Contents
Semiconductors

Vol. 41, No. 3, 2007

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Review

Negative Luminescence and Devices Based on This Phenomenon

V. I. Ivanov-Omskii and B. A. Matveev p. 247  abstract

Electronic and Optical Properties of Semiconductors

The Shape of the Signals of Transient Photoconductivity in Silicon Doped with Gold or Sulfur

A. D. Kiryukhin^†, V. V. Grigor’ev, A. V. Zuev, V. V. Zuev, and N. A. Korolev p. 259  abstract

A Study of Thick 3C-SiC Epitaxial Layers Grown on 6H-SiC Substrates
by Sublimation Epitaxy in Vacuum

A. A. Lebedev, V. V. Zelenin, P. L. Abramov, E. V. Bogdanova, S. P. Lebedev, D. K. Nel’son,
B. S. Razbirin, M. P. Shcheglov, A. S. Tregubova, M. Suvajarvi, and R. Yakimova p. 263  abstract

The Band Structure and the Double Metal–Insulator–Metal Phase Transition
in the Conductivity of Elastically Strained Zero-Gap Cd_xHg_1–xTe

E. F. Venger, S. G. Gasan-zade, M. V. Strikha, and G. A. Shepelski p. 266  abstract

Effect of Energy-Band Bending on the Thermopower in Bipolar Semiconductors

A. Konin p. 272  abstract

Longitudinal Autosoliton Motion Across p-InSb in a Transverse Magnetic Field

I. K. Kamilov, A. A. Stepurenko, A. E. Gummetov, and A. S. Kovalev p. 277  abstract

Quadratic Recombination in Silicon and Its Influence on the Bulk Lifetime

A. V. Sachenko, A. P. Gorban, V. P. Kostylev, and I. O. Sokolovski p. 281  abstract

Dislocation-Related Luminescence in Silicon, Caused by Implantation
of Oxygen Ions and Subsequent Annealing

N. A. Sobolev, B. Ya. Ber, A. M. Emel’yanov, A. P. Kovarski, and E. I. Shek p. 285  abstract

Semiconductor Structures, Interfaces, and Surfaces

Electrical Properties of n-ZnO/p-CuO Heterostructures

B. M. Vermenichev, O. L. Lisitski, M. E. Kumekov, S. E. Kumekov,
E. I. Terukov, and S. Zh. Tokmoldin p. 288  abstract

Behavior of Germanium Ion-implanted into SiO₂ Near the Bonding Interface
of a Silicon-on-Insulator Structure

I. E. Tyschenko, M. Voelskow, A. G. Cherkov, and V. P. Popov p. 291  abstract

Role of Spontaneous Polarization in Formation of Heterojunctions
from Silicon Carbide Polytypes

S. Yu. Davydov, A. A. Lebedev, and A. V. Troshin p. 297  abstract

Effect of the Buffer Layer of GaSe Intrinsic Oxide with Nanometer Thickness
on Electrical, Photoelectric, and Emissive Properties of ITO–GaSe Heterostructures

S. I. Drapak and Z. D. Kovalyuk p. 301  abstract

Low-Dimensional Systems

Special Features of the Fourier Spectra of Magnetoresistance Oscillations
in a Heavily Doped Heterostructure

V. I. Kadushkin p. 307  abstract

A Mathematical Simulation of the Effect of the Bistability of Current Characteristics
in Nanosized Multiple-Layer Heavily Doped Heterostructures

V. A. Gergel’, A. P. Zelenyi, and M. N. Yakupov p. 314  abstract

Characterization of In_xGa_1–xAs/GaAs Quantum-Well Heterostructures by C–V Measurements:
Band Offsets, Quantum-Confinement Levels, and Wave Functions

V. I. Zubkov p. 320  abstract

Resonance Modulation of the Intersubband Electron–Electron Interaction
in an AlSb(-Te)/InAs/AsSb(-Te) Quantum Well by Magnetic Field

V. I. Kadushkin, Yu. G. Sadof’ev, J. P. Bird, S. R. Johnson, and Y.-H. Zhang p. 327  abstract

Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites

Fractional Differential Kinetics of Charge Transport in Unordered Semiconductors

R. T. Sibatov and V. V. Uchaikin p. 335  abstract

Structure and Electrical Properties of Polycrystalline SiGe Films Grown
by Molecular Beam Deposition

I. B. Chistokhin, A. K. Gutakovski, and A. S. Deryabin p. 341  abstract

Physics of Semiconductor Devices

The Effect of Irradiation with High-Energy Protons on 4H-SiC Detectors

V. Kaukauskas, R. Jasiulionis, V. Kalendra, and J.-V. Vaitkus p. 345  abstract

Measurement and Comparison of Complex Impedance
of Silicon p–i–n Photodiodes at Different Temperatures

H. Bayhan and S. Ozden p. 353  abstract

Increase in the Electron Mobility in the Inversion Channel of a Si-MOS Transistor
in the Case of Ion Polarization of the Gate Oxide

Yu. V. Gulyaev, A. G. Zhdan, and G. V. Chucheva p. 357  abstract

Nonlinear-Optical Effects in Semiconductor Lasers Based
on InGaAs/GaAs/AlGaAs Quantum-Confinement Heterostructures

N. S. Averkiev, S. O. Slipchenko, Z. N. Sokolova, N. A. Pikhtin, and I. S. Tarasov p. 361  abstract

Personalia

Aleksandr Leonidovich Aseev (On the 60th Anniversary of His Birth) p. 365

Conference

VIII Russian Conference on the Physics of Semiconductors p. 367

Information for Authors p. 369

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