Contents
Semiconductors

Vol. 39, No. 4, 2005

Simultaneous English language translation of the journal is available from Pleiades Publishing, Inc.
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Optical Absorption and Chromium Diffusion in ZnSe Single Crystals

Yu. F. Vaksman, V. V. Pavlov, Yu. A. Nitsuk, Yu. N. Purtov, A. S. Nasibov, and P. V. Shapkin p. 377  abstract

Electronic and Optical Properties of Semiconductors

Raman Spectra of the Laser-Irradiated GaSe Single Crystals

A. Badullaeva, Z. K. Vlasenko, B. K. Dauletmuratov, L. F. Kuzan, and P. E. Mozol’ p. 381  abstract

The Electrical and Optical Properties of InAs Irradiated with Electrons (~2 MeV):
The Energy Structure of Intrinsic Point Defects

V. N. Brudny, S. N. Grinyaev, and N. G. Kolin p. 385  abstract

The Transport and Thermoelectric Properties of Semiconducting Rhenium Silicide

A. B. Filonov, A. E. Krivosheev, L. I. Ivanenko, G. Behr, J. Schumann,
D. Souptel, and V. E. Borisenko p. 395  abstract

The Effect of the Charge State of Nonequilibrium Vacancies on the Nature
of Radiation Defects in n-Si Crystals

T. A. Pagava p. 400  abstract

Semiconductor Structures, Interfaces, and Surfaces

Photoconversion in n-ZnO:Al/PdPc/p-CuIn₃Se₅ Structures

I. V. Bodnar’, E. S. Dmitrieva, S. E. Nikitin, V. Yu. Rud’, Yu. V. Rud’, and E. I. Terukov p. 402  abstract

Edge Photoluminescence of Single-Crystal Silicon at Room Temperature

E. G. Gule, E. B. Kaganovich, I. M. Kizyak, E. G. Manoilov, and S. V. Svechnikov p. 406  abstract

Fabrication and Photoelectric Properties of n-ZnO:Al/PdPc/p-Si Structures

G. A. Il’chuk, S. E. Nikitin, Yu. A. Nikolaev, V. Yu. Rud’, Yu. V. Rud’, and E. I. Terukov p. 409  abstract

Low-Dimensional Systems

Effects of Spatial Reproduction as a Result of the Interference of Electron Waves
in Two-Dimensional Semiconductor Nanostructures with Parabolic Quantum Wells

V. A. Petrov and A. V. Nikitin p. 412  abstract

Effective Mass Anisotropy of Electrons in a GaAs/(AlGa)As Quantum Well

E. E. Vdovin and Yu. N. Khanin p. 421  abstract

A Quasi-Hydrodynamic Simulation of Electrical Conductivity in Selectively
Doped Submicrometer-Sized Layered Structures and Island Films in High Electric Fields

V. A. Gergel’, Yu. V. Gulyaev, V. A. Kurbatov, and M. N. Yakupov p. 429  abstract

The Exciton Photoluminescence and Vertical Transport of Photoinduced Carriers
in CdSe/CdMgSe Superlattices

I. I. Reshina, S. V. Ivanov, D. N. Mirlin, I. V. Sedova, and S. V. Sorokin p. 432  abstract

Resonance Donor States in Quantum Wells

N. A. Bekin p. 439  abstract

Amorphous, Vitreous, and Porous Semiconductors

Special Features of the Electrical Conductivity in Doped -Si:H Films with Silicon Nanocrystals

S. A. Arzhannikova, M. D. Efremov, G. N. Kamaev, A. V. Vishnyakov, and V. A. Volodin p. 448  abstract

An Electron Spin Resonance Study of Copper–Carbon Systems

B. P. Popov p. 455  abstract

Influence of Pyridine Molecule Adsorption on Concentrations of Free Carriers
and Paramagnetic Centers in Porous Silicon Layers

L. A. Osminkina, A. S. Vorontsov, E. A. Konstantinova, V. Yu. Timoshenko, and P. K. Kashkarov p. 458  abstract

Physics of Semiconductor Devices

Design and Fabrication Technology for Arrays for Vertical-Cavity Surface-Emitting Lasers

N. A. Maleev, A. G. Kuz’menkov, A. E. Zhukov, A. P. Vasil’ev, A. S. Shulenkov,
S. V. Chumak, E. V. Nikitina, S. A. Blokhin, M. M. Kulagina, E. S. Semenova,
D. A. Livshits, M. V. Maksimov, and V. M. Ustinov p. 462  abstract

A Study of Carrier Statistics in InGaN/GaN LED Structures

D. S. Sizov, V. S. Sizov, E. E. Zavarin, V. V. Lundin, A. V. Fomin,
A. F. Tsatsul’nikov, and N. N. Ledentsov p. 467  abstract

Interfacial and Interband Lasing in an InAs/InAsSbP Heterostructure Grown
by Vapor-Phase Epitaxy from Metal–Organic Compounds

A. P. Astakhova, N. D. Il’inskaya, A. N. Imenkov, S. S. Kizhaev,
S. S. Molchanov, and Yu. P. Yakovlev p. 472  abstract

Effect of p-Doping of the Active Region on the Temperature Stability of InAs/GaAs QD Lasers

I. I. Novikov, N. Yu. Gordeev, L. Ya. Karachinski, M. V. Maksimov, Yu. M. Shernyakov,
A. R. Kovsh, I. L. Krestnikov, A. V. Kozhukhov, S. S. Mikhrin, and N. N. Ledentsov p. 477  abstract

Temperature Dependence of the Effective Coefficient of Auger Recombination
in 1.3 m InAs/GaAs QD Lasers

I. I. Novikov, N. Yu. Gordeev, M. V. Maksimov, Yu. M. Shernyakov, E. S. Semenova,
A. P. Vasil’ev, A. E. Zhukov, V. M. Ustinov, and G. G. Zegrya p. 481  abstract

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