Contents
Semiconductors

Vol. 39, No. 3, 2005

Simultaneous English language translation of the journal is available from Pleiades Publishing, Inc.
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Cationic Disorder in an Sr₂FeMoO₆ Binary Oxide with a Perovskite Structure

L. S. Lobanovski, S. V. Trukhanov, M. V. Bushinski, and I. O. Troyanchuk p. 273  abstract

A Vacancy Model of the Heteropolytype Epitaxy of SiC

A. A. Lebedev and S. Yu. Davydov p. 277  abstract

Internal Friction in Semiconductor Thin Films Grown Using Sol–Gel Technology

A. S. Il’in, A. I. Maksimov, V. A. Moshnikov, and N. P. Yaroslavtsev p. 281  abstract

Electronic and Optical Properties of Semiconductors

Reflection Spectra of Two Polymorphic Modifications of Cadmium Arsenide

A. I. Kozlov, V. V. Sobolev, and A. F. Knjazev p. 285  abstract

Statistics of Electrons in PbS with U Centers

S. A. Nemov, F. S. Nasredinov, P. P. Seregin, N. P. Seregin, and E. S. Khuzhakulov p. 289  abstract

The Accumulation of Radiation Defects in Gallium Arsenide That Has Been Subjected
to Pulsed and Continuous Ion Implantation

M. V. Ardyshev, V. M. Ardyshev, and Yu. Yu. Kryuchkov p. 293  abstract

The Effect of Pressing on the Luminescent Properties of ZnS:Ga Powders

Yu. Yu. Bacherikov, N. V. Kitsyuk, S. V. Optasyuk, and A. A. Stadnik p. 296  abstract

Spectroscopic Parameters of the Absorption Bands Related to the Local Vibrational Modes
of Carbon and Oxygen Impurities in Silicon Enriched with ²⁸Si, ²⁹Si, and ³⁰Si Isotopes

P. G. Sennikov, T. V. Kotereva, A. G. Kurganov, B. A. Andreev, H. Niemann,
D. Schiel, V. V. Emtsev, and H.-J. Pohl p. 300  abstract

The Effect of Tellurium Diffusion from an n-GaSb:Te Substrate on the Properties
of GaInAsSb Solid Solutions Grown from Lead-Containing Melt

T. I. Voronina, T. S. Lagunova, A. F. Lipaev, E. V. Kunitsyna, Ya. A. Parkhomenko,
M. A. Sipovskaya, and Yu. P. Yakovlev p. 308  abstract

Semiconductor Structures, Interfaces, and Surfaces

Depolarization in a Metal–p-Ferroelectric–n-Semiconductor Structure

L. S. Berman p. 313  abstract

A Model for Describing Hole Scattering at GaAs/AlAs(001) Heterointerfaces

G. F. Karavaev and V. N. Chernyshov p. 317  abstract

A Quasi-Classical Description of the Conductivity Oscillations in Layered Crystals Under
the Condition of Charge-Carrier Scattering by Acoustic Phonons

P. V. Gorski p. 325  abstract

The Charge-Transport Mechanisms and Photosensitivity of n-ZnO:Al/CuPc/p-Cu(In,Ga)Se₂ Structures

G. A. Il’chuk, S. E. Nikitin, Yu. A. Nikolaev, V. Yu. Rud’, Yu. V. Rud’, and E. I. Terukov p. 331  abstract

Vegard’s Law and Superstructural Phases in Al_xGa_1–xAs/GaAs(100) Epitaxial Heterostructures

É. P. Domashevskaya, P. V. Seredin, É. A. Dolgopolova, I. E. Zanin,
I. N. Arsent’ev, D. A. Vinokurov, A. L. Stankevich, and I. S. Tarasov p. 336  abstract

Amorphous, Vitreous, and Porous Semiconductors

Atmospheric Adsorption Effects in Hot-Wire Chemical-Vapor-Deposition Microcrystalline Silicon Films
with Different Electrode Configurations

S. K. Persheyev, V. Smirnov, K. A. O’Neill, S. Reynolds, and M. J. Rose p. 343  abstract

The Role of Boron Impurity in the Activation of Free Charge Carriers in Layers
of Porous Silicon during the Adsorption of Acceptor Molecules

L. A. Osminkina, E. A. Konstantinova, K. S. Sharov, P. K. Kashkarov, and V. Yu. Timoshenko p. 347  abstract

The Density of States in the Mobility Gap of Amorphous Hydrogenated Silicon Doped with Erbium

A. V. Biryukov, A. G. Kazanski, E. I. Terukov, and K. Yu. Khabarova p. 351  abstract

Physics of Semiconductor Devices

A New Physical Mechanism for the Formation of Critical Turn-On Charge in Thyristor Structures

T. T. Mnatsakanov, S. N. Yurkov, and A. G. Tandoev p. 354  abstract

A Method for Measuring the Lifetime of Charge Carriers in the Base Regions
of High-Speed Diode Structures

V. V. Togatov and P. A. Gnatyuk p. 360  abstract

Spectrometry of Short-Range Ions Using Detectors Based on 4H-SiC Films Grown
by Chemical Vapor Deposition

N. B. Strokan, A. M. Ivanov, E. V. Kalinina, G. F. Kholuyanov, G. A. Onushkin,
D. V. Davydov, and G. N. Violina p. 364  abstract

High-Power Laser Diodes Based on Asymmetric Separate-Confinement Heterostructures

D. A. Vinokurov, S. A. Zorina, V. A. Kapitonov, A. V. Murashova, D. N. Nikolaev,
A. L. Stankevich, M. A. Khomylev, V. V. Shamakhov, A. Yu. Leshko, A. V. Lyutetski,
T. A. Nalyot, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, and I. S. Tarasov p. 370  abstract

Book Review

A Review of the Book Atomy legiruyushchikh primese v poluprovodnikakh
(Atoms of Doping Impurities in Semiconductors) by V.I. Fistul’ (Moscow: Fizmatlit, 2004) p. 374

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