Contents
Semiconductors

Vol. 37, No. 4, 2003

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Structural Disordering and Viedemann–Franz Relation in Melts
of Some II–IV–V₂ Semiconductors

Ya. B. Magomedov and M. A. Adamirov p. 367  abstract

Electronic and Optical Properties of Semiconductors

Effect of Crystallization of Amorphous Vanadium Dioxide Films on the Parameters
of a Semiconductor–Metal Phase Transition

V. A. Klimov, I. O. Timofeeva, S. D. Khanin, E. B. Shadrin,
A. V. Il’inski, and F. Silva-Andrade p. 370  abstract

Recombination Current Instability in Epitaxial p⁺–n Structures
with Impurity Atoms Locally Incorporated into the n-type Region
and Determination of the Deep Center Parameters

B. S. Muravski^†, O. N. Kulikov, and V. N. Chernyi p. 375  abstract

Optical Reflection in (Pb_0.78Sn_0.22)_1–xIn_xTe Solid Solutions
with a High Indium Content

A. N. Ves and A. V. Nashchekin p. 380  abstract

Effect of Lattice Deformation on Semiconducting Properties of CrSi₂

A. V. Krivosheeva, V. L. Shaposhnikov, A. E. Krivosheev,
A. B. Filonov, and V. E. Borisenko p. 384  abstract

Electrical Properties of InAs Irradiated with Protons

V. N. Brudny, N. G. Kolin, and A. I. Potapov p. 390  abstract

Influence of Pulsed Laser Radiation on the Morphology
and Photoelectric Properties of InSb Crystals

V. A. Gnatyuk and E. S. Gorodnichenko p. 396  abstract

IR Birefringence in Artificial Crystal Fabricated by Anisotropic Etching of Silicon

E. V. Astrova^, T. S. Perova, V. A. Tolmachev,
A. D. Remenyuk, J. Vij, and A. Moore p. 399  abstract

Energy Levels of Vacancies and Interstitial Atoms in the Band Gap of Silicon

V. V. Lukjanitsa p. 404  abstract

Semiconductor Structures, Interfaces, and Surfaces

Photosensitive Structures Based on ZnIn₂Se₄ Single Crystals

A. A. Vaipolin, Yu. A. Nikolaev, V. Yu. Rud’, Yu. V. Rud’, and E. I. Terukov p. 414  abstract

Special Features of Electron Scattering at Al_xGa_1–xAs/AlAs(001) Interfaces

S. N. Grinyaev, G. F. Karavaev, and V. N. Chernyshov p. 417  abstract

The Charge Accumulation in an Insulator and the States at Interfaces
of Silicon-on-Insulator Structures as a Result of Irradiation
with Electrons and Gamma-Ray Photons

D. V. Nikolaev, I. V. Antonova, O. V. Naumova, V. P. Popov, and S. A. Smagulova p. 426  abstract

The Effect of Internal Fields on Tunneling Current
in Strained GaN/Al_xGa_1–xN(0001) Structures

S. N. Grinyaev and A. N. Razzhuvalov p. 433  abstract

Characteristics of Gallium Arsenide Structures and Gunn Devices Based
on Them Fabricated Using the Radiation–Thermal Technology

M. V. Ardyshev and V. M. Ardyshev p. 439  abstract

The Influence of Carbon on the Properties of Si/SiGe Heterostructures

M. Ya. Valakh, V. N. Dzhagan, L. A. Matveeva, A. S. Oberemok,
B. N. Romanyuk, and V. A. Yukhimchuk p. 443  abstract

Effect of Irradiation with Low-Energy Ar Ions on the Characteristics
of the Working and Rear Sides of Single-Crystal GaAs Substrate

A. S. Alalykin, P. N. Krylov, I. V. Fedotova, and A. B. Fedotov p. 448  abstract

Generation–Recombination Centers in CdTe:V

L. A. Kosyachenko, S. Yu. Paranchich, Yu. V. Tanasyuk, V. M. Sklyarchuk,
E. F. Sklyarchuk, E. L. Maslyanchuk, and V. V. Motushchuk p. 452  abstract

Special Features of Formation and Characteristics of Ni/21R-SiC Schottky Diodes

V. L. Litvinov, K. D. Demakov, O. A. Ageev, A. M. Svetlichnyi,
R. V. Konakova, P. M. Lytvyn, O. S. Lytvyn, and V. V. Milenin p. 456  abstract

Low-Dimensional Systems

Properties of Ge Nanocrystals Formed by Implantation of Ge⁺ Ions
into SiO₂ Films with Subsequent Annealing under Hydrostatic Pressure

I. E. Tyschenko, A. B. Talochkin, A. G. Cherkov, K. S. Zhuravlev,
A. Misiuk, M. Voelskow, and W. Skorupa p. 462  abstract

Amorphous, Vitreous, and Porous Semiconductors

Laser Ultrasonic Study of Porous Silicon Layers

S. M. Zharki, A. A. Karabutov, I. M. Pelivanov,
N. B. Podymova, and V. Yu. Timoshenko p. 468  abstract

Raman Spectroscopy of Amorphous Carbon Modified with Iron

S. G. Yastrebov, V. I. Ivanov-Omski, F. Dumitrache, and C. Morosanu p. 473  abstract

Electrolytic Fabrication of Porous Silicon with the Use of Internal Current Source

D. N. Goryachev, L. V. Belyakov, and O. M. Sreseli p. 477  abstract

Physics of Semicoductor Devices

3C-SiC p–n Structures Grown by Sublimation on 6H-SiC Substrates

A. A. Lebedev, A. M. Strel’chuk, D. V. Davydov, N. S. Savkina,
A. S. Tregubova, A. N. Kuznetsov, V. A. Solov’ev, and N. K. Poletaev p. 482  abstract

Current and Temperature Tuning of Quantum-Well Lasers Operating
in 2.0- to 2.4-m Range

A. P. Astakhova, A. N. Baranov, A. Viset, A. N. Imenkov,
N. M. Kolchanova, N. D. Stoyanov, A. Chernyaev,
D. A. Yarekha, and Yu. P. Yakovlev p. 485  abstract

Personalia

Vladimir Ivanovich Ivanov-Omski (dedicated to his 70th birthday) p. 491

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