Contents
Semiconductors
Vol. 35, No. 3, 2001
Simultaneous
English language translation of the journal is available from
MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors
ISSN 1063-7826.
Reviews
Electrical and Optical Properties of Pristine and Polymerized Fullerenes
T. L. Makarova p. 243 abstract
Atomic Structure and Nonelectronic Properties of Semiconductors
Heteroepitaxy of IIVI Compound Semiconductors on Cooled Substrates
A. P. Belyaev and V. P. Rubets p. 279 abstract
Molecular-Dynamics Simulation of Structural Properties of Ge1 xSnx Substitutional Solid Solutions
V. G. De
buk and Yu. G. Korolyuk p. 283 abstract
Low-Temperature Diffusion of Indium into Germanium Assisted by Atomic Hydrogen
V. M. Matyushin p. 287 abstract
A New Magnetic Semiconductor Cd1 xMnxGeP2
G. A. Medvedkin, T. Ishibashi, T. Nishi, and K. Sato p. 291 abstract
Electronic and Optical Properties of Semiconductors
Temperature
Dependence of a Magnetoresistance Effect in the Films
of Ferromagnetic Semiconductors Based on Oxides of Rare-Earth
Elements
V. F. Kabanov, S. A. Karasev, and Ya. G. Fedorenko p. 295 abstract
Specific Features
of the Nonequilibrium Distribution Function for Electron
Scattering
by Polar Optical Phonons in IIIV Semiconductors
S. I. Borisenko p. 298 abstract
On the
Stabilization of Electrical Properties of Compensated Silicon as
a Result
of Irradiation with 60Co Gamma-Ray Quanta
M. S. Yunusov, M. Karimov, and M. A. Dzhalelov p. 302 abstract
GenerationRecombination Processes in Semiconductors
I. N. Volovichev and Yu. G. Gurevich p. 306 abstract
CapacitanceVoltage
Characteristics of pn Structures Based on
(111)Si Doped
with Erbium and Oxygen
A. M. Emelyanov, N. A. Sobolev, and A. N. Yakimenko p. 316 abstract
Semiconductor Structures, Interfaces, and Surfaces
Negative Luminescence in p-InAsSbP/n-InAs Diodes
M. A
daraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remenny
,
N. M. Stus, and G. N. Talalakin p. 321 abstract
Characterization
of Electroluminescent Structures Based on Gallium Arsenide
Ion-Implanted with Ytterbium and Oxygen
D. W. Palmer, V. A. Dravin, V. M. Konnov, E. A. Bobrova, N. N. Lo
ko,
S. G. Chernook, and A. A. Gippius p. 325 abstract
Type II Heterojunctions in an InGaAsSb/GaSb System: Magnetotransport Properties
T. I. Voronina, B. E. Zhurtanov, T. S. Lagunova, M. P. Mikha
lova, K. D. Moiseev,
A. E. Rozov, and Yu. P. Yakovlev p. 331 abstract
Extension of the
Frequency Range of the Noise Spectral Density
in Silicon pn Structures Irradiated with
Gamma-Ray Quanta
O. K. Baranovski
, P. V. Kuchinski
, V. M. Lutkovski
, A. P. Petrunin, and E. D. Savenok p. 338 abstract
Low-Dimensional Systems
Carrier
Photoexcitation from Levels in Quantum Dots to States
of the Continuum in Lasing
L. V. Asryan and R. A. Suris p. 343 abstract
Composition
Analysis of Coherent Nanoinsertions of Solid Solutions
on the Basis of High-Resolution Electron Micrographs
I. P. Soshnikov, O. M. Gorbenko, A. O. Golubok, and N. N. Ledentsov p. 347 abstract
Amorphous, Vitreous, and Porous Semiconductors
Electrical and
Photoelectric Properties of a-Si:H Layered Films:
The Influence of Thermal Annealing
I. A. Kurova, N. N. Ormont, E. I. Terukov, I. N. Trapeznikova, V. P. Afanasev, and A. S. Gudovskikh p. 353 abstract
Physics of Semiconductor Devices
Optically Pumped Mid-Infrared InGaAs(Sb) LEDs
N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remenny
,
N. M. Stus, G. N. Talalakin, and V. V. Shustov p. 357 abstract
Current-Tunable
Lasers with a Narrow Emission Line Operating at 3.3 m
A. N. Imenkov, N. M. Kolchanova, P. Kubat, K. D. Moiseev, C. Civi
, and Yu. P. Yakovlev p. 360 abstract
Record Power Characteristics of InGaAs/AlGaAs/GaAs Heterostructure Lasers
D. A. Livshits, A. Yu. Egorov, I. V. Kochnev, V. A. Kapitonov, V. M. Lantratov, N. N. Ledentsov,
T. A. Nalyot, and I. S. Tarasov p. 365 abstract
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