Contents
Semiconductors

Vol. 37, No. 3, 2003

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Electronic and Optical Properties of Semiconductors

Temperature Dependence of the Band Structure of 3C, 2H, 4H,
and 6H SiC Polytypes

S. M. Zubkova, L. N. Rusina, and E. V. Smelyanskaya p. 239  abstract

Fine Structure of the Long-Wavelength Edge of Exciton–Phonon Absorption
and Hyperbolic Excitons in Silicon Carbide of 6H Polytype

A. P. Krokhmal’ p. 249  abstract

Effect of Gadolinium Impurity on Transmittance and Reflectance
of Hg₃In₂Te₆ Crystals

P. M. Gorle, O. G. Grushka, and Z. M. Grushka p. 256  abstract

Photoelectric Properties of ZnO Films Doped with Cu
and Ag Acceptor Impurities

A. N. Gruzintsev, V. T. Volkov, and E. E. Yakimov p. 259  abstract

Arrangement of Arsenic Atoms in the PbTe Lattice

S. A. Nemov, P. P. Seregin, S. M. Irkaev, and N. P. Seregin p. 263  abstract

Polyamidine Supramolecular Structures—a New Class
of Photosensitive Polymeric Semiconductors

E. L. Aleksandrova, M. M. Dudkina, and A. V. Ten’kovtsev p. 266  abstract

Thermal Transport of Charge and Polarization of 1.2-eV Luminescence Broad Band
in Uniaxially Strained n-GaAs:Te

A. A. Gutkin and M. A. Reshchikov p. 271  abstract

Thermoelectric Figure of Merit in Solid Solutions
with Phonon Scattering by Off-Center Impurities

E. A. Gurieva, P. P. Konstantinov, L. V. Prokof’eva,
Yu. I. Ravich, and M. I. Fedorov p. 276  abstract

Effect of Annealing in Zn Vapor and Liquid Zn on Photoluminescence
of High-Purity Polycrystalline ZnTe

V. S. Bagaev, V. V. Zatsev, Yu. V. Klevkov,
V. S. Krivobok, and E. E. Onishchenko p. 283  abstract

The Role of Tin in Reactions Involving Carbon Interstitial Atoms in Irradiated Silicon

L. I. Khirunenko, O. A. Kobzar’, Yu. V. Pomozov,
M. G. Sosnin, and N. A. Tripachko p. 288  abstract

Semiconductor Structures, Interfaces, and Surfaces

Layer Structure of Zn_1–xCd_xSe Films Grown by Vapor-Phase Epitaxy
from Metal–Organic Compounds on Cd_0.92Zn_0.08S(0001) Substrates

V. P. Martovitsky, V. I. Kozlovsky, P. I. Kuznetsov,
Ya. K. Skasyrsky, and G. G. Yakushcheva p. 294  abstract

Electronic and Optical Properties of Semiconductors

Properties of Shallow-Level D^–-Centers in Polar Semiconductors

N. I. Kashirina, V. D. Lakhno, V. V. Sychev, and M. K. Sheinkman p. 302  abstract

Semiconductor Structure, Interfaces, and Surfaces

On the Modification of a Silicon Surface Studied by Scanning Tunneling Microscopy

V. M. Kornilov and A. N. Lachinov p. 307  abstract

Low-Dimensional Systems

Phonon Spectra of (GaAs)_n(Ga_1–xAl_xAs)_m Superlattices According to the Keating Model

E. N. Prykina, Yu. I. Polygalov, and A. V. Kopytov p. 312  abstract

Luminescence from ZnO Quantum Dots Deposited with Synthetic Opal

A. N. Gruzintsev, V. T. Volkov, G. A. Emelchenko, I. A. Karpov,
V. M. Masalov, G. M. Mikhalov, and E. E. Yakimov p. 314  abstract

Structure of Energy Quantum Levels in a Quantum Dot Shaped
as an Oblate Body of Revolution

G. G. Zegrya, O. V. Konstantinov, and A. V. Matveentsev p. 317  abstract

Investigation of the Physical Properties of Semiconductor Nanostructures Using Samples
with Laterally Nonuniform Layers: 1. Photoluminescence.

Yu. V. Khabarov p. 322  abstract

Conductivity of One-Dimensional Semiconductor with Periodic Potential

S. D. Beneslavski, A. A. Elistratov, and S. V. Shibkov p. 329  abstract

Amorphous, Vitreous, and Porous Semiconductors

Spectra of Photoluminescence from Silicon Nanocrystals

E. B. Kaganovich, É. G. Manolov, I. R. Basylyuk, and S. V. Svechnikov p. 336  abstract

Kinetics of Growth of Surface Amorphous Layers under
Irradiation of Silicon with Low-Energy Light Ions

A. I. Titov, A. Yu. Azarov, and V. S. Belyakov p. 340  abstract

Structure and Optical Properties of C₆₀ Films on Polymer Substrates

Yu. F. Biryulin, V. N. Zgonnik, E. Yu. Melenevskaya, S. N. Mikov,
S. S. Moliver, S. E. Orlov, A. V. Novoselova, V. D. Petrikov,
V. V. Rozanov, D. A. Sykmanov, and M. A. Yagovkina p. 347  abstract

Physics of Semiconductor Devices

Tunnel Emission of Electrons in Photo-Field Detectors
and in Auger Transistor in Very Strong Electric Fields

V. D. Kalganov, N. V. Mileshkina, and E. V. Ostroumova p. 354  abstract

Charge Transport in Superlattices with Low-Strength Barriers
and the Problem of a Terahertz Bloch Oscillator

A. A. Andronov, I. M. Nefedov, and A. V. Sosnin p. 360  abstract

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