Vol. 54, No. 3, 2020

Semiconductors

Electronic Properties of Semiconductors

Heating of Electrons in Pure Ge in a Quantum Magnetic Field Upon the Thermal Excitation of Charge Carriers

V. F. Bannaya and E. V. Nikitina p. 275 abstract

Effect of the Beryllium Acceptor Impurity upon the Optical Properties of Single-Crystal AlN

E. N. Mokhov, M. K. Rabchinskiy, S. S. Nagalyuk, M. R. Gafurov and O. P. Kazarova p. 278 abstract

Reflection from the Side Face of a PbSb₂Te₄ Crystal

S. A. Nemov, Yu. V. Ulashkevich, M. V. Pogumirsky and O. S. Stepanova p. 282 abstract

Surfaces, Interfaces, and Thin Films

Photoluminescence and Photoelectric Properties of the ZnO–LiNbO₃ Thin-Film Structure in the Ultraviolet and Visible Spectral Regions

L. V. Grigoryev, I. S. Morozov, N. V. Zhuravlev, A. A. Semenov and A. A. Nikitin p. 285 abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

On the Role of Structural Imperfections of Graphene in Resonant Tunneling through Localized States in the h-BN Barrier of van-der-Waals Heterostructures

M. V. Grigoriev, D. A. Ghazaryan, E. E. Vdovin, Yu. N. Khanin, S. V. Morozov and K. S. Novoselov p. 291 abstract

Characteristics of DC Electrical Conductivity and Optoelectronic Features of Tin Dioxide Nanocrystals Synthesized by Sol–Gel Chemistry

A. M. Badr, H. H. Afify, Sh. E. Shaker and H. A. Elshaikh p. 297 abstract

Effective Mass Model Supported Band Gap Variation in Cobalt-Doped ZnO Nanoparticles Obtained by Co-Precipitation

K. P. Misra, S. Jain, A. Agarwala, N. Halder and S. Chattopadhyay p. 311 abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Ohmic Contacts to Gallium Nitride-Based Structures

A. V. Zhelannov, A. S. Ionov, B. I. Seleznev and D. G. Fedorov p. 317 abstract

On the Formation of Amorphous Ge Nanoclusters and Ge Nanocrystals in GeSi_xO_y Films on Quartz Substrates by Furnace and Pulsed Laser Annealing

Zhang Fan, S. A. Kochubey, M. Stoffel, H. Rinnert, M. Vergnat and V. A. Volodin p. 322 abstract

Manganese Clusterization in ZnS:Mn, Mg Synthesized by Self-Propagating High-Temperature Synthesis

Yu. Yu. Bacherikov, I. P. Vorona, O. B. Okhrimenko, V. P. Kladko, A. G. Zhuk, S. M. Okulov, Yu. O. Polishchuk, A. V. Gilchuk, Yu. M. Romanenko and V. V. Kidalov p. 330 abstract

Physics of Semiconductor Devices

Kelvin Probe Force Microscopy Study of the Electrostatic System of the Crystal Surface of AuNi/GaN Schottky Diodes

N. A. Torkhov and V. A. Novikov p. 337 abstract

Double Avalanche Injection in Diode Avalanche Sharpeners

M. S. Ivanov, N. I. Podolska and P. B. Rodin p. 345 abstract

Properties of a Tamm-Plasmon-Based Microcavity with Metal Intracavity Layers and an Organic Active Region

K. M. Morozov, A. V. Belonovskii, E. I. Girshova, K. A. Ivanov and M. A. Kaliteevski p. 350 abstract

Development and Study of the p–i–n GaAs/AlGaAs Tunnel Diodes for Multijunction Converters of High-Power Laser Radiation

V. S. Kalinovskii, E. V. Kontrosh, G. V. Klimko, S. V. Ivanov, V. S. Yuferev, B. Y. Ber, D. Y. Kazantsev and V. M. Andreev p. 355 abstract

Photoreversible Current in InGaN/GaN-Based LED Heterostructures with Different Numbers of QWs

A. E. Aslanyan, L. P. Avakyants, A. V. Chervyakov, A. N. Turkin, V. A. Kureshov, D. R. Sabitov and A. A. Marmalyuk p. 362 abstract

Parasitic Recombination in a Laser with Asymmetric Barrier Layers

F. I. Zubov, M. E. Muretova, A. S. Payusov, M. V. Maximov, A. E. Zhukov and L. V. Asryan p. 366 abstract

Synthesis and Characterization of Sol–Gel Screen Printed Gd:ZnO (GZO) Film Towards Opto-Electronic Applications

Preeti Chaudhary and Vipin Kumar p. 374 abstract

Fabrication, Treatment, and Testing of Materials and Structures

On the Pulsed-Laser Deposition of Bismuth-Telluride Thin Films on Polyimide Substrates

A. E. Shupenev, I. S. Korshunov and A. G. Grigoryants p. 378 abstract

Impedance Spectroscopy of Porous Silicon and Silicon-Carbon Anodes Produced by Sintering

D. A. Lozhkina, A. M. Rumyantsev and E. V. Astrova p. 383 abstract