Double Quantum Wells
V. I. Gavrilenko, A. V. Ikonnikov, S. S. Krishtopenko, A. A. Lastovkin,
K. V. Marem’yanin, Yu. G. Sadofyev, and K. E. Spirin p. 616 abstract
Study and Simulation of Magnetic Susceptibility of Si and Si0.95Ge0.05 Whiskers
V. M. Tsmots, P. G. Litovchenko, N. T. Pavlovska,
Yu. V. Pavlovskyy, and I. P. Ostrovskyy p. 623 abstract
Dependence of the Stimulated Luminescence Threshold
in ZnO Nanocrystals on Their Geometric Shape
A. N. Gruzintsev, A. N. Redkin, and C. Barthou p. 628 abstract
Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites
Structural Features of the Photogeneration Mechanism of Free Charge Carriers
in Element-Containing Polydisalicylidene Azomethine Series
E. L. Aleksandrova, A. G. Ivanov, N. M. Geller, and V. V. Shamanin p. 634 abstract
Optical Properties of Iron-Passivated Nanoporous Silicon
O. Yu. Shevchenko, D. N. Goryachev, L. V. Belyakov, and O. M. Sreseli p. 642 abstract
Physics of Semiconductor Devices
Some Features of Photocurrent Generation in Single-
and Multibarrier Photodiode Structures
A. V. Karimov and D. M. Yodgorova p. 647 abstract
Excess Leakage Currents in High-Voltage 4H-SiC Schottky Diodes
P. A. Ivanov, I. V. Grekhov, A. S. Potapov, T. P. Samsonova, N. D. Il’inskaya,
O. I. Kon’kov, and O. Yu. Serebrennikova p. 653 abstract
Raising the Quantum Efficiency of AlGaInN Flip-Chip LEDs
by Reactive Ion Etching of the Outer Side of SiC Substrates
I. P. Smirnova, L. K. Markov, E. M. Arakcheeva, A. S. Pavluchenko,
D. A. Zakgeim, and M. M. Kulagina p. 657 abstract
Temperature Delocalization of Charge Carriers in Semiconductor Lasers
S. O. Slipchenko, I. S. Shashkin, L. S. Vavilova, D. A. Vinokurov, A. V. Lyutetskiy,
N. A. Pikhtin, A. A. Podoskin, A. L. Stankevich, N. V. Fetisova, and I. S. Tarasov p. 661 abstract
Fabrication, Treatment, and Testing of Materials and Structures
Features of Subthreshold Defect Formation in CdS and CdS:Cu Single Crystals Subjected
to Irradiation with X-Ray Photons
G. L. Mironchuk, H. Ye. Davidyuk, V. V. Bozhko, and V. Kaukauskas p. 667 abstract
Molecular Beam Epitaxy of Thermodynamically Metastable GaInAsSb Alloys
for Medium IR-Range Photodetectors
A. N. Semenov, Ya. V. Terent’ev, B. Ya. Meltser, V. A. Solov’ev,
T. V. Popova, A. V. Nashchekin, I. A. Andreev, E. V. Kunitsyna, A. A. Usikova,
Yu. P. Yakovlev, and S. V. Ivanov p. 672 abstract
Comparative Study of Changes in Electrical Properties of Silicon
and Silicon Carbide upon Proton Irradiation
V. V. Emtsev, A. M. Ivanov, V. V. Kozlovskii, A. A. Lebedev,
G. A. Oganesyan, and N. B. Strokan p. 678 abstract
Luminescent and Structural Properties of ZnO–Ag Films
V. S. Khomchenko, V. I. Kushnirenko, V. P. Papusha, A. K. Savin, and O. S. Lytvyn p.685 abstract
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