Contents

Semiconductors

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Vol. 55, No. 4, 2021

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Formation of Semipolar Group-III-nitride Layers on Textured Si(100) Substrates with Self-forming Nanomask

V. N. Bessolov, E. V. Konenkova, S. N. Rodin, D. S. Kibalov and V. K. Smirnov p. 395  abstract

Adsorption of Group-II and -VI Atoms on Silicon-Carbide Polytypes

S. Yu. Davydov and O. V. Posrednik p. 399  abstract

High-Voltage 4H-SiC-Based Avalanche Diodes with a Negative Bevel

P. A. Ivanov, N. M. Lebedeva, N. D. Il’inskaya, T. P. Samsonova and O. I. Kon’kov p. 405  abstract

Influence of the Design Features of a Magnetron Sputtering Deposition System on the Electrical and Optical Properties of Indium—Tin Oxide Films

D. A. Kudriashov, A. A. Maksimova, E. A. Vyacheslavova, A. V. Uvarov, I. A. Morozov, A. I. Baranov, A. O. Monastyrenko and A. S. Gudovskikh p. 410  abstract

Semiconductor Sensor of the Thermoelectric Single-Photon Detector for Recording Near-Infrared Radiation

A. A. Kuzanyan p. 415  abstract

Formation of Silicon Nanoclusters in Disproportionation of Silicon Monoxide

D. A. Lozhkina, E. V. Astrova, R. V. Sokolov, D. A. Kirilenko, A. A. Levin, A. V. Parfeneva and V. P. Ulin p. 423  abstract

Application of Atomic Layer Deposition for the Formation of Nanostructured ITO/Al₂O₃ Coatings

L. K. Markov, A. S. Pavluchenko, I. P. Smirnova, M. V. Mesh and D. S. Kolokolov p. 438  abstract

Current–Voltage, Capacitance–Voltage–Temperature, and DLTS Studies of Ni|6H-SiC Schottky Diode

A. Rabehi, B. Akkal, M. Amrani, S. Tizi, Z. Benamara, H. Helal, A. Douara, B. Nail and A. Ziane p. 446  abstract

High-Power CW InGaAs/AlGaAs (1070 nm) Lasers with a Broadened Lateral Waveguide of the Mesa-Stripe Design

I. S. Shashkin, A. Yu. Leshko, V. V. Shamakhov, N. V. Voronkova, V. A. Kapitonov, K. V. Bakhvalov, S. O. Slipchenko, N. A. Pikhtin and P. S. Kop’ev p. 455  abstract

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