Vol. 53, No. 4, 2019

Semiconductors

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Effect of Nickel and Copper Introduced at Room Temperature on the Recombination Properties of Extended Defects in Silicon

V. I. Orlov, N. A. Yarykin and E. B. Yakimov p. 411 abstract

Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film

N. A. Sobolev, V. I. Sakharov, I. T. Serenkov, A. D. Bondarev, K. V. Karabeshkin, E. V. Fomin, A. E. Kalyadin, V. M. Mikoushkin, E. I. Shek and E. V. Sherstnev p. 415 abstract

Electronic Properties of Semiconductors

Thermoelectric Characteristics of Heavily Doped p-Type Lead Telluride at Different Heavy-Hole Band Depths

A. V. Dmitriev p. 419 abstract

Spectroscopy, Interaction with Radiation

Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies

N. L. Bazhenov, K. D. Mynbaev, A. A. Semakova and G. G. Zegrya p. 428 abstract

Surfaces, Interfaces, and Thin Films

Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing

A. S. Petrov, S. V. Sitnikov, S. S. Kosolobov and A. V. Latyshev p. 434 abstract

Effect of a Second-Order Phase Transition on the Electrical Conductivity of Metal/Semiconductor Structures

I. R. Nabiullin, R. M. Gadiev and A. N. Lachinov p. 439 abstract

Simulated Contrast of Two Dislocations

M. Ledra and A. El Hdiy p. 442 abstract

Preparation and Characterization of Sol–Gel Dip Coated Al: ZnO (AZO) Thin Film for Opto-Electronic Application

K. Deva Arun Kumar, S. Valanarasu and S. Rex Rosario p. 447 abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Influence of the Substrate Material on the Properties of Gallium-Oxide Films and Gallium-Oxide-Based Structures

V. M. Kalygina, T. Z. Lygdenova, Yu. S. Petrova and E. V. Chernikov p. 452 abstract

Resonance Absorption of Electromagnetic Radiation in a Phosphorene Single Layer

V. V. Karpunin and V. A. Margulis p. 458 abstract

Features of the Characteristics of Field-Resistant Silicon–Ultrathin Oxide–Polysilicon Structures

E. I. Goldman, S. A. Levashov and G. V. Chucheva p. 465 abstract

Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n⁺–n-Si Diffusion Silicon Structures

A. E. Belyaev, N. S. Boltovets, V. P. Klad’ko, N. V. Safryuk-Romanenko, A. I. Lubchenko, V. N. Sheremet, V. V. Shynkarenko, A. S. Slepova, V. A. Pilipenko, T. V. Petlitskaya, A. S. Pilipchuk, R. V. Konakova and A. V. Sachenko p. 469 abstract

Investigation into the Distribution of Built-in Electric Fields in LED Heterostructures with Multiple GaN/InGaN Quantum Wells by Electroreflectance Spectroscopy

A. E. Aslanyan, L. P. Avakyants, P. Yu. Bokov and A. V. Chervyakov p. 477 abstract

Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two Dimensional Electron Gas

H. Khmissi and A. M. El Sayed p. 484 abstract

Electrical Characterization of Hybrid Halide Perovskites Based Heterojunction Device

Jyoti Chaudhary, Shaily Choudhary, Chandra Mohan Singh Negi, Saral K. Gupta and Ajay Singh Verma p. 489 abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Raman Scattering in InSb Spherical Nanocrystals Ion-Synthesized in Silicon-Oxide Films

I. E. Tyschenko, V. A. Volodin and V. P. Popov p. 493 abstract

Optical Properties of CdSe/ZnS Nanoparticles in Heat-Treated Polyvinylchloride Films

S. I. Rasmagin and I. K. Novikov p. 499 abstract

The Growth of InAs_xSb_{1 –} _x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy

E. A. Emelyanov, A. V. Vasev, B. R. Semyagin, M. Yu. Yesin, I. D. Loshkarev, A. P. Vasilenko, M. A. Putyato, M. O. Petrushkov and V. V. Preobrazhenskii p. 503 abstract

Physics of Semiconductor Devices

Large-Amplitude Shock Electromagnetic Wave in a Nonlinear Transmission Line Based on a Distributed Semiconductor Diode

A. S. Kyuregyan p. 511 abstract

High-Power Nano- and Picosecond Optoelectronic Switches Based on High-Voltage Silicon Structures with p–n Junctions. III. Self-Heating Effects

A. S. Kyuregyan p. 519 abstract

Inhomogeneous Injection and Heat-Transfer Processes in Reversely Switched Dynistors Operating in the Pulse-Frequency Repetition Modes with a Limited Heat Sink

A. V. Gorbatyuk and B. V. Ivanov p. 524 abstract

Formation of Porous Silicon by Nanopowder Sintering

E. V. Astrova, V. B. Voronkov, A. V. Nashchekin, A. V. Parfeneva, D. A. Lozhkina, M. V. Tomkovich and Yu. A. Kukushkina p. 530 abstract

Power Conversion Efficiencies of Perovskite and Dye-Sensitized Solar Cells under Various Solar Radiation Intensities

A. B. Nikolskaia, S. S. Kozlov, M. F. Vildanova and O. I. Shevaleevskiy p. 540 abstract

Effect of Electron Irradiation with an Energy of 0.9 MeV on the I–V Characteristics and Low-Frequency Noise in 4H–SiC pin Diodes

V. A. Dobrov, V. V. Kozlovski, A. V. Mescheryakov, V. G. Usychenko, A. S. Chernova, E. I. Shabunina and N. M. Shmidt p. 545 abstract

Fabrication, Treatment, and Testing of Materials and Structures

Electrical and Optical Characteristics of Si-Nanoparticle Films Deposited onto Substrates by High-Voltage Electrospraying from Ethanol Sols

N. N. Kononov, D. V. Davydova, S. S. Bubenov and S. G. Dorofeev p. 552 abstract

Optical and Structural Properties of Ag and c-Si Nanostructures Formed During the Metal-Assisted Chemical Etching of Silicon

Yu. A. Zharova, V. A. Tolmachev and S. I. Pavlov p. 566 abstract

Effect of Oxygen Flow Rate on Structural, Electrical and Optical Properties of Zinc Aluminum Oxide Thin Films Deposited by DC Magnetron Sputtering

B. Rajesh Kumar and B. Hymavathi p. 573 abstract

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