Contents
Semiconductors

Vol. 41, No. 4, 2007

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

The 8th International Workshop on Beam Injection Assessment of Microstructures
in Semiconductors, June 11–14, 2006, St. Petersburg, Russia

In-depth Resolution for LBIC Technique by Two-Photon Absorption

D. Wan, V. Pouget, A. Douin, P. Jaulent, D. Lewis, and P. Fouillat p. 371  abstract

Structural Peculiarities of 4H-SiC Irradiated by Bi Ions

E. V. Kalinina, V. A. Skuratov, A. A. Sitnikova, E. V. Kolesnikova,
A. S. Tregubova, and M. P. Shcheglov p. 376  abstract

Si and Ge Nanocluster Formation in Silica Matrix

Roushdey Salh, L. Fitting, E. V. Kolesnikova, A. A. Sitnikova,
M. V. Zamoryanskaya, B. Schmidt, and H.-J. Fitting p. 381  abstract

Cathodoluminescence and TEM Studies of HVPE GaN Layers Grown
on Porous SiC Substrates

E. Kolesnikova, M. Mynbaeva, and A. Sitnikova p. 387  abstract

Cathodoluminescence Investigation of Silicon Nanowires Fabricated
by Thermal Evaporation of SiO

G. Jia, T. Arguirov, M. Kittler, Z. Su, D. Yang, and J. Sha p. 391  abstract

IBIC Characterization of Charge Transport in CdTe:Cl

P. J. Sellin, A. W. Davies, F. Boroumand, A. Lohstroh,
M. E. Özsan, J. Parkin, and M. Veale p. 395  abstract

EBIC Characterization of Strained Si/SiGe Heterostructures

E. B. Yakimov, R. H. Zhang, G. A. Rozgonyi, and M. Seacrist p. 402  abstract

Simulation and Measurements of EBIC Images of Photoconductive Elements Based on HgCdTe

V. V. Krapukhin, P. S. Vergeles, and E. B. Yakimov p. 407  abstract

EBIC Measurements of Small Diffusion Length in Semiconductor Structures

E. B. Yakimov, S. S. Borisov, and S. I. Zaitsev p. 411  abstract

Photoinduced Transient Spectroscopy of Defect Centers in GaN and SiC

P. Kamiski, R. Kozowski, M. Kozubal, J. elazko,
M. Miczuga, and M. Pawowski p. 414  abstract

Micro- and Nano-Structures in Silicon Studied by DLTS and Scanning Probe Methods

D. Cavalcoli, A. Cavallini, M. Rossi, and S. Pizzini p. 421  abstract

The Use of Cathodoluminescence for the Development of Durable Self-Glowing
Crystals Based on Solid Solutions YPO₄–EuPO₄

B. E. Burakov, V. M. Garbuzov, A. A. Kitsay, V. A. Zirlin, M. A. Petrova,
Ya. V. Domracheva, M. V. Zamoryanskaya, E. V. Kolesnikova,
M. A. Yagovkina, and M. P. Orlova p. 427  abstract

STM and LEED Studies of Atomically Ordered Terraced Si(557) Surfaces

A. N. Chaika, S. I. Bozhko, A. M. Ionov, A. N. Myagkov, and N. V. Abrosimov p. 431  abstract

Photoluminescence Study on Defects in Multicrystalline Silicon

T. Arguirov, W. Seifer, G. Jia, and M. Kittler p. 436  abstract

Material-Induced Shunts in Multicrystalline Silicon Solar Cells

O. Breitenstein, J. Bauer, and J. P. Rakotoniaina p. 440  abstract

Mathematical Simulation of the Distribution of Minority Charge Carriers Generated
in a Multilayer Semiconducting Structure by a Wide Electron Beam

I. V. Burylova, V. I. Petrov, M. G. Snopova, and M. A. Stepovich p. 444  abstract

Initial Stages of Gold Adsorption on Silicon Stepped Surface at Elevated Temperatures

S. S. Kosolobov, Se Ahn Song, E. E. Rodyakina, and A. V. Latyshev p. 448  abstract

Multimodal Luminescence Spectra of Ion-Implanted Silica

H.-J. Fitting, Roushdey Salh, and B. Schmidt p. 453  abstract

Combined CL/EBIC/DLTS Investigation of a Regular Dislocation
Network Formed by Si Wafer Direct Bonding

X. Yu, O. Vyvenko, M. Kittler, W. Seifert, T. Mtchedlidze, T. Arguirov, and M. Reiche p. 458  abstract

Cathodoluminescence Study of Silicon Oxide–Silicon Interface

M. V. Zamoryanskaya and V. I. Sokolov p. 462  abstract

AFM Investigation of Thin Post-Baked Photoresistive Films
for Microsystem Technology Application

S. E. Alexandrov, A. B. Speshilova, Y. V. Soloviev, and O. I. Eremeychik p. 469  abstract

Cathodoluminescence Characteristics of Pseudomorphic Modulation-Doped
Quantum Well AlGaAs/InGaAs/AlGaAs Heterostructures
at High Carrier Densities and Their Radiation Damaging

V. S. Khrustalev, A. V. Bobyl, S. G. Konnikov, N. A. Maleev, and M. V. Zamoryanskaya p. 473  abstract

Cathodoluminescence of Laser A^IIB^VI Heterostructures

A. S. Ivanov, V. I. Vasilev, I. V. Sedova, S. V. Sorokin, A. A. Sitnikova,
S. G. Konnikov, T. B. Popova, and M. V. Zamoryanskaya p. 478  abstract

Evolution of Luminescence Properties of Natural Oxide on Silicon and Porous Silicon

R. V. Sokolov, M. V. Zamoryanskaya, E. V. Kolesnikova, and V. I. Sokolov p. 482  abstract

Diagnostics of Films and Layers of Nanometer Thickness
Using Middle Energy Ion Scattering Technique

V. V. Afrosimov, R. N. Il’in, V. I. Sakharov, and I. T. Serenkov p. 487  abstract

EBIC Characterization of Light-Emitting Structures Based on GaN

N. M. Shmidt, P. S. Vergeles, and E. B. Yakimov p. 491  abstract

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