Contents
Semiconductors
Vol. 44, No. 4, 2010
A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.
Atomic Structure and Nonelectronic Propertties of Semiconductors
Numerical Simulation of Hydrogenation of GaAs at the Cooling Stage
V. A. Kagadei and E. V. Nefyodtsev p. 413 abstract
Electrical and Optical Properties of Semiconductors
Influence of the Defect Structure of -La2(1x)Nd2xS3 Crystals
on Their Spectroscopic Properties
A. A. Mamedov p. 421 abstract
The Effect of Fe, Cu, and Si Impurities on the Formation
of Emission Spectra in Bulk ZnO Crystals
M. M. Mezdrogina, E. Yu. Danilevskii, R. V. Kuzmin, N. K. Poletaev, I. N. Trapeznikova,
M. V. Chukichev, G. A. Bordovskii, A. V. Marchenko, and M. V. Eremenko p. 426 abstract
1.51.6 m Photoluminescence of Silicon Layers with a High Density of Lattice Defects
A. A. Shklyaev, A. V. Latyshev, and M. Ichikawa p. 432 abstract
Features of Self-Activated Luminescence Spectra of CdS:O
in the Context of Band Anticrossing Theory
N. K. Morozova and N. D. Danilevich p. 438 abstract
Optical Absorption and Diffusion of Iron in ZnSe Single Crystals
Yu. F. Vaksman, Yu. A. Nitsuk, V. V. Yatsun, A. S. Nasibov, and P. V. Shapkin p. 444 abstract
Semiconductor Structures, Interfaces, and Surfaces
Radiation Damage of Contact Structures with Diffusion Barriers Exposed
to Irradiation with 60Co -Ray Photons
A. E. Belyaev, N. S. Boltovets, R. V. Konakova, V. V. Milenin,
Yu. N. Sveshnikov, and V. N. Sheremet p. 448 abstract
Stimulated Radiation at a Wavelength of 2.5 m at Room Temperature
from Optically Excited CdxHg1xTe-Based Structures
A. A. Andronov, Yu. N. Nozdrin, A. V. Okomelkov, V. S. Varavin,
N. N. Mikhailov, and G. Yu. Sidorov p. 457 abstract
Current Flow Mechanism in Ohmic Contact to n-4H-SiC
T. V. Blank, Yu. A. Goldberg, E. A. Posse, and F. Yu. Soldatenkov p. 463 abstract
Low-Dimensional Systems
Specific Features of Erbium Ion Photoluminescence in Structures
with Amorphous and Crystalline Silicon Nanoclusters in Silica Matrix
S. A. Dyakov, D. M. Zhigunov, and V. Yu. Timoshenko p. 467 abstract
Mixed Conduction in Doped Semiconductor Structures Related
to Quasi-Metallic Conduction in the Impurity Band
N. V. Agrinskaya, V. I. Kozub, and D. S. Poloskin 472
The Sharply Nonlinear CurrentVoltage Characteristic of a Structure
with a Quantum Well Built in the Depletion Region of a Schottky Barrier
A. M. Korol and I. V. Nosenko p. 478 abstract
Ordered Arrays of Si Nanocrystals in SiO2: Structural, Optical, and Electronic Properties
I. V. Antonova, V. A. Skuratov, J. Jedrzejewski, and I. Balberg p. 482 abstract
Exciton Binding Energy in Semiconductor Quantum Dots
S. I. Pokutnii p. 488 abstract
Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites
Photoconductivity of Two-Phase Hydrogenated Silicon Films
A. G. Kazanskii, E. I. Terukov, P. A. Forsh, and J. P. Kleider p. 494 abstract
Physics of Semiconductor Devices
Characteristics of Surface States at the InsulatorSemiconductor Interface
in the Thin-Film Electroluminescent Structures Based on ZnS:Mn
N. T. Gurin, O. Yu. Sabitov, and A. M. Afanasev p. 498 abstract
Physical Model of MOS Structure Aging
M. A. Bulusheva, V. D. Popov, G. A. Protopopov, and A. V. Skorodumova p. 508 abstract
Fabrication, Treatment, and Testing of Materials and Structures
Effect of Low-Temperature Annealing on Photoluminescence
of Silicon Nanocluster Structures
B. N. Romanyuk, V. P. Melnik, V. G. Popov, I. M. Khatsevich, and A. S. Oberemok p. 514 abstract
Study of the Transition of the Epitaxial Ge Film from Layer-to-Layer
to Three-Dimensional Growth in Heterostructures with Strained SiGe Sublayers
Yu. N. Drozdov, A. V. Novikov, M. V. Shaleev, and D. V. Yurasov p. 519 abstract
Light-Emitting Si Nanostructures Formed in SiO2 on Irradiation with Swift Heavy Ions
G. A. Kachurin, S. G. Cherkova, V. A. Skuratov, D. V. Marin, and A. G. Cherkov p. 525 abstract
X-Ray and Infrared Spectroscopy of Layers Produced by Cosputtering
of Spatially Separated SiO2 and Si Sources
S. N. Shamin, V. R. Galakhov, V. I. Aksenova, A. N. Karpov, N. L. Shvartz,
Z. Sh. Yanovitskaya, V. A. Volodin, I. V. Antonova, T. B. Ezhevskaya,
J. Jedrzejewski, E. Savir, and I. Balberg p. 531 abstract
Influence of the Energy Parameters of the Deposited Laser-Induced Flow
of Platinum Atoms on Characteristics of a Pt/n-6H-SiC Thin-Film Structure
V. Yu. Fominskii, R. I. Romanov, A. G. Gnedovets, V. V. Zuev, and M. V. Demin p. 537 abstract
Deposition of Thin Bi2Te3 and Sb2Te3 Films by Pulsed Laser Ablation
I. S. Virt, T. P. Shkumbatyuk, I. V. Kurilo, I. O. Rudyi, T. Ye. Lopatinskyi,
L. F. Linnik, V. V. Tetyorkin, and A. G. Phedorov p.544 abstract
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