Contents
Semiconductors
Vol. 37, No. 4, 2003
Simultaneous English language translation of the journal is available from MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.
Atomic Structure and Nonelectronic Properties of Semiconductors
Structural Disordering and ViedemannFranz Relation in Melts
of Some IIIVV2 Semiconductors
Ya. B. Magomedov and M. A. Adamirov p. 367 abstract
Electronic and Optical Properties of Semiconductors
Effect of Crystallization of Amorphous Vanadium Dioxide Films on the Parameters
of a SemiconductorMetal Phase Transition
V. A. Klimov, I. O. Timofeeva, S. D. Khanin, E. B. Shadrin,
A. V. Ilinski, and F. Silva-Andrade p. 370 abstract
Recombination Current Instability in Epitaxial p+n Structures
with Impurity Atoms Locally Incorporated into the n-type Region
and Determination of the Deep Center Parameters
B. S. Muravski, O. N. Kulikov, and V. N. Chernyi p. 375 abstract
Optical Reflection in (Pb0.78Sn0.22)1xInxTe Solid Solutions
with a High Indium Content
A. N. Ves and A. V. Nashchekin p. 380 abstract
Effect of Lattice Deformation on Semiconducting Properties of CrSi2
A. V. Krivosheeva, V. L. Shaposhnikov, A. E. Krivosheev,
A. B. Filonov, and V. E. Borisenko p. 384 abstract
Electrical Properties of InAs Irradiated with Protons
V. N. Brudny, N. G. Kolin, and A. I. Potapov p. 390 abstract
Influence of Pulsed Laser Radiation on the Morphology
and Photoelectric Properties of InSb Crystals
V. A. Gnatyuk and E. S. Gorodnichenko p. 396 abstract
IR Birefringence in Artificial Crystal Fabricated by Anisotropic Etching of Silicon
E. V. Astrova^, T. S. Perova, V. A. Tolmachev,
A. D. Remenyuk, J. Vij, and A. Moore p. 399 abstract
Energy Levels of Vacancies and Interstitial Atoms in the Band Gap of Silicon
V. V. Lukjanitsa p. 404 abstract
Semiconductor Structures, Interfaces, and Surfaces
Photosensitive Structures Based on ZnIn2Se4 Single Crystals
A. A. Vaipolin, Yu. A. Nikolaev, V. Yu. Rud, Yu. V. Rud, and E. I. Terukov p. 414 abstract
Special Features of Electron Scattering at AlxGa1xAs/AlAs(001) Interfaces
S. N. Grinyaev, G. F. Karavaev, and V. N. Chernyshov p. 417 abstract
The Charge Accumulation in an Insulator and the States at Interfaces
of Silicon-on-Insulator Structures as a Result of Irradiation
with Electrons and Gamma-Ray Photons
D. V. Nikolaev, I. V. Antonova, O. V. Naumova, V. P. Popov, and S. A. Smagulova p. 426 abstract
The Effect of Internal Fields on Tunneling Current
in Strained GaN/AlxGa1xN(0001) Structures
S. N. Grinyaev and A. N. Razzhuvalov p. 433 abstract
Characteristics of Gallium Arsenide Structures and Gunn Devices Based
on Them Fabricated Using the RadiationThermal Technology
M. V. Ardyshev and V. M. Ardyshev p. 439 abstract
The Influence of Carbon on the Properties of Si/SiGe Heterostructures
M. Ya. Valakh, V. N. Dzhagan, L. A. Matveeva, A. S. Oberemok,
B. N. Romanyuk, and V. A. Yukhimchuk p. 443 abstract
Effect of Irradiation with Low-Energy Ar Ions on the Characteristics
of the Working and Rear Sides of Single-Crystal GaAs Substrate
A. S. Alalykin, P. N. Krylov, I. V. Fedotova, and A. B. Fedotov p. 448 abstract
GenerationRecombination Centers in CdTe:V
L. A. Kosyachenko, S. Yu. Paranchich, Yu. V. Tanasyuk, V. M. Sklyarchuk,
E. F. Sklyarchuk, E. L. Maslyanchuk, and V. V. Motushchuk p. 452 abstract
Special Features of Formation and Characteristics of Ni/21R-SiC Schottky Diodes
V. L. Litvinov, K. D. Demakov, O. A. Ageev, A. M. Svetlichnyi,
R. V. Konakova, P. M. Lytvyn, O. S. Lytvyn, and V. V. Milenin p. 456 abstract
Low-Dimensional Systems
Properties of Ge Nanocrystals Formed by Implantation of Ge+ Ions
into SiO2 Films with Subsequent Annealing under Hydrostatic Pressure
I. E. Tyschenko, A. B. Talochkin, A. G. Cherkov, K. S. Zhuravlev,
A. Misiuk, M. Voelskow, and W. Skorupa p. 462 abstract
Amorphous, Vitreous, and Porous Semiconductors
Laser Ultrasonic Study of Porous Silicon Layers
S. M. Zharki, A. A. Karabutov, I. M. Pelivanov,
N. B. Podymova, and V. Yu. Timoshenko p. 468 abstract
Raman Spectroscopy of Amorphous Carbon Modified with Iron
S. G. Yastrebov, V. I. Ivanov-Omski, F. Dumitrache, and C. Morosanu p. 473 abstract
Electrolytic Fabrication of Porous Silicon with the Use of Internal Current Source
D. N. Goryachev, L. V. Belyakov, and O. M. Sreseli p. 477 abstract
Physics of Semicoductor Devices
3C-SiC pn Structures Grown by Sublimation on 6H-SiC Substrates
A. A. Lebedev, A. M. Strelchuk, D. V. Davydov, N. S. Savkina,
A. S. Tregubova, A. N. Kuznetsov, V. A. Solovev, and N. K. Poletaev p. 482 abstract
Current and Temperature Tuning of Quantum-Well Lasers Operating
in 2.0- to 2.4-m Range
A. P. Astakhova, A. N. Baranov, A. Viset, A. N. Imenkov,
N. M. Kolchanova, N. D. Stoyanov, A. Chernyaev,
D. A. Yarekha, and Yu. P. Yakovlev p. 485 abstract
Personalia
Vladimir Ivanovich Ivanov-Omski
(dedicated to his 70th birthday) p. 491
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