Contents
Semiconductors

Vol. 36, No. 3, 2002

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Atomic Structures and Nonelectronic Properties of Semiconductors

Clustering of Defects and Impurities in Hydrogenated Single-Crystal Silicon

Kh. A. Abdulin, Yu. V. Gorelkinski, B. N. Mukashev, and S. Zh. Tokmoldin p. 239  abstract

Rapid Thermal Annealing of Gallium Arsenide Implanted with Sulfur Ions

V. M. Ardyshev and M. V. Ardyshev p. 250  abstract

Electronic and Optical Properties of Semiconductors

The Preexponential Factor in Mott’s Law for Variable-Range-Hopping Conduction
in Lightly Compensated p-Hg_0.8Cd_0.2Te Crystals

V. V. Bogoboyashchi p. 254  abstract

E₀ Photoreflectance Spectra of GaAs: Identification of the Features Related
to Impurity Transitions

R. V. Kusmenko and E. P. Domashevskaya p. 259  abstract

Temperature Dependence of Thermoelectric Power in n-InSb
in a Transverse Quantizing Magnetic Field

M. M. Gadzhialiev p. 263  abstract

Effect of Annealing in Oxygen Radicals on Luminescence
and Electrical Conductivity of ZnO:N Films

A. N. Georgobiani, A. N. Gruzintsev, V. T. Volkov, and M. O. Vorob’ev p. 265  abstract

Effective Exciton Mass in III–V Semiconductors

N. S. Averkiev and K. S. Romanov p. 270  abstract

Special Features of Charge Transport in PbGa₂Se₄ Crystals

B. G. Tagiev, N. N. Musaeva, and R. B. Dzhabbarov p. 273  abstract

Semiconductor Structures, Interfaces, and Surfaces

Efficiency of the Intercalation of Aluminum Atoms under a Monolayer
and Submonolayer Two-Dimensional Graphite Film on a Metal

N. R. Gall, E. V. Rut’kov, and A. Ya. Tontegode p. 276  abstract

Simulation of Hydrogen Penetration into p-Type Silicon under Wet Chemical Etching

O. V. Feklisova, E. B. Yakimov, and N. A. Yarykin p. 282  abstract

Internal Ionization Energy in II–VI Compounds

A. V. Komashchenko, V. N. Komashchenko, K. V. Kolezhuk,
G. I. Sheremetova, V. D. Fursenko, and Yu. N. Bobrenko p. 286  abstract

Influence of the Misfit-Dislocation Screw Component on the Formation
of Threading Dislocations in Semiconductor Heterostructures

E. M. Trukhanov, A. V. Kolesnikov, A. P. Vasilenko, and A. K. Gutakovski p. 290  abstract

Low-Dimensional Systems

Optical Properties of Ultradisperse CdSe_xTe_1–x (0 x 1) Particles
in a Silicate Glass Matrix

I. V. Bodnar, V. S. Gurin, A. P. Molochko, N. P. Solove,
P. V. Prokoshin, and K. V. Yumashev p. 298  abstract

Soliton Shape Stabilization in a Superlattice with Next-to-Nearest Neighbor Spectrum
in a Field of a Nonlinear Wave

S. V. Kryuchkov and E. G. Fedorov p. 307  abstract

Resonance Transitions between Split Levels in Three-Barrier Nanostructures
and the Prospects of Using these Structures in Devices Operating
in the Submillimeter-Wave Band

E. I. Golant and A. B. Pashkovski p. 311  abstract

Amorphous, Vitreous, and Porous Semiconductors

Microwave Photoconductivity in Nanocrystalline Porous Titanium Oxide Subjected
to Pulsed Laser Excitation

E. A. Konstantinova, V. Yu. Timoshenko, P. K. Kashkarov, V. G. Kytin,
V. Ya. Gavoronski, H. Porteanu, Th. Dittrich, and F. Koch p. 319  abstract

Special Features of Recombination of Nonequilibrium Charge Carriers
in Porous Silicon with Different Nanostructure Morphologies

M. G. Lisachenko, E. A. Konstantinov, V. Yu. Timoshenko, and P. K. Kashkarov p. 325  abstract

Changes in Properties of a Porous Silicon/Silicon System during Gradual Etching
off of the Porous Silicon Layer

E. F. Venger, T. Ya. Gorbach, S. I. Kirillova, V. E. Primachenko, and V. A. Chernoba p. 330  abstract

Carrier Transport in Porous Silicon

N. S. Averkiev, L. P. Kazakova, and N. N. Smirnova p. 336  abstract

Physics of Semiconductor Devices

Solar Cells Based on CuIn_1–xGa_xSe₂ Films Obtained by Pulsed Laser Evaporation

V. F. Gremenok, I. V. Bodnar’, V. Yu. Rud’, Yu. V. Rud’, and H.-W. Schock p. 340  abstract

Analysis of Threshold Current Density and Optical Gain in InGaAsP Quantum Well Lasers

N. A. Pikhtin, S. O. Sliptchenko, Z. N. Sokolova, and I. S. Tarasov p. 344  abstract

The Use of SiC Triode Structures as Detectors of Nuclear Particles

N. B. Strokan, A. M. Ivanov, N. S. Savkina, D. V. Davydov,
E. V. Bogdanova, and A. A. Lebedev p. 354  abstract

Electrical Properties of Silicon Layers Implanted with Erbium and Oxygen Ions
in a Wide Dose Range and Thermally Treated in Different Temperature Conditions

O. V. Aleksandrov, A. O. Zakhar’in, N. A. Sobolev, and Yu. A. Nikolaev p. 358  abstract

Personalia

Igor’ Georgievich Neizvestny (on his 70th birthday) p. 362

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