Contents
Semiconductors

Vol. 44, No. 4, 2010

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Propertties of Semiconductors

Numerical Simulation of Hydrogenation of GaAs at the Cooling Stage

V. A. Kagadei and E. V. Nefyodtsev p. 413  abstract

Electrical and Optical Properties of Semiconductors

Influence of the Defect Structure of -La_2(1–x)Nd_2xS₃ Crystals
on Their Spectroscopic Properties

A. A. Mamedov p. 421  abstract

The Effect of Fe, Cu, and Si Impurities on the Formation
of Emission Spectra in Bulk ZnO Crystals

M. M. Mezdrogina, E. Yu. Danilevskii, R. V. Kuz’min, N. K. Poletaev, I. N. Trapeznikova,
M. V. Chukichev, G. A. Bordovskii, A. V. Marchenko, and M. V. Eremenko p. 426  abstract

1.5–1.6 m Photoluminescence of Silicon Layers with a High Density of Lattice Defects

A. A. Shklyaev, A. V. Latyshev, and M. Ichikawa p. 432  abstract

Features of Self-Activated Luminescence Spectra of CdS:O
in the Context of Band Anticrossing Theory

N. K. Morozova and N. D. Danilevich p. 438  abstract

Optical Absorption and Diffusion of Iron in ZnSe Single Crystals

Yu. F. Vaksman, Yu. A. Nitsuk, V. V. Yatsun, A. S. Nasibov, and P. V. Shapkin p. 444  abstract

Semiconductor Structures, Interfaces, and Surfaces

Radiation Damage of Contact Structures with Diffusion Barriers Exposed
to Irradiation with ⁶⁰Co -Ray Photons

A. E. Belyaev, N. S. Boltovets, R. V. Konakova, V. V. Milenin,
Yu. N. Sveshnikov, and V. N. Sheremet p. 448  abstract

Stimulated Radiation at a Wavelength of 2.5 m at Room Temperature
from Optically Excited Cd_xHg_1–xTe-Based Structures

A. A. Andronov, Yu. N. Nozdrin, A. V. Okomel’kov, V. S. Varavin,
N. N. Mikhailov, and G. Yu. Sidorov p. 457  abstract

Current Flow Mechanism in Ohmic Contact to n-4H-SiC

T. V. Blank, Yu. A. Goldberg, E. A. Posse, and F. Yu. Soldatenkov p. 463  abstract

Low-Dimensional Systems

Specific Features of Erbium Ion Photoluminescence in Structures
with Amorphous and Crystalline Silicon Nanoclusters in Silica Matrix

S. A. Dyakov, D. M. Zhigunov, and V. Yu. Timoshenko p. 467  abstract

Mixed Conduction in Doped Semiconductor Structures Related
to Quasi-Metallic Conduction in the Impurity Band

N. V. Agrinskaya, V. I. Kozub, and D. S. Poloskin 472

The Sharply Nonlinear Current–Voltage Characteristic of a Structure
with a Quantum Well Built in the Depletion Region of a Schottky Barrier

A. M. Korol and I. V. Nosenko p. 478  abstract

Ordered Arrays of Si Nanocrystals in SiO₂: Structural, Optical, and Electronic Properties

I. V. Antonova, V. A. Skuratov, J. Jedrzejewski, and I. Balberg p. 482  abstract

Exciton Binding Energy in Semiconductor Quantum Dots

S. I. Pokutnii p. 488  abstract

Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites

Photoconductivity of Two-Phase Hydrogenated Silicon Films

A. G. Kazanskii, E. I. Terukov, P. A. Forsh, and J. P. Kleider p. 494  abstract

Physics of Semiconductor Devices

Characteristics of Surface States at the Insulator–Semiconductor Interface
in the Thin-Film Electroluminescent Structures Based on ZnS:Mn

N. T. Gurin, O. Yu. Sabitov, and A. M. Afanas’ev p. 498  abstract

Physical Model of MOS Structure Aging

M. A. Bulusheva, V. D. Popov, G. A. Protopopov, and A. V. Skorodumova p. 508  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Effect of Low-Temperature Annealing on Photoluminescence
of Silicon Nanocluster Structures

B. N. Romanyuk, V. P. Melnik, V. G. Popov, I. M. Khatsevich, and A. S. Oberemok p. 514  abstract

Study of the Transition of the Epitaxial Ge Film from Layer-to-Layer
to Three-Dimensional Growth in Heterostructures with Strained SiGe Sublayers

Yu. N. Drozdov, A. V. Novikov, M. V. Shaleev, and D. V. Yurasov p. 519  abstract

Light-Emitting Si Nanostructures Formed in SiO₂ on Irradiation with Swift Heavy Ions

G. A. Kachurin, S. G. Cherkova, V. A. Skuratov, D. V. Marin, and A. G. Cherkov p. 525  abstract

X-Ray and Infrared Spectroscopy of Layers Produced by Cosputtering
of Spatially Separated SiO₂ and Si Sources

S. N. Shamin, V. R. Galakhov, V. I. Aksenova, A. N. Karpov, N. L. Shvartz,
Z. Sh. Yanovitskaya, V. A. Volodin, I. V. Antonova, T. B. Ezhevskaya,
J. Jedrzejewski, E. Savir, and I. Balberg p. 531  abstract

Influence of the Energy Parameters of the Deposited Laser-Induced Flow
of Platinum Atoms on Characteristics of a Pt/n-6H-SiC Thin-Film Structure

V. Yu. Fominskii, R. I. Romanov, A. G. Gnedovets, V. V. Zuev, and M. V. Demin p. 537  abstract

Deposition of Thin Bi₂Te₃ and Sb₂Te₃ Films by Pulsed Laser Ablation

I. S. Virt, T. P. Shkumbatyuk, I. V. Kurilo, I. O. Rudyi, T. Ye. Lopatinskyi,
L. F. Linnik, V. V. Tetyorkin, and A. G. Phedorov p.544  abstract

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