Contents
Semiconductors
Vol. 37, No. 3, 2003
Simultaneous English language translation of the journal is available from MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.
Electronic and Optical Properties of Semiconductors
Temperature Dependence of the Band Structure of 3C, 2H, 4H,
and 6H SiC Polytypes
S. M. Zubkova, L. N. Rusina, and E. V. Smelyanskaya p. 239 abstract
Fine Structure of the Long-Wavelength Edge of ExcitonPhonon Absorption
and Hyperbolic Excitons in Silicon Carbide of 6H Polytype
A. P. Krokhmal p. 249 abstract
Effect of Gadolinium Impurity on Transmittance and Reflectance
of Hg3In2Te6 Crystals
P. M. Gorle, O. G. Grushka, and Z. M. Grushka p. 256 abstract
Photoelectric Properties of ZnO Films Doped with Cu
and Ag Acceptor Impurities
A. N. Gruzintsev, V. T. Volkov, and E. E. Yakimov p. 259 abstract
Arrangement of Arsenic Atoms in the PbTe Lattice
S. A. Nemov, P. P. Seregin, S. M. Irkaev, and N. P. Seregin p. 263 abstract
Polyamidine Supramolecular Structuresa New Class
of Photosensitive Polymeric Semiconductors
E. L. Aleksandrova, M. M. Dudkina, and A. V. Tenkovtsev p. 266 abstract
Thermal Transport of Charge and Polarization of 1.2-eV Luminescence Broad Band
in Uniaxially Strained n-GaAs:Te
A. A. Gutkin and M. A. Reshchikov p. 271 abstract
Thermoelectric Figure of Merit in Solid Solutions
with Phonon Scattering by Off-Center Impurities
E. A. Gurieva, P. P. Konstantinov, L. V. Prokofeva,
Yu. I. Ravich, and M. I. Fedorov p. 276 abstract
Effect of Annealing in Zn Vapor and Liquid Zn on Photoluminescence
of High-Purity Polycrystalline ZnTe
V. S. Bagaev, V. V. Zatsev, Yu. V. Klevkov,
V. S. Krivobok, and E. E. Onishchenko p. 283 abstract
The Role of Tin in Reactions Involving Carbon Interstitial Atoms in Irradiated Silicon
L. I. Khirunenko, O. A. Kobzar, Yu. V. Pomozov,
M. G. Sosnin, and N. A. Tripachko p. 288 abstract
Semiconductor Structures, Interfaces, and Surfaces
Layer Structure of Zn1xCdxSe Films Grown by Vapor-Phase Epitaxy
from MetalOrganic Compounds on Cd0.92Zn0.08S(0001) Substrates
V. P. Martovitsky, V. I. Kozlovsky, P. I. Kuznetsov,
Ya. K. Skasyrsky, and G. G. Yakushcheva p. 294 abstract
Electronic and Optical Properties of Semiconductors
Properties of Shallow-Level D-Centers in Polar Semiconductors
N. I. Kashirina, V. D. Lakhno, V. V. Sychev, and M. K. Sheinkman p. 302 abstract
Semiconductor Structure, Interfaces, and Surfaces
On the Modification of a Silicon Surface Studied by Scanning Tunneling Microscopy
V. M. Kornilov and A. N. Lachinov p. 307 abstract
Low-Dimensional Systems
Phonon Spectra of (GaAs)n(Ga1xAlxAs)m Superlattices According to the Keating Model
E. N. Prykina, Yu. I. Polygalov, and A. V. Kopytov p. 312 abstract
Luminescence from ZnO Quantum Dots Deposited with Synthetic Opal
A. N. Gruzintsev, V. T. Volkov, G. A. Emelchenko, I. A. Karpov,
V. M. Masalov, G. M. Mikhalov, and E. E. Yakimov p. 314 abstract
Structure of Energy Quantum Levels in a Quantum Dot Shaped
as an Oblate Body of Revolution
G. G. Zegrya, O. V. Konstantinov, and A. V. Matveentsev p. 317 abstract
Investigation of the Physical Properties of Semiconductor Nanostructures Using Samples
with Laterally Nonuniform Layers: 1. Photoluminescence.
Yu. V. Khabarov p. 322 abstract
Conductivity of One-Dimensional Semiconductor with Periodic Potential
S. D. Beneslavski, A. A. Elistratov, and S. V. Shibkov p. 329 abstract
Amorphous, Vitreous, and Porous Semiconductors
Spectra of Photoluminescence from Silicon Nanocrystals
E. B. Kaganovich, É. G. Manolov, I. R. Basylyuk, and S. V. Svechnikov p. 336 abstract
Kinetics of Growth of Surface Amorphous Layers under
Irradiation of Silicon with Low-Energy Light Ions
A. I. Titov, A. Yu. Azarov, and V. S. Belyakov p. 340 abstract
Structure and Optical Properties of C60 Films on Polymer Substrates
Yu. F. Biryulin, V. N. Zgonnik, E. Yu. Melenevskaya, S. N. Mikov,
S. S. Moliver, S. E. Orlov, A. V. Novoselova, V. D. Petrikov,
V. V. Rozanov, D. A. Sykmanov, and M. A. Yagovkina p. 347 abstract
Physics of Semiconductor Devices
Tunnel Emission of Electrons in Photo-Field Detectors
and in Auger Transistor in Very Strong Electric Fields
V. D. Kalganov, N. V. Mileshkina, and E. V. Ostroumova p. 354 abstract
Charge Transport in Superlattices with Low-Strength Barriers
and the Problem of a Terahertz Bloch Oscillator
A. A. Andronov, I. M. Nefedov, and A. V. Sosnin p. 360 abstract
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