Vol. 54, No. 4, 2020

Semiconductors

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Investigation of the Magnesium Impurity in Silicon

L. M. Portsel, V. B. Shuman, A. A. Lavrent’ev, A. N. Lodygin, N. V. Abrosimov and Yu. A. Astrov p. 393 abstract

Electronic Properties of Semiconductors

Temperature-Dependent Total Absorption of Exciton Polaritons in Bulk Semiconductors

R. P. Seisyan and S. A. Vaganov p. 399 abstract

Dielectric Spectroscopy and Mechanism of the Semiconductor–Metal Phase Transition in Doped VO₂:Ge and VO₂:Mg Films

A. V. Ilinskiy, R. A. Kastro, M. E. Pashkevich and E. B. Shadrin p. 403 abstract

Spectroscopy, Interaction with Radiation

Raman Scattering in the InSb–MnSb Eutectic Composite

I. Kh. Mammadov, D. H. Arasly, R. N. Rahimov and A. A. Khalilova p. 412 abstract

Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures

P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Lenshin, A. M. Mizerov, S. N. Timoshnev, E. V. Nikitina, I. N. Arsentiev and S. A. Kukushkin p. 417 abstract

Surfaces, Interfaces, and Thin Films

Dependence of the Crystallization Kinetics of Cr_0.26Si_0.74 Thin Films on Their Thickness

S. V. Novikov, V. S. Kuznetsova, A. T. Burkov and J. Schumann p. 426 abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Size Quantization in n-GaP

V. R. Rasulov, P. Ya. Rasulov, I. M. Eshboltaev and R. R. Sultonov p. 429 abstract

On the Dominant Mechanism of the Nonradiative Excitation of Manganese Ions in II–VI Diluted Magnetic Semiconductors

A. V. Chernenko p. 433 abstract

Amorphous, Vitreous, and Organic Semiconductors

Modification of the Photoelectric Properties of Undoped Hydrogenated Amorphous Silicon Films under Preliminary Illumination at Elevated Temperatures

N. N. Ormont and I. A. Kurova p. 437 abstract

Growth and Characterization of TCNQ-Doped Ni(II)TAAB Thin Film As a New π-Conjugated Organic Semiconductor

M. E. Sánchez-Vergara, B. Molina, A. Hernández-García, J. R. Álvarez-Bada and R. Salcedo p. 441 abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Multilevel Recording in Ge₂Sb₂Te₅ Thin Films

S. A. Fefelov, L. P. Kazakova, N. A. Bogoslovskiy, A. B. Bylev and A. O. Yakubov p. 450 abstract

Study of the Properties of Two-Dimensional MoS₂ and WS₂ Films Synthesized by Chemical-Vapor Deposition

S. A. Smagulova, P. V. Vinokurov, A. A. Semenova, E. I. Popova, F. D. Vasylieva, E. D. Obraztsova, P. V. Fedotov and I. V. Antonova p. 454 abstract

Carbon Systems

Terahertz Photoconductivity in Graphene in a Magnetic Field

Yu. B. Vasiliev, S. N. Novikov, S. N. Danilov and S. D. Ganichev p. 465 abstract

Physics of Semiconductor Devices

Surface Modification of SOI Sensors for the Detection of RNA Biomarkers

O. V. Naumova, B. I. Fomin, E. V. Dmitrienko, I. A. Pyshnaya and D. V. Pyshnyi p. 471 abstract

Effects of Doping of Bragg Reflector Layers on the Electrical Characteristics of InGaAs/GaAs Metamorphic Photovoltaic Converters

V. M. Emelyanov, N. A. Kalyuzhnyy, S. A. Mintairov, M. V. Nakhimovich, R. A. Salii and M. Z. Shvarts p. 476 abstract

Light Characteristics of Narrow-Stripe High-Power Semiconductor Lasers (1060 nm) Based on Asymmetric AlGaAs/GaAs Heterostructures with a Broad Waveguide

I. S. Shashkin, A. Y. Leshko, D. N. Nikolaev, V. V. Shamakhov, N. A. Rudova, K. V. Bakhvalov, A. V. Lutetskiy, V. A. Kapitonov, V. V. Zolotarev, S. O. Slipchenko, N. A. Pikhtin and P. S. Kop’ev p. 484 abstract

Single-Mode Lasers (1050 nm) of Mesa-Stripe Design Based on an AlGaAs/GaAs Heterostructure with an Ultra-Narrow Waveguide

I. S. Shashkin, A. Y. Leshko, D. N. Nikolaev, V. V. Shamakhov, D. A. Veselov, N. A. Rudova, K. V. Bakhvalov, V. V. Zolotarev, S. O. Slipchenko, N. A. Pikhtin and P. S. Kop’ev p. 489 abstract

Investigation into the Internal Electric-Field Strength in the Active Region of InGaN/GaN-Based LED Structures with Various Numbers of Quantum Wells by Electrotransmission Spectroscopy

A. E. Aslanyan, L. P. Avakyants, A. V. Chervyakov, A. N. Turkin, S. S. Mirzai, V. A. Kureshov, D. R. Sabitov and A. A. Marmalyuk p. 495 abstract

TCAD Simulation Study of Single-, Double-, and Triple-Material Gate Engineered Trigate FinFETs

P. Vimala and T. S. Arun Samuel p. 501 abstract

Fabrication, Treatment, and Testing of Materials and Structures

Features of SiO₂ Layers Synthesized on Silicon by Molecular Layer Deposition

A. P. Baraban, E. A. Denisov, V. A. Dmitriev, A. V. Drozd, V. E. Drozd, A. A. Selivanov and R. P. Seisyan p. 506 abstract

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