Contents
Semiconductors


Vol. 35, No. 3, 2001

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.


Reviews

Electrical and Optical Properties of Pristine and Polymerized Fullerenes

T. L. Makarova p. 243  abstract


Atomic Structure and Nonelectronic Properties of Semiconductors

Heteroepitaxy of II–VI Compound Semiconductors on Cooled Substrates

A. P. Belyaev and V. P. Rubets p. 279  abstract

Molecular-Dynamics Simulation of Structural Properties of Ge1 – xSnx Substitutional Solid Solutions

V. G. Deframe0buk and Yu. G. Korolyuk p. 283  abstract

Low-Temperature Diffusion of Indium into Germanium Assisted by Atomic Hydrogen

V. M. Matyushin p. 287  abstract

A New Magnetic Semiconductor Cd1 – xMnxGeP2

G. A. Medvedkin, T. Ishibashi, T. Nishi, and K. Sato p. 291  abstract


Electronic and Optical Properties of Semiconductors

Temperature Dependence of a Magnetoresistance Effect in the Films
of Ferromagnetic Semiconductors Based on Oxides of Rare-Earth Elements

V. F. Kabanov, S. A. Karasev, and Ya. G. Fedorenko p. 295  abstract

Specific Features of the Nonequilibrium Distribution Function for Electron Scattering
by Polar Optical Phonons in III–V Semiconductors

S. I. Borisenko p. 298  abstract

On the Stabilization of Electrical Properties of Compensated Silicon as a Result
of Irradiation with 60Co Gamma-Ray Quanta

M. S. Yunusov, M. Karimov, and M. A. Dzhalelov p. 302  abstract

Generation–Recombination Processes in Semiconductors

I. N. Volovichev and Yu. G. Gurevich p. 306  abstract

Capacitance–Voltage Characteristics of pn Structures Based on (111)Si Doped
with Erbium and Oxygen

A. M. Emel’yanov, N. A. Sobolev, and A. N. Yakimenko p. 316  abstract


Semiconductor Structures, Interfaces, and Surfaces

Negative Luminescence in p-InAsSbP/n-InAs Diodes

M. Aframe1daraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyframe2,
N. M. Stus’, and G. N. Talalakin
p. 321
 abstract

Characterization of Electroluminescent Structures Based on Gallium Arsenide
Ion-Implanted with Ytterbium and Oxygen

D. W. Palmer, V. A. Dravin, V. M. Konnov, E. A. Bobrova, N. N. Loframe3ko,
S. G. Chernook, and A. A. Gippius
p. 325
 abstract

Type II Heterojunctions in an InGaAsSb/GaSb System: Magnetotransport Properties

T. I. Voronina, B. E. Zhurtanov, T. S. Lagunova, M. P. Mikhaframe4lova, K. D. Moiseev,
A. E. Rozov, and Yu. P. Yakovlev
p. 331
 abstract

Extension of the Frequency Range of the Noise Spectral Density
in Silicon pn Structures Irradiated with Gamma-Ray Quanta

O. K. Baranovskiframe5, P. V. Kuchinskiframe6, V. M. Lutkovskiframe7, A. P. Petrunin, and E. D. Savenok p. 338  abstract


Low-Dimensional Systems

Carrier Photoexcitation from Levels in Quantum Dots to States
of the Continuum in Lasing

L. V. Asryan and R. A. Suris p. 343  abstract

Composition Analysis of Coherent Nanoinsertions of Solid Solutions
on the Basis of High-Resolution Electron Micrographs

I. P. Soshnikov, O. M. Gorbenko, A. O. Golubok, and N. N. Ledentsov p. 347  abstract


Amorphous, Vitreous, and Porous Semiconductors

Electrical and Photoelectric Properties of a-Si:H Layered Films:
The Influence of Thermal Annealing

I. A. Kurova, N. N. Ormont, E. I. Terukov, I. N. Trapeznikova, V. P. Afanas’ev, and A. S. Gudovskikh p. 353  abstract


Physics of Semiconductor Devices

Optically Pumped Mid-Infrared InGaAs(Sb) LEDs

N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyframe8,
N. M. Stus’, G. N. Talalakin, and V. V. Shustov
p. 357
 abstract

Current-Tunable Lasers with a Narrow Emission Line Operating at 3.3 m

A. N. Imenkov, N. M. Kolchanova, P. Kubat, K. D. Moiseev, C. Civiframe9, and Yu. P. Yakovlev p. 360  abstract

Record Power Characteristics of InGaAs/AlGaAs/GaAs Heterostructure Lasers

D. A. Livshits, A. Yu. Egorov, I. V. Kochnev, V. A. Kapitonov, V. M. Lantratov, N. N. Ledentsov,
T. A. Nalyot, and I. S. Tarasov
p. 365
 abstract


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