Contents
Semiconductors

Vol. 45, No. 4, 2011

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Valence Band Structure of Binary Chalcogenide Vitreous Semiconductors
by High-Resolution XPS

S. Kozyukhin, R. Golovchak, A. Kovalskiy, O. Shpotyuk, and H. Jain p. 423  abstract

States of Antimony and Tin Atoms in Lead Chalcogenides

G. A. Bordovsky, S. A. Nemov, A. V. Marchenko, A. V. Zaiceva,
M. Yu. Kozhokar, and P. P. Seregin p. 427  abstract

Study of Processes of Self-Catalyzed Growth of GaAs Crystal Nanowires
by Molecular-Beam Epitaxy on Modified Si (111) Surfaces

Yu. B. Samsonenko, G. E. Cirlin, A. I. Khrebtov, A. D. Bouravleuv, N. K. Polyakov,
V. P. Ulin, V. G. Dubrovskii, and P. Werner p. 431  abstract

Electronic Properties of Semiconductors

Minority-Charge-Carrier Mobility at Low Injection Level in Semiconductors

L. I. Pomortseva p. 436  abstract

Transmittance Spectra of the CuGa₃Se₅ Ternary Compound near
the Fundamental Absorption Edge

I. V. Bodnar p. 445  abstract

Galvanomagnetic Phenomena in a Longitudinal Autosoliton in p-InSb
in Transverse and Longitudinal Magnetic Fields

I. K. Kamilov, A. A. Stepurenko, and A. E. Gummetov p. 449  abstract

Spectroscopy, Interaction with Radiation

Modification of the Structural Lattice Parameters and Electron Spectra
of n-GaAs Films on Sapphire on Irradiation with Reactor Neutrons

V. N. Brudnyi, A. V. Kosobutsky, N. G. Kolin, and A. V. Korulin p. 454  abstract

Surfaces, Interfaces, and Thin Films

Surface-Barrier Structures on Single Crystals of CdMgMnTe Quaternary Solid Solutions:
Creation and Properties

V. Yu. Rud’, Yu. V. Rud’, and E. I. Terukov p. 461  abstract

A Model of Formation of Fixed Charge in Thermal Silicon Dioxide

O. V. Aleksandrov and A. I. Dus’ p. 467  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Percolation and Excitonic Luminescence in SiO₂/ZnO Two-Phase Structures
with a High Density of Quantum Dots Randomly Distributed over a Spherical Surface

N. V. Bondar p. 474  abstract

Effect of Silicon on Relaxation of the Crystal Lattice
in MOCVD–Hydride Al_xGa_1–xAs:Si/GaAs(100) Heterostructures

P. V. Seredin, A. V. Glotov, V. E. Ternovaya, E. P. Domashevskaya,
I. N. Arsentyev, D. A. Vinokurov, A. L. Stankevich, and I. S. Tarasov p.481  abstract

Amorphous, Vitreous, and Organic Semiconductors

Absorption and Spectra of Optical Parameters
in Amorphous Solid Solutions of the Se–S System

N. Z. Djalilov and G. M. Damirov p. 493  abstract

Impact of the Sample Thickness and -Irradiation Dose on the Occurrence
of Radiation-Induced Optical Effects in Chalcogenide Vitreous Semiconductors
of the Ge–Sb–S System

T. S. Kavetskyy p. 499  abstract

Conductivity Photoquenching Effect in Polymer–Ferrocene Composites

M. A. Kurbanov, G. Z. Suleymanov, N. A. Safarov, A. F. Gochuyeva,
I. N. Orujov, and Z. M. Mamedova p. 503  abstract

Specific Features of Photoelectric and Optical Properties
of Amorphous Hydrogenated Silicon Films Produced
by Plasmochemical Deposition from Monosilane–Hydrogen Mixture

A. G. Kazanskii, E. I. Terukov, P. A. Forsh, and M. V. Khenkin p. 510  abstract

Physics of Semiconductor Devices

GaAs–AlGaAs Heterostructure Thyristors
with Completely Optical Transfer of Emitter Current

V. G. Danil’chenko, V. I. Korol’kov, S. I. Ponomarev, and F. Yu. Soldatenkov p. 515  abstract

Laser Diodes with Several Emitting Regions ( = 800–1100 nm)
on the Basis of Epitaxially Integrated Heterostructures

A. A. Marmalyuk, E. I. Davydova, M. V. Zverkov, V. P. Konyaev, V. V. Krichevsky,
M. A. Ladugin, E. I. Lebedeva, S. V. Petrov, S. M. Sapozhnikov, V. A. Simakov,
M. B. Uspenskiy, I. V. Yarotskaya, N. A. Pikhtin, and I. S. Tarasov p. 519  abstract

Passivation of Infrared Photodiodes with Alcoholic Sulfide Solution

M. V. Lebedev, V. V. Sherstnev, E. V. Kunitsyna, I. A. Andreev, and Yu. P. Yakovlev p. 526  abstract

Semiconductor Lasers with Asymmetric Barrier Layers:
An Approach to High Temperature Stability

A. E. Zhukov, N. V. Kryzhanovskaya, M. V. Maximov, A. Yu. Egorov,
M. M. Pavlov, F. I. Zubov, and L. V. Asryan p. 530  abstract

Potential Distribution in Voltage Terminating Structures
with Floating p–n Junction Rings of Silicon Radiation Detectors

E. V. Verbitskaya, V. K. Eremin, N. N. Safonova, I. V. Eremin, Yu. V. Tuboltsev,
S. A. Golubkov, and K. A. Konkov p. 536  abstract

Spatial Nonuniformity of Current Flow and Its Consideration in Determination
of Characteristics of Surface Illuminated InAsSbP/InAs-Based Photodiodes

N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyy,
A. Yu. Rybal’chenko, and N. M. Stus’ p. 543  abstract

A Temperature-Stable Semiconductor Laser Based on Coupled Waveguides

A. V. Savelyev, I. I. Novikov, A. V. Chunareva, N. Yu. Gordeev, M. V. Maximov,
A. S. Payusov, E. M. Arakcheeva, V. A. Shchukin, and N. N. Ledentsov p. 550  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Vacuum Hydride Epitaxy of Silicon: Kinetics
of Monosilane Pyrolysis on the Growth Surface

L. K. Orlov and S. V. Ivin p.557  abstract

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