Vol. 50, No. 4, 2016

Semiconductors

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Electronic Properties of Semiconductors

Electronic Structure of Pt-Substituted Clathrate Silicides Ba₈Pt_xSi_{46 –} _x(x = 4–6)

N. A. Borshch p. 427 abstract

Dependence of Mobility on the Electron Concentration upon Scattering at Polar Optical Phonons in A–N Nitrides

S. I. Borisenko p. 432 abstract

Theory of the Anomalous Diffusion of Carriers in Disordered Organic Materials under Conditions of the CELIV Experiment

V. R. Nikitenko, M. M. Amrakulov and M. D. Khan p. 435 abstract

Specific Temperature-Related Features of Photoconductivity Relaxation in PbSnTe:In Films under Interband Excitation

A. N. Akimov, A. E. Klimov, I. G. Neizvestny, V. N. Shumsky and V. S. Epov p. 440 abstract

On the Thermoelectric Properties and Band Gap of Silicon–Germanium Alloys in the High-Temperature Region

P. N. Inglizian, V. K. Mikheyev, V. V. Novinkov and E. R. Shchedrov p. 447 abstract

Features of Photoinduced Magnetism in Some Yttrium–Iron-Garnet Single Crystals

N. V. Vorob’eva and V. B. Mityukhlyaev p. 449 abstract

Spectroscopy, Interaction with Radiation

Relaxation Oscillations of Superluminescence in a Semiconductor Caused by Recovery of the Fermi Distribution of Nonequilibrium Electrons

S. E. Kumekov, A. T. Mustafin and S. S. Mussatay p. 453 abstract

Surfaces, Interfaces, and Thin Films

Induced Surface States of the Ultrathin Ba/3C-SiC(111) Interface

G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, M. N. Lapushkin, B. V. Senkovskiy and S. N. Timoshnev p. 457 abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Impact Ionization in Nonuniformly Heated Silicon p⁺–n–n⁺ and n⁺–p–p⁺ Structures

A. M. Musaev p. 462 abstract

Sulfur Passivation of Semi-Insulating GaAs: Transition from Coulomb Blockade to Weak Localization Regime

N. T. Bagraev, E. I. Chaikina, E. Yu. Danilovskii, D. S. Gets, L. E. Klyachkin, T. V. L’vova and A. M. Malyarenko p. 466 abstract

Electric Field Effect on Lowest Excited-State Binding Energy of Hydrogenic Impurity in (In,Ga)N Parabolic Wire

Haddou El Ghazi and Anouar Jorio p. 478 abstract

Amorphous, Vitreous, and Organic Semiconductors

Gaussian Approximation of the Spectral Dependence of the Absorption Spectrum in Polymer Semiconductors

V. V. Malov, A. R. Tameev, S. V. Novikov, M. V. Khenkin, A. G. Kazanskii and A. V. Vannikov p. 482 abstract

“Dimensional” Effect due to the Matrix Isolation of Luminescent Composites of Polyphenylquinolines

E. L. Alexandrova, T. N. Nekrasova, R. Yu. Smyslov, N. V. Matyushina, L. A. Myagkova and V. M. Svetlichnyi p. 487 abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Polytype Inclusions and Polytype Stability in Silicon-Carbide Crystals

D. D. Avrov, A. O. Lebedev and Yu. M. Tairov p. 494 abstract

Carbon Systems

Prediction of the Stability and Electronic Properties of Carbon Nanotori Synthesized by a High-Voltage Pulsed Discharge in Ethanol Vapor

O. E. Glukhova, V. A. Kondrashov, V. K. Nevolin, I. I. Bobrinetsky, G. V. Savostyanov and M. M. Slepchenkov p. 502 abstract

Physics of Semiconductor Devices

Quantitative Analysis of Optical and Recombination Losses in Cu(In,Ga)Se₂ Thin-Film Solar Cells

L. A. Kosyachenko, V. Yu. Lytvynenko and O. L. Maslyanchuk p. 508 abstract

Heterostructures of Metamorphic GaInAs Photovoltaic Converters Fabricated by MOCVD on GaAs Substrates

S. A. Mintairov, V. M. Emelyanov, D. V. Rybalchenko, R. A. Salii, N. K. Timoshina, M. Z. Shvarts and N. A. Kalyuzhnyy p. 517 abstract

Simulation of the Real Efficiencies of High-Efficiency Silicon Solar Cells

A. V. Sachenko, A. I. Skrebtii, R. M. Korkishko, V. P. Kostylyov, N. R. Kulish and I. O. Sokolovskyi p. 523 abstract

On the Formation of Silicon Nanoclusters ncl-Si in a Hydrogenated Amorphous Silicon Suboxide Matrix a-SiO_x:H (0 < x < 2) with Time-Modulated dc Magnetron Plasma

Yu. K. Undalov, E. I. Terukov, O. B. Gusev and I. N. Trapeznikova p. 530 abstract

Fabrication, Treatment, and Testing of Materials and Structures

On a Reduction in Cracking upon the Growth of AlN on Si Substrates by Hydride Vapor-Phase Epitaxy

Sh. Sh. Sharofidinov, V. I. Nikolaev, A. N. Smirnov, A. V. Chikiryaka, I. P. Nikitina, M. A. Odnoblyudov, V. E. Bugrov and A. E. Romanov p. 541 abstract

Specific Features of Doping with Antimony during the Ion-Beam Crystallization of Silicon

A. S. Pashchenko, S. N. Chebotarev, L. S. Lunin and V. A. Irkha p. 545 abstract

Optical and Structural Properties of Cu₂ZnSnS₄ Thin Films Obtained by Pulsed Laser Deposition in a H₂S Atmosphere with Subsequent Annealing in a N₂ Atmosphere

G. D. Teterina, V. N. Nevolin, I. P. Sipaylo, S. S. Medvedeva and P. E. Teterin p. 549 abstract

Possibility of the Use of Intermediate Carbidsiliconoxide Nanolayers on Polydiamond Substrates for Gallium Nitride Layers Epitaxy

P. A. Averichkin, A. A. Donskov, M. P. Dukhnovsky, S. N. Knyazev, Yu. P. Kozlova, T. G. Yugova and I. A. Belogorokhov p. 555 abstract

Features of the Diagnostics of Metamorphic InAlAs/InGaAs/InAlAs Nanoheterostructures by High-Resolution X-Ray Diffraction in the ω-Scanning Mode

I. S. Vasil’evskii, S. S. Pushkarev, M. M. Grekhov, A. N. Vinichenko, D. V. Lavrukhin and O. S. Kolentsova p. 559 abstract

Contents