m of Quantum Dots with an Increased Effective Thickness of the InAs Layer
Contents
Semiconductors
Vol. 42, No. 3, 2008
Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.
Atomic Structure and Nonelectronic Properties of Semiconductors
On the Modes of Evaporation of Si and Dopants in Vacuum Epitaxy Procedures
V. P. Kuznetsov, N. A. Alyabina, V. A. Bozhenkin, O. V. Belova, and M. V. Kuznetsov p. 251 abstract
Simulation of Near-Surface Proton-Stimulated Diffusion of Boron in Silicon
O. V. Aleksandrov and V. V. Kozlovski p. 257 abstract
Electronic and Optical Properties of Semiconductors
Electrical Properties of FeIn2Se4 Layered Single Crystals for Alternating Current
N. N. Niftiev, O. B. Tagiev, and M. B. Muradov p. 263 abstract
Features of Manifestation of Acceptor State of Gold in Silicon with Quenched-in Donors
A. D. Kiryukhin†, V. V. Grigor’ev, A. V. Zuev, and V. V. Zuev p. 266 abstract
Effect of Iodine Impurity on Relaxation of Photoexcited Silver Chloride
Yu. V. Vostrikova and V. G. Klyuev p. 272 abstract
Effect of Ultrasonic Treatment on Photoelectric and Luminescent Properties of ZnSe Crystals
E. M. Zobov, M. E. Zobov, F. S. Gabibov, I. K. Kamilov, F. I. Manyakhin, and E. K. Naimi p. 277 abstract
Semiconductor Structures, Interfaces, and Surfaces
Effect of Melting on the Acoustic Response of CdTe
and GaAs Subjected to the Pulsed Laser Irradiation
A. Baidullaeva, V. P. Veleshchuk, A. I. Vlasenko, B. K. Dauletmuratov,
O. V. Lyashenko, and P. E. Mozol’ p. 281 abstract
Low-Dimensional Systems
Comparative Analysis of Photoluminescence and Electroluminescence
of Multilayer Structures with Self-Assembled Ge(Si)/Si(001) Islands
Yu. N. Drozdov, Z. F. Krasilnik, K. E. Kudryavtsev, D. N. Lobanov, A. V. Novikov,
M. V. Shaleev, D. V. Shengurov, V. B. Shmagin, and A. N. Yablonskiy p. 286 abstract
The Role of Transport Processes of Nonequilibrium Charge Carriers
in Radiative Properties of Arrays of InAs/GaAs Quantum Dots
A. S. Shkolnik, A. V. Savelyev, L. Ya. Karachinsky, N. Yu. Gordeev, R. P. Seisyan,
G. G. Zegrya, S. Pellegrini, G. S. Buller, and V. P. Evtikhiev p. 291 abstract
Photoluminescence up to 1.6 m of Quantum Dots
with an Increased Effective Thickness of the InAs Layer
M. N. Drozdov, N. V. Vostokov, V. M. Danil’tsev, Yu. N. Drozdov,
L. D. Moldavskaya, A. V. Murel’, and V. I. Shashkin p. 298 abstract
Wannier–Stark Effect in Ge/Si Quantum Dot Superlattices
M. M. Sobolev, G. É. Cirlin, A. A. Tonkikh, and N. D. Zakharov p. 305 abstract
Optical Orientation of Holes in Strained Nanostructures
N. S. Averkiev and N. I. Sablina p. 310 abstract
Polarization-Resolved Photoluminescence Piezospectroscopy
of GaAs/Al0.35Ga0.65As:Be Quantum Wells
N. S. Averkiev, Yu. L. Ivanov, A. A. Krasivichev, P. V. Petrov,
N. I. Sablina, and V. E. Sedov p. 316 abstract
Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites
Photoluminescence in Semiconductor Structures Based
on Butyl-Substituted Erbium Phthalocyanine Complexes
I. A. Belogorokhov, Yu. V. Ryabchikov, E. V. Tikhonov, V. E. Pushkarev,
M. O. Breusova, L. G. Tomilova, and D. R. Khokhlov p. 321 abstract
Platinum Nanoclusters Encapsulated in Amorphous Carbon
T. K. Zvonareva, A. A. Sitnikova, G. S. Frolova, and V. I. Ivanov-Omskip. 325 abstract
Physics of Semiconductor Devices
Silicon Light-Emitting Diodes with Strong Near-Band-Edge Luminescence
A. M. Emel’yanov and N. A. Sobolev p. 329 abstract
Mechanism of Formation of the Response
of a Hydrogen Gas Sensor Based on a Silicon MOS Diode
V. I. Gaman, V. I. Balyuba, V. Yu. Gritsyk, T. A. Davydova, and V. M. Kalygina p. 334 abstract
Mechanisms of Rectification of a High-Frequency Signal
by a Field-Effect Heterotransistor with a Short Channel
M. L. Orlov p. 339 abstract
Electrical Properties of the InP/InGaAs pnp Heterostructure–Emitter Bipolar Transistor
J. H. Tsai, W. Ch. Liu, D. F. Guo, Y. Ch. Kang, Sh. Y. Chiu, and W. Sh. Lour p. 346 abstract
High-Power Laser Diodes of Wavelength 808 nm Based
on Various Types of Asymmetric Heterostructures with an Ultrawide Waveguide
V. V. Bezotosny, V. V. Vasil’eva, D. A. Vinokurov, V. A. Kapitonov, O. N. Krokhin,
A. Yu. Leshko, A. V. Lyutetski, A. V. Murashova, T. A. Nalet, D. N. Nikolaev,
N. A. Pikhtin, Yu. M. Popov, S. O. Slipchenko, A. L. Stankevich, N. V. Fetisova,
V. V. Shamakhov, and I. S. Tarasov p. 350 abstract
Efficient Generation of the First Waveguide Mode in the InGaAs/GaAs/InGaP Heterolaser
A. A. Biryukov, B. N. Zvonkov, S. M. Nekorkin, V. Ya. Aleshkin,
A. A. Dubinov, V. V. Kocharovski, and Vl. V. Kocharovski
p. 354 abstract
Luminescence Properties of Light-Emitting Diodes Based on GaAs
with the Up-Conversion Y2O2S:Er,Yb Luminophor
A. N. Gruzintsev, C. Barthou, and P. Benalloul p. 358 abstract
Effect of Electron and Proton Irradiation on Characteristics
of SiC Surface-Barrier Detectors of Nuclear Radiation
A. M. Ivanov, N. B. Strokan, V. V. Kozlovski, and A. A. Lebedev p. 363 abstract
Fabrication, Treatment, and Testing of Materials and Structures
Effect of the State of Vacancy Equilibrium on Diffusion
of Chromium Impurity in Gallium Arsenide
S. S. Khludkov p. 370 abstract
Pleiades Publishing home page | journal home page | top
If you have any problems with this server, contact webmaster.