Contents
Semiconductors
Vol. 35, No. 4, 2001
Simultaneous
English language translation of the journal is available from
MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors
ISSN 1063-7826.
Atomic Structure and Nonelectronic Properties of Semiconductors
The Effect of
Various Types of Shallow Impurities and Their Concentration
on Microhardness and Photomechanical Properties of Semiconductors
A. B. Gerasimov and G. D. Chiradze p. 371 abstract
Laser Beam Epitaxy of HgCdTe/Si Heterostructures
S. V. Plyatsko and N. N. Bergush p. 374 abstract
Electronic and Optical Properties of Semiconductors
Emission from Hot
Charge Carriers during the Formation of High-Field Autosolitons
in ElectronHole Plasma in n-Ge
M. N. Vinoslavski
and A. V. Kravchenko p. 377 abstract
An Analysis of the
Shape of a Luminescence Band Induced by Transitions
of Free Electrons to Carbon Atoms in Semi-Insulating Undoped GaAs
Crystals
K. D. Glinchuk, N. M. Litovchenko, A. V. Prokhorovich, and O. N. Strilchuk p. 384 abstract
Relaxation
Features of the Dielectric Response of Cd1 xZnxTe
Crystals Grown
from the Melt
I. A. Klimenko, V. K. Komar, V. P. Migal, and D. P. Naliva
ko p. 391 abstract
Semiempirical
Model of Carrier Mobility in Silicon Carbide for Analyzing Its
Dependence
on Temperature and Doping Level
T. T. Mnatsakanov, L. I. Pomortseva, and S. N. Yurkov p. 394 abstract
Dipole Moments of Ligands and Stark Splitting of Levels of Rare-Earth Ions
M. M. Chumachkova and A. B. Ro
tsin p. 398 abstract
Mechanisms of Incorporation of an Antimony Impurity into Cadmium Telluride Crystals
E. S. Nikonyuk, Z. I. Zakharuk, V. L. Shlyakhovy
, P. M. Fochuk, and A. I. Rarenko p. 405 abstract
A Study of the
Electrical and Optical Properties of Si Delta-Doped GaAs Layers
Grown by MBE on a (111)A GaAs Surface Misoriented toward the [2 1
1] Direction
G. B. Galiev, V. G. Mokerov, É. R. Lyapin, V. V. Sara
kin, and Yu. V. Khabarov p. 409 abstract
Semiconductor Structures, Interfaces, and Surfaces
The Use of the
Amphoteric Nature of Impurity Silicon Atoms
for Obtaining Planar pn Junctions on GaAs
(111)A Substrates by Molecular Beam Epitaxy
G. B. Galiev, V. É. Kaminski
, V. G. Mokerov, and L. É. Velikhovski
p. 415 abstract
Structural,
Luminescent, and Transport Properties of Hybrid
AlAsSb/InAs/Cd(Mg)Se Heterostructures
Grown by Molecular Beam Epitaxy
V. A. Solovev, I. V. Sedova, A. A. Toropov, Ya. V. Terentev, S. V. Sorokin,
B. Ya. Meltser, S. V. Ivanov, and P. S. Kopev p. 419 abstract
Interface States
and CapacitanceVoltage Characteristics of n-SnO2:Ni/p-Si
Heterostructures
under Gas-Adsorption Conditions
R. B. Vasilev, A. M. Gaskov, M. N. Rumyantseva, L. I. Ryabova, and B. A. Akimov p. 424 abstract
The Transition Layer in TiB2GaAs and AuTiB2GaAs Schottky Contacts
E. F. Venger, R. V. Konakova, O. B. Okhrimenko, S. Yu. Sapko, L. V. Shekhovtsov, and V. N. Ivanov p. 427 abstract
Hot-Hole Lateral Transport in a Two-Dimensional GaAs/Al0.3Ga0.7As Structure
Yu. L. Ivanov, I. V. Elizarov, V. M. Ustinov, and A. E. Zhukov p. 433 abstract
Low-Dimensional Systems
Conductance of
Quasi-Two-Dimensional Semiconductor Systems
with Electrostatic Disorder in the Region of the Percolation
MetalInsulator Transition
B. A. Aronzon, D. A. Bakaushin, A. S. Vedeneev, A. B. Davydov,
E. Z. Melikhov, and N. K. Chumakov p. 436 abstract
Plasma
Oscillations in Two-Dimensional Semiconductor Superstructures
in the Presence of a High Electric Field
S. Yu. Glazov and S. V. Kryuchkov p. 444 abstract
Magnetic-Field-Induced Transitions between Minibands in GaAs/AlxGa1 xAs Superlattices
V. F. Sapega, D. N. Mirlin, T. Ruf, M. Cardona, W. Winter, and K. Eberl p. 447 abstract
Physics of Semiconductors Devices
The Effect of Pulsed Laser Annealing on the Parameters of CdxHg1 xTe Photoresistors
V. N. Ryzhkov, M. I. Ibragimova, and N. S. Baryshev p. 451 abstract
Photodiodes for a
1.54.8 m Spectral Range, Based on Type-II GaSb/InGaAsSb
Heterostructures
N. D. Stoyanov, M. P. Mikha
lova, O. V. Andre
chuk, K. D. Moiseev,
I. A. Andreev, M. A. Afrailov, and Yu. P. Yakovlev p. 453 abstract
Photoelectric
Characteristics of Infrared Photodetectors
with Blocked Hopping Conduction
D. G. Esaev and S. P. Sinitsa p. 459 abstract
Suppression of Current by Light in p-Sin+-ZnOn-ZnOPd Diode Structures
S. V. Slobodchikov, Kh. M. Salikhov, E. V. Russu, and Yu. G. Malinin p. 464 abstract
A Study of Deep
Traps at the SiO2/6H-SiC Interface Relying
upon the Nonequilibrium Field Effect
P. A. Ivanov, T. P. Samsonova, V. N. Panteleev, and D. Yu. Polyakov p. 468 abstract
Consideration of the Island Background Charge in Single-Electron Transistor Simulation
I. I. Abramov and E. G. Novik p. 474 abstract
The Effect of
Dislocations Formed during Growth on the Structure
and Photoluminescence of innn+-GaAs
Epilayers
and on the Related Microwave Transistors Parameters
M. P. Lisitsa, F. V. Motsny
, V. F. Motsny
, and I. V. Prokopenko p. 477 abstract
Radiation Hardness of SiC Ion Detectors under Relativistic Protons
A. M. Ivanov, N. B. Strokan, D. V. Davydov, N. S. Savkina, A. A. Lebedev,
Yu. T. Mironov, G. A. Ryabov, and E. M. Ivanov p. 481 abstract
The Thermal Cross-Interference Effects in the Arrays of Vertical-Cavity Surface-Emitting Lasers
S. M. Zakharov p. 485 abstract
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