Contents
Semiconductors

Vol. 42, No. 4, 2008

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Electronic and Optical Properties of Semiconductors

Laser-Stimulated Modification of the Impurity Energy Spectrum
of Gallium Selenide Intercalated with Cobalt

I. I. Grygorchak, A. I. Pelekhovych, and N. V. Volynskaya p. 375  abstract

Determination of the Energy and Concentration of Amphoteric Defects
by Differential Processing of the Temperature Dependence
of the Concentration of Free Charge Carriers

A. G. Nikitina and V. V. Zuev p. 379  abstract

Effect of Transverse Magnetic Field on the Behavior of Longitudinal Autosolitons in p-InSb

I. K. Kamilov, A. A. Stepurenko, A. E. Gummetov, and A. S. Kovalev p. 383  abstract

Special Features of Optical and Photoelectric Properties of Nominally Undoped
and Cu-Doped CdS Single Crystals

G. E. Davidyuk, V. V. Bozhko, G. L. Mironchuk, L. V. Bulatetskaya, and A. G. Kevshin p. 389  abstract

Effect of Fluctuations on Electron and Phonon Processes
and Thermodynamic Parameters of Ag₂Te and Ag₂Se in the Region of Phase Transition

S. A. Aliev and F. F. Aliev p. 394  abstract

Magnetic Susceptibility of Bi₂Te–Sb₂Te₃ Alloys

N. P. Stepanov, A. K. Gil’fanov, L. D. Ivanova, and Yu. V. Granatkina p. 401  abstract

Semiconductor Structures, Interfaces, and Surfaces

Effect of Conditions of Deposition and Annealing of Indium Oxide Films Doped
with Fluorine (IFO) on the Photovoltaic Properties of the IFO/p-Si Heterojunction

G. G. Untila, T. N. Kost, A. B. Chebotareva, M. B. Zaks, A. M. Sitnikov, and O. I. Solodukha p. 406  abstract

Native Oxide Emerging of the Cleavage Surface of Gallium Selenide Due to Prolonged Storage

S. I. Drapak, S. V. Gavrylyuk, Z. D. Kovalyuk, and O. S. Lytvyn p. 414  abstract

Low-Temperature Anomalies of the Photoelectromagnetic Effect
in p-Cd_xHg_1–xTe due to Recharging of Surface States

S. G. Gassan-zade, M. V. Strikha, and G. A. Shepelsky p. 422  abstract

Low-Dimensional Systems

Emission Spectra of InGaN/AlGaN/GaN Quantum Well Heterostructures:
Model of the Two-Dimensional Joint Density of States

M. L. Badgutdinov and A. É. Yunovich p. 429  abstract

Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites

Effect of Temperature and Illumination Intensity on the Formation of Metastable States in a-Si:H

I. A. Kurova and N. N. Ormont p. 439  abstract

Physics of Semiconductor Devices

Dynamics of Formation of Photoresponse in a Detector Structure Made of Gallium Arsenide

G. I. Ayzenshtat, M. A. Lelekov, and O. P. Tolbanov p. 443  abstract

Development of Photodetectors for Image Converters:
Doping of Silicon with Selenium from the Gas Phase

Yu. A. Astrov, V. B. Shuman, A. N. Lodygin, L. M. Portsel, and A. N. Makhova p. 448  abstract

Thermal-Resistant TiB_x–n-GaP Schottky Diodes

A. E. Belyaev, N. S. Boltovets, V. N. Ivanov, A. B. Kamalov, L. M. Kapitanchuk,
R. V. Konakova, Ya. Ya. Kudryk, O. S. Lytvyn, V. V. Milenin, and M. U. Nasyrov p. 453  abstract

Low-Noise Photodiodes Based on GaSb/GaInAsSb/AlGaAsSb
Double Heterostructures for the 1–4.8 m Spectral Range

B. E. Zhurtanov, N. D. Il’inskaya, A. N. Imenkov, M. P. Mikhalova, K. V. Kalinina,
M. A. Sipovskaya, N. D. Stoyanov, and Yu. P. Yakovlev p. 458  abstract

Nonlinear-Optical Frequency Conversion in a Dual-Wavelength
Vertical-External-Cavity Surface-Emitting Laser

Yu. A. Morozov, I. S. Nefedov, T. Leinonen, and M. Yu. Morozov p. 463  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Boundary Effect in Electrochemical Etching of Silicon

E. V. Astrova and A. A. Nechitalov p. 470  abstract

Optical and Electron Spectroscopy Study of Initial Stages
of Room-Temperature Mg Film Growth on Si (111)

K. N. Galkin, S. A. Dotsenko, N. G. Galkin, M. Kumar, Govind, and S. M. Shivaprasad p. 475  abstract

Kinetics of Resistive Response of SnO_2–x Thin Films in Gas Environment

S. V. Ryabtsev, A. V. Yukish, S. I. Khango, Yu. A. Yurakov,
A. V. Shaposhnik, and É. P. Domashevskaya p. 481  abstract

Properties of Zinc Oxide Films Synthesized in Low-Temperature Plasma Discharge
under Conditions of Bombardment with Plasma Components

A. A. Serdobintsev, A. G. Veselov, and O. A. Kiryasova p. 486  abstract

Diagnostics of Low-Barrier Schottky Diodes with Near-Surface -Doping

V. I. Shashkin and A. V. Murel’ p. 490  abstract

Personalia

Zakhari Fishelevich Krasil’nik (Dedicated to His 60th Birthday) p. 493  abstract

Vladimir Ivanovich Ivanov-Omski(Dedicated to His 75th Birthday) p. 495  abstract

Rules for the Authors p. 496

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