Contents
Semiconductors
Vol. 41, No. 3, 2007
Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.
Review
Negative Luminescence and Devices Based on This Phenomenon
V. I. Ivanov-Omskii and B. A. Matveev p. 247 abstract
Electronic and Optical Properties of Semiconductors
The Shape of the Signals of Transient Photoconductivity in Silicon Doped with Gold or Sulfur
A. D. Kiryukhin, V. V. Grigorev, A. V. Zuev, V. V. Zuev, and N. A. Korolev p. 259 abstract
A Study of Thick 3C-SiC Epitaxial Layers Grown on 6H-SiC Substrates
by Sublimation Epitaxy in Vacuum
A. A. Lebedev, V. V. Zelenin, P. L. Abramov, E. V. Bogdanova, S. P. Lebedev, D. K. Nelson,
B. S. Razbirin, M. P. Shcheglov, A. S. Tregubova, M. Suvajarvi, and R. Yakimova p. 263 abstract
The Band Structure and the Double MetalInsulatorMetal Phase Transition
in the Conductivity of Elastically Strained Zero-Gap CdxHg1xTe
E. F. Venger, S. G. Gasan-zade, M. V. Strikha, and G. A. Shepelskip. 266 abstract
Effect of Energy-Band Bending on the Thermopower in Bipolar Semiconductors
A. Konin p. 272 abstract
Longitudinal Autosoliton Motion Across p-InSb in a Transverse Magnetic Field
I. K. Kamilov, A. A. Stepurenko, A. E. Gummetov, and A. S. Kovalev p. 277 abstract
Quadratic Recombination in Silicon and Its Influence on the Bulk Lifetime
A. V. Sachenko, A. P. Gorban, V. P. Kostylev, and I. O. Sokolovskip. 281 abstract
Dislocation-Related Luminescence in Silicon, Caused by Implantation
of Oxygen Ions and Subsequent Annealing
N. A. Sobolev, B. Ya. Ber, A. M. Emelyanov, A. P. Kovarski, and E. I. Shek p. 285 abstract
Semiconductor Structures, Interfaces, and Surfaces
Electrical Properties of n-ZnO/p-CuO Heterostructures
B. M. Vermenichev, O. L. Lisitski, M. E. Kumekov, S. E. Kumekov,
E. I. Terukov, and S. Zh. Tokmoldin p. 288 abstract
Behavior of Germanium Ion-implanted into SiO2 Near the Bonding Interface
of a Silicon-on-Insulator Structure
I. E. Tyschenko, M. Voelskow, A. G. Cherkov, and V. P. Popov p. 291 abstract
Role of Spontaneous Polarization in Formation of Heterojunctions
from Silicon Carbide Polytypes
S. Yu. Davydov, A. A. Lebedev, and A. V. Troshin p. 297 abstract
Effect of the Buffer Layer of GaSe Intrinsic Oxide with Nanometer Thickness
on Electrical, Photoelectric, and Emissive Properties of ITOGaSe Heterostructures
S. I. Drapak and Z. D. Kovalyuk p. 301 abstract
Low-Dimensional Systems
Special Features of the Fourier Spectra of Magnetoresistance Oscillations
in a Heavily Doped Heterostructure
V. I. Kadushkin p. 307 abstract
A Mathematical Simulation of the Effect of the Bistability of Current Characteristics
in Nanosized Multiple-Layer Heavily Doped Heterostructures
V. A. Gergel, A. P. Zelenyi, and M. N. Yakupov p. 314 abstract
Characterization of InxGa1xAs/GaAs Quantum-Well Heterostructures by CV Measurements:
Band Offsets, Quantum-Confinement Levels, and Wave Functions
V. I. Zubkov p. 320 abstract
Resonance Modulation of the Intersubband ElectronElectron Interaction
in an AlSb(-Te)/InAs/AsSb(
-Te) Quantum Well by Magnetic Field
V. I. Kadushkin, Yu. G. Sadofev, J. P. Bird, S. R. Johnson, and Y.-H. Zhang p. 327 abstract
Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites
Fractional Differential Kinetics of Charge Transport in Unordered Semiconductors
R. T. Sibatov and V. V. Uchaikin p. 335 abstract
Structure and Electrical Properties of Polycrystalline SiGe Films Grown
by Molecular Beam Deposition
I. B. Chistokhin, A. K. Gutakovski, and A. S. Deryabin p. 341 abstract
Physics of Semiconductor Devices
The Effect of Irradiation with High-Energy Protons on 4H-SiC Detectors
V. Kaukauskas, R. Jasiulionis, V. Kalendra, and J.-V. Vaitkus p. 345 abstract
Measurement and Comparison of Complex Impedance
of Silicon pin Photodiodes at Different Temperatures
H. Bayhan and S. Ozden p. 353 abstract
Increase in the Electron Mobility in the Inversion Channel of a Si-MOS Transistor
in the Case of Ion Polarization of the Gate Oxide
Yu. V. Gulyaev, A. G. Zhdan, and G. V. Chucheva p. 357 abstract
Nonlinear-Optical Effects in Semiconductor Lasers Based
on InGaAs/GaAs/AlGaAs Quantum-Confinement Heterostructures
N. S. Averkiev, S. O. Slipchenko, Z. N. Sokolova, N. A. Pikhtin, and I. S. Tarasov p. 361 abstract
Personalia
Aleksandr Leonidovich Aseev (On the 60th Anniversary of His Birth) p. 365
Conference
VIII Russian Conference on the Physics of Semiconductors p. 367
Information for Authors p. 369
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