Contents

Semiconductors

Vol. 55, No. 3, 2021

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions

I. E. Tyschenko, M. Voelskow, Zh. Si and V. P. Popov p. 289  abstract

Electronic Properties of Semiconductors

Evolution of Electron Transport under Resistive Switching in Porphyrazine Films

K. A. Drozdov, I. V. Krylov, V. A. Vasilik, A. D. Kosov, T. V. Dubinina, L. I. Ryabova and D. R. Khokhlov p. 296  abstract

Impact of an External Magnetic Field on Solitary Waves in Quantum Electron–Hole Plasmas of Semiconductors

S. Malek and H. Hakimi Pajouh p. 301  abstract

Surfaces, Interfaces, and Thin Films

Structural Features of Textured Zinc-Oxide Films Obtained by the Ion-Beam Sputtering Method

V. G. Kostishin, A. Yu. Mironovich, A. V. Timofeev, I. M. Isaev, R. I. Shakirzyanov, A. I. Ril and A. A. Sergienko p. 308  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Shape Effect on the Electrical Properties of Indium-Antimonide Quantum Dots

V. F. Kabanov, A. I. Mikhailov and M. V. Gavrikov p. 315  abstract

Features of Electron Transport in Two-Dimensional Quantum Superlattices with the Non-Associative Dispersion Law

M. L. Orlov and L. K. Orlov p. 319  abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

On the Raman Scattering, Infrared Absorption, and Luminescence Spectroscopy of Aluminum Nitride Doped with Beryllium

I. D. Breev, V. D. Yakovleva, O. S. Kudryavtsev, P. G. Baranov, E. N. Mokhov and A. N. Anisimov p. 328  abstract

Physics of Semiconductor Devices

Effect of the Active Region and Waveguide Design on the Performance of Edge-Emitting Lasers Based on InGaAs/GaAs Quantum Well-Dots

Yu. M. Shernyakov, N. Yu. Gordeev, A. S. Payusov, A. A. Serin, G. O. Kornyshov, A. M. Nadtochiy, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maximov and A. E. Zhukov p. 333  abstract

Influence of Electrodes on the Parameters of Solar-Blind Detectors of UV Radiation

V. M. Kalygina, A. V. Tsymbalov, A. V. Almaev and Yu. S. Petrova p. 341  abstract

Effect of Ambient Humidity on the Electrical Conductivity of Polymorphic Ga2O3 Structures

A. V. Almaev, V. I. Nikolaev, S. I. Stepanov, N. N. Yakovlev, A. I. Pechnikov, E. V. Chernikov and B. O. Kushnarev p. 346  abstract

Suppressing the Temperature Dependence of the Wavelength in Heterostructures with a Staggered Type-II InAsSb/InAsSbP Heterojunction

A. A. Semakova, V. V. Romanov, N. L. Bazhenov, K. D. Mynbaev and K. D. Moiseev p. 354  abstract

TlGaN Quantum-Dot Photodetectors

A. G. Al-Shatravi, H. Hassan, S. M. Abdulalmuhsin and A. H. Al-Khursan p. 359  abstract

Deposition of CZTS|ZnO Hetero-Junction Using SILAR and Spray Pyrolysis

R. Jayakrishnan, A. Raj and V. G. Nair p. 363  abstract

Modeling and Simulation of High-Efficiency Eco-Friendly Perovskite-CZTSe1 – xSx Solar Cell

D. Jalalian, A. Ghadimi and A. K. Sar Kaleh p. 373  abstract

Improvement in Electrical and 2DEG Properties of Al0.26Ga0.74N|GaN|Si HEMTs

F. Jabli, S. Dhouibi and M. Gassoumi p. 379  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Electrodeposition of Metals on p-Si from Aqueous Electrolytes

V. N. Goriaeva and R. A. Bisengaliev p. 384  abstract

High-Quality Etching of GaN Materials with Extremely Slow Rate and Low Damage

X.-M. Zhang, C.-L. Yan, G.-H. Yu, C.-H. Zeng, T.-Y. Sun, Z. Xing, Y.-Q. Wang, J.-H. Yang and B.-S. Zhang p. 387  abstract

Errata

Erratum to: Characteristics of Schottky Rectifier Diodes Based on Silicon Carbide at Elevated Temperatures

A. M. Strel’chuk, A. A. Lebedev and P. V. Bulat p. 394  abstract