Contents
Semiconductors
Vol. 47, No. 4, 2013
A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.
Electronic Properties of Semiconductors
Experimental Observation of Giant Zeeman Splitting of the Light-Hole Level
in a GaAs/AlGaAs Quantum Well
P. V. Petrov and Yu. L. Ivánov p. 455 abstract
Spectroscopy, Interaction with Radiation
Influence of Irradiation with -Ray Photons on the Photoluminescence
of Cd0.9Zn0.1Te Crystals Preliminarily Subjected to the Intense Radiation of a Neodymium Laser
K. D. Glinchuk, A. P. Medvid, A. M. Mychko, Yu. M. Naseka,
A. V. Prokhorovich, and O. M. Strilchuk p. 457 abstract
Study of Photomodulated Reflectance in 6H-SiC Single Crystals
A. N. Gruzintsev p. 464 abstract
Surfaces, Interfaces, and Thin Films
Relaxation-Induced Self-Organization of a Silicon Crystal Surface
under Microwave Plasma Micromachining
V. Ya. Shanygin and R. K. Yafarov p. 469 abstract
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
Thermal Evolution of the Morphology, Structure, and Optical Properties
of Multilayer Nanoperiodic Systems Produced by the Vacuum Evaporation of SiO and SiO2
A. V. Ershov, I. A. Chugrov, D. I. Tetelbaum, A. I. Mashin, D. A. Pavlov,
A. V. Nezhdanov, A. I. Bobrov, and D. A. Grachev p. 481 abstract
Resonance Coulomb Scattering at Shallow Donors in AlGaAs/n-GaAs/AlGaAs Quantum Wells
V. Ya. Aleshkin and D. I. Burdeiny p. 487 abstract
Electrical Properties of Semiconductor Quantum Dots
V. F. Kharlamov, D. A. Korostelev, I. G. Bogoraz, O. A. Milovidova, and V. O. Sergeyev p. 494 abstract
Metastable States in InGaN/GaN MQW Structures Doped with Sm, Eu, and Eu + Sm
M. M. Mezdrogina and Yu. V. Kozhanova p. 501 abstract
Specific Features of the Field Generation of Minority Charge Carriers in SiSiO2 Structures
A. P. Baraban, P. P. Konorov, V. A. Dmitriev, and V. A. Prokofev p. 511 abstract
Theory of Space-Charge-Limited Ballistic Currents in Nanostructures
of Different Dimensionalities
M. V. Beznogov and R. A. Suris p. 514 abstract
On the Electrically Detected Cyclotron Resonance of Holes in Silicon Nanostructures
N. T. Bagraev, D. S. Gets, E. Yu. Danilovsky, L. E. Klyachkin, and A. M. Malyarenko p. 525 abstract
Study of the Influence of Strained Superlattices Introduced into a Metamorphic Buffer
on the Electrophysical Properties and the Atomic Structure
of InAlAs/InGaAs MHEMT Heterostructures
G. B. Galiev, S. S. Pushkarev, I. S. Vasilevskii, O. M. Zhigalina, E. A. Klimov,
V. G. Zhigalina, and R. M. Imamov p.532 abstract
Physics of Semiconductor Devices
Field-Effect Transistor Based on ZnO Nanorods with a Variable Threshold Cutoff Voltage
A. N. Gruzintsev, A. N. Redkin, C. Opoku, and M. N. Shkunov p. 538 abstract
Voltage Dependence of the Differential Capacitance of a p+n Junction
N. A. Shekhovtsov p. 543 abstract
Fabrication, Treatment, and Testing of Materials and Structures
Study of the Morphology and Optical Properties of Anodic Oxide Layers on InAs (111)III
N. A. Valisheva, V. N. Kruchinin, O. E. Tereshchenko, A. S. Kozhukhov,
T. A. Levtsova, S. V. Rykhlitskiy, and D. V. Sheglov p. 555 abstract
On the Behavior of Bi in a CdTe Lattice and the Compensation Effect in CdTe:Bi
S. A. Kolosov, V. S. Krivobok, Yu. V. Klevkov, and A. F. Adiyatullin p. 561 abstract
Structural and Optical Properties of Thin In2O3 Films Produced by Autowave Oxidation
I. A. Tambasov, V. G. Myagkov, A. A. Ivanenko, I. V. Nemtsev, L. E. Bykova,
G. N. Bondarenko, J. L. Mihlin, I. A. Maksimov, V. V. Ivanov,
S. V. Balashov, and D. S. Karpenko p. 569 abstract
Study of the Characteristics of Photoresistors Based
on Hydrochemically Deposited Films of Pb0.902Sn0.098Se Solid Solution
H. N. Mukhamedzyanov, V. F. Markov, and L. N. Maskaeva p. 574 abstract
Application of the Transverse Acoustoelectric Effect
to Studying Silicon Surface Charging upon Water Adsorption
V. L. Gromashevskii, N. P. Tatyanenko, and B. A. Snopok p. 579 abstract
Synthesis and Characterization of Nanostructured Zinc Oxide Layers for Sensor Applications
L. K. Krasteva, D. Tz. Dimitrov, K. I. Papazova, N. K. Nikolaev, T. V. Peshkova,
V. A. Moshnikov, I. E. Gracheva, S. S. Karpova, and N. V. Kaneva p.586 abstract
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