Contents
Semiconductors

Vol. 35, No. 4, 2001

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

The Effect of Various Types of Shallow Impurities and Their Concentration
on Microhardness and Photomechanical Properties of Semiconductors

A. B. Gerasimov and G. D. Chiradze p. 371  abstract

Laser Beam Epitaxy of HgCdTe/Si Heterostructures

S. V. Plyatsko and N. N. Bergush p. 374  abstract

Electronic and Optical Properties of Semiconductors

Emission from Hot Charge Carriers during the Formation of High-Field Autosolitons
in Electron–Hole Plasma in n-Ge

M. N. Vinoslavski and A. V. Kravchenko p. 377  abstract

An Analysis of the Shape of a Luminescence Band Induced by Transitions
of Free Electrons to Carbon Atoms in Semi-Insulating Undoped GaAs Crystals

K. D. Glinchuk, N. M. Litovchenko, A. V. Prokhorovich, and O. N. Stril’chuk p. 384  abstract

Relaxation Features of the Dielectric Response of Cd_{1 – x}Zn_xTe Crystals Grown
from the Melt

I. A. Klimenko, V. K. Komar’, V. P. Migal’, and D. P. Nalivako p. 391  abstract

Semiempirical Model of Carrier Mobility in Silicon Carbide for Analyzing Its Dependence
on Temperature and Doping Level

T. T. Mnatsakanov, L. I. Pomortseva, and S. N. Yurkov p. 394  abstract

Dipole Moments of Ligands and Stark Splitting of Levels of Rare-Earth Ions

M. M. Chumachkova and A. B. Rotsin^† p. 398  abstract

Mechanisms of Incorporation of an Antimony Impurity into Cadmium Telluride Crystals

E. S. Nikonyuk, Z. I. Zakharuk, V. L. Shlyakhovy, P. M. Fochuk, and A. I. Rarenko p. 405  abstract

A Study of the Electrical and Optical Properties of Si Delta-Doped GaAs Layers
Grown by MBE on a (111)A GaAs Surface Misoriented toward the [2 1 1] Direction

G. B. Galiev, V. G. Mokerov, É. R. Lyapin, V. V. Sarakin, and Yu. V. Khabarov p. 409  abstract

Semiconductor Structures, Interfaces, and Surfaces

The Use of the Amphoteric Nature of Impurity Silicon Atoms
for Obtaining Planar p–n Junctions on GaAs (111)A Substrates by Molecular Beam Epitaxy

G. B. Galiev, V. É. Kaminski, V. G. Mokerov, and L. É. Velikhovski p. 415  abstract

Structural, Luminescent, and Transport Properties of Hybrid AlAsSb/InAs/Cd(Mg)Se Heterostructures
Grown by Molecular Beam Epitaxy

V. A. Solov’ev, I. V. Sedova, A. A. Toropov, Ya. V. Terent’ev, S. V. Sorokin,
B. Ya. Mel’tser, S. V. Ivanov, and P. S. Kop’ev p. 419  abstract

Interface States and Capacitance–Voltage Characteristics of n-SnO₂:Ni/p-Si Heterostructures
under Gas-Adsorption Conditions

R. B. Vasil’ev, A. M. Gas’kov, M. N. Rumyantseva, L. I. Ryabova, and B. A. Akimov p. 424  abstract

The Transition Layer in TiB₂–GaAs and Au–TiB₂–GaAs Schottky Contacts

E. F. Venger, R. V. Konakova, O. B. Okhrimenko, S. Yu. Sapko, L. V. Shekhovtsov, and V. N. Ivanov p. 427  abstract

Hot-Hole Lateral Transport in a Two-Dimensional GaAs/Al_0.3Ga_0.7As Structure

Yu. L. Ivanov, I. V. Elizarov, V. M. Ustinov, and A. E. Zhukov p. 433  abstract

Low-Dimensional Systems

Conductance of Quasi-Two-Dimensional Semiconductor Systems
with Electrostatic Disorder in the Region of the Percolation Metal–Insulator Transition

B. A. Aronzon, D. A. Bakaushin, A. S. Vedeneev, A. B. Davydov,
E. Z. Melikhov, and N. K. Chumakov p. 436  abstract

Plasma Oscillations in Two-Dimensional Semiconductor Superstructures
in the Presence of a High Electric Field

S. Yu. Glazov and S. V. Kryuchkov p. 444  abstract

Magnetic-Field-Induced Transitions between Minibands in GaAs/Al_xGa_{1 – x}As Superlattices

V. F. Sapega, D. N. Mirlin, T. Ruf, M. Cardona, W. Winter, and K. Eberl p. 447  abstract

Physics of Semiconductors Devices

The Effect of Pulsed Laser Annealing on the Parameters of Cd_xHg_{1 – x}Te Photoresistors

V. N. Ryzhkov, M. I. Ibragimova, and N. S. Baryshev p. 451  abstract

Photodiodes for a 1.5–4.8 m Spectral Range, Based on Type-II GaSb/InGaAsSb Heterostructures

N. D. Stoyanov, M. P. Mikhalova, O. V. Andrechuk, K. D. Moiseev,
I. A. Andreev, M. A. Afrailov, and Yu. P. Yakovlev p. 453  abstract

Photoelectric Characteristics of Infrared Photodetectors
with Blocked Hopping Conduction

D. G. Esaev and S. P. Sinitsa p. 459  abstract

Suppression of Current by Light in p-Si–n⁺-ZnO–n-ZnO–Pd Diode Structures

S. V. Slobodchikov, Kh. M. Salikhov, E. V. Russu, and Yu. G. Malinin p. 464  abstract

A Study of Deep Traps at the SiO₂/6H-SiC Interface Relying
upon the Nonequilibrium Field Effect

P. A. Ivanov, T. P. Samsonova, V. N. Panteleev, and D. Yu. Polyakov p. 468  abstract

Consideration of the “Island” Background Charge in Single-Electron Transistor Simulation

I. I. Abramov and E. G. Novik p. 474  abstract

The Effect of Dislocations Formed during Growth on the Structure
and Photoluminescence of i–n^––n–n⁺-GaAs Epilayers
and on the Related Microwave Transistors Parameters

M. P. Lisitsa, F. V. Motsny, V. F. Motsny, and I. V. Prokopenko p. 477  abstract

Radiation Hardness of SiC Ion Detectors under Relativistic Protons

A. M. Ivanov, N. B. Strokan, D. V. Davydov, N. S. Savkina, A. A. Lebedev,
Yu. T. Mironov, G. A. Ryabov, and E. M. Ivanov p. 481  abstract

The Thermal Cross-Interference Effects in the Arrays of Vertical-Cavity Surface-Emitting Lasers

S. M. Zakharov p. 485  abstract

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