Contents
Semiconductors


Vol. 47, No. 4, 2013

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.


Electronic Properties of Semiconductors

Experimental Observation of Giant Zeeman Splitting of the Light-Hole Level
in a GaAs/AlGaAs Quantum Well

P. V. Petrov and Yu. L. Ivánov p. 455  abstract


Spectroscopy, Interaction with Radiation

Influence of Irradiation with -Ray Photons on the Photoluminescence
of Cd0.9Zn0.1Te Crystals Preliminarily Subjected to the Intense Radiation of a Neodymium Laser

K. D. Glinchuk, A. P. Medvid’, A. M. Mychko, Yu. M. Naseka,
A. V. Prokhorovich, and O. M. Strilchuk
p. 457  abstract

Study of Photomodulated Reflectance in 6H-SiC Single Crystals

A. N. Gruzintsev p. 464  abstract


Surfaces, Interfaces, and Thin Films

Relaxation-Induced Self-Organization of a Silicon Crystal Surface
under Microwave Plasma Micromachining

V. Ya. Shanygin and R. K. Yafarov p. 469  abstract


Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Thermal Evolution of the Morphology, Structure, and Optical Properties
of Multilayer Nanoperiodic Systems Produced by the Vacuum Evaporation of SiO and SiO2

A. V. Ershov, I. A. Chugrov, D. I. Tetelbaum, A. I. Mashin, D. A. Pavlov,
A. V. Nezhdanov, A. I. Bobrov, and D. A. Grachev
p. 481  abstract

Resonance Coulomb Scattering at Shallow Donors in AlGaAs/n-GaAs/AlGaAs Quantum Wells

V. Ya. Aleshkin and D. I. Burdeiny p. 487  abstract

Electrical Properties of Semiconductor Quantum Dots

V. F. Kharlamov, D. A. Korostelev, I. G. Bogoraz, O. A. Milovidova, and V. O. Sergeyev p. 494  abstract

Metastable States in InGaN/GaN MQW Structures Doped with Sm, Eu, and Eu + Sm

M. M. Mezdrogina and Yu. V. Kozhanova p. 501  abstract

Specific Features of the Field Generation of Minority Charge Carriers in Si–SiO2 Structures

A. P. Baraban, P. P. Konorov, V. A. Dmitriev, and V. A. Prokof’ev p. 511  abstract

Theory of Space-Charge-Limited Ballistic Currents in Nanostructures
of Different Dimensionalities

M. V. Beznogov and R. A. Suris p. 514  abstract

On the Electrically Detected Cyclotron Resonance of Holes in Silicon Nanostructures

N. T. Bagraev, D. S. Gets, E. Yu. Danilovsky, L. E. Klyachkin, and A. M. Malyarenko p. 525  abstract

Study of the Influence of Strained Superlattices Introduced into a Metamorphic Buffer
on the Electrophysical Properties and the Atomic Structure
of InAlAs/InGaAs MHEMT Heterostructures

G. B. Galiev, S. S. Pushkarev, I. S. Vasil’evskii, O. M. Zhigalina, E. A. Klimov,
V. G. Zhigalina, and R. M. Imamov
p.532  abstract


Physics of Semiconductor Devices

Field-Effect Transistor Based on ZnO Nanorods with a Variable Threshold Cutoff Voltage

A. N. Gruzintsev, A. N. Redkin, C. Opoku, and M. N. Shkunov p. 538  abstract

Voltage Dependence of the Differential Capacitance of a p+n Junction

N. A. Shekhovtsov p. 543  abstract


Fabrication, Treatment, and Testing of Materials and Structures

Study of the Morphology and Optical Properties of Anodic Oxide Layers on InAs (111)III

N. A. Valisheva, V. N. Kruchinin, O. E. Tereshchenko, A. S. Kozhukhov,
T. A. Levtsova, S. V. Rykhlitskiy, and D. V. Sheglov
p. 555  abstract

On the Behavior of Bi in a CdTe Lattice and the Compensation Effect in CdTe:Bi

S. A. Kolosov, V. S. Krivobok, Yu. V. Klevkov, and A. F. Adiyatullin p. 561  abstract

Structural and Optical Properties of Thin In2O3 Films Produced by Autowave Oxidation

I. A. Tambasov, V. G. Myagkov, A. A. Ivanenko, I. V. Nemtsev, L. E. Bykova,
G. N. Bondarenko, J. L. Mihlin, I. A. Maksimov, V. V. Ivanov,
S. V. Balashov, and D. S. Karpenko
p. 569  abstract

Study of the Characteristics of Photoresistors Based
on Hydrochemically Deposited Films of Pb0.902Sn0.098Se Solid Solution

H. N. Mukhamedzyanov, V. F. Markov, and L. N. Maskaeva p. 574  abstract

Application of the Transverse Acoustoelectric Effect
to Studying Silicon Surface Charging upon Water Adsorption

V. L. Gromashevskii, N. P. Tatyanenko, and B. A. Snopok p. 579  abstract

Synthesis and Characterization of Nanostructured Zinc Oxide Layers for Sensor Applications

L. K. Krasteva, D. Tz. Dimitrov, K. I. Papazova, N. K. Nikolaev, T. V. Peshkova,
V. A. Moshnikov, I. E. Gracheva, S. S. Karpova, and N. V. Kaneva
p.586  abstract


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