Contents
Semiconductors

Vol. 36, No. 4, 2002

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Changes in the State of Phosphorus Atoms in the Silicon Lattice as a Result
of Interaction with Radiation Defects

V. V. Bolotov, G. N. Kamaev, and L. S. Smirnov p. 363  abstract

Ultrasonically Stimulated Low-Temperature Redistribution of Impurities in Silicon

I. V. Ostrovski, A. B. Nadtochi, and A. A. Podolyan p. 367  abstract

Simulation of Low-Temperature Arsenic Diffusion from a Heavily Doped Silicon Layer

O. V. Aleksandrov p. 370  abstract

Electronic and Optical Properties of Semiconductors

Generalized Character of the Dielectric Response of CdTe Crystals Grown from the Melt

I. A. Klimenko and V. P. Migal’ p. 375  abstract

Effect of the Radial Electric Field on Absorption in a Quantized Spherical Layer

V. A. Arutyunyan p. 379  abstract

Photoelectric C–V Profiling of Majority Charge Carriers and Effective Lifetimes
of Minority Charge Carriers in Gettered GaAs Wafers

V. F. Andrievski, A. T. Gorelenok, N. A. Zagorel’skaya, A. V. Kamanin, and N. M. Shmidt p. 382  abstract

Effective Electron Mass in Heavily Doped GaAs in the Ordering of Impurity Complexes

V. A. Bogdanova, N. A. Davletkil’deev, N. A. Semikolenova, and E. N. Sidorov p. 385  abstract

Determination of the Matrix Element of the Quasi-Momentum Operator
in the Zero-Gap Semiconductor HgSe by the Field-Effect Method in Electrolyte

O. Yu. Shevchenko, V. F. Radantsev, A. M. Yafyasov, V. B. Bozhevol’nov,
I. M. Ivankiv, and A. D. Perepelkin p. 390  abstract

Energy Transfer of Ce³⁺ Eu²⁺ in the CaGa₂S₄ Compound

R. B. Dzhabbarov p. 394  abstract

Features of Optical Properties of Al_xGa_1–xN Solid Solutions

V. G. Debuk, A. V. Vozny, and M. M. Sletov p. 398  abstract

Increase in Quantum Efficiency of IR Emission in Elastically Strained
Narrow-Gap Semiconductors

S. G. Gasan-zade, M. V. Strikha, S. V. Stary, G. A. Shepel’ski, and V. A. Boko p. 404  abstract

Analysis and Refinement of Mathematical Tools for Modified Time-of-Flight Method

S. P. Vikhrov, N. V. Vishnyakov, A. A. Maslov, and V. G. Mishustin p. 410  abstract

Semiconductor Structures, Interfaces, and Surfaces

Causes of Variation in the Static Current–Voltage Characteristics of the Structures
with the Me/n–n⁺-GaAs Schottky Barrier on Hydrogenation

N. A. Torkhov p. 414  abstract

Field Effect in a System Consisting of Electrolyte and (TlBiSe₂)_1–x–(TlBiS₂)_x Solid Solution

O. Yu. Shevchenko, A. M. Yafyasov, V. B. Bozhevol’nov,
I. M. Ivankiv, and A. D. Perepelkin p. 420  abstract

Effect of Surface on the Excitonic Characteristics of Semiconductors

V. G. Litovchenko, N. L. Dmitruk, D. V. Korbutyak, and A. V. Sarikov p. 424  abstract

Nature of the Edge Electroluminescence Peak in the Si:(Er,O) Diode Breakdown Mode

A. M. Emel’yanov, Yu. A. Nikolaev, and N. A. Sobolev p. 430  abstract

Low-Dimensional Systems

Control of the Interband and Intersubband Transition Energy in Quantum Wells
Using Localized Isoelectronic Perturbations

K. Durinyan, A. Zatikyan, and S. Petrosyan p. 434  abstract

Quantized Conductance in Silicon Quantum Wires

N. T. Bagraev, A. D. Buravlev, L. E. Klyachkin, A. M. Malyarenko,
W. Gehlhoff, V. K. Ivanov, and I. A. Shelykh p. 439  abstract

Exciton Recombination in -Doped Type-II GaAs/AlAs Superlattices

K. S. Zhuravlev, A. K. Sulamanov, A. M. Gilinski, L. S. Braginski,
A. I. Toropov, and A. K. Bakarov p. 461  abstract

Amorphous, Vitreous, and Porous Semiconductors

The Effect of Adsorption on the Electrical Properties of Structures Based
on Oxidized Porous Silicon

D. I. Bilenko, O. Ya. Belobrovaya, É. A. Zharkova,
I. B. Mysenko, and E. I. Khasina p. 466  abstract

Physics of Semiconductor Devices

Special Features of Electron Drift in Submicrometer GaAs Structures

V. A. Gergel’, E. Yu. Kul’kova, V. G. Mokerov,
M. V. Timofeev, and G. Yu. Khrenov p. 472  abstract

Long-Term Variation of Electrical and Photoelectric Characteristics
of Pd–p-InP Diode Structures

S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu p. 476  abstract

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