Vol. 53, No. 3, 2019

Semiconductors

Review

Discovery of III–V Semiconductors: Physical Properties and Application

M. P. Mikhailova, K. D. Moiseev and Yu. P. Yakovlev p. 273 abstract

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Anharmonicity of Lattice Vibrations in Bi₂Se₃ Single Crystals

Z. I. Badalova, N. A. Abdullayev, G. H. Azhdarov, Kh. V. Aliguliyeva, S. Sh. Gahramanov, S. A. Nemov and N. T. Mamedov p. 291 abstract

Decomposition of a Solid Solution of Interstitial Magnesium in Silicon

V. B. Shuman, A. N. Lodygin, L. M. Portsel, A. A. Yakovleva, N. V. Abrosimov and Yu. A. Astrov p. 296 abstract

Electronic Properties of Semiconductors

Specific Features of the Electron Spin Resonance of an Iron Impurity in HgSe Crystals

A. I. Veinger, I. V. Kochman, V. I. Okulov, T. A. Govorkova, M. D. Andriichuk and L. D. Paranchich p. 298 abstract

Effect of the Copper Content on the Kinetics of the Microwave Photoconductivity of CIGS Solid Solutions

G. F. Novikov, E. V. Rabenok, P. S. Orishina, M. V. Gapanovich and I. N. Odin p. 304 abstract

Spectroscopy, Interaction with Radiation

Luminescence of (ZnSe:Al):Yb Сrystals at 4.2 K

V. P. Makhniy, N. D. Vakhnyak, O. V. Kinzerska and Yu. P. Pyryatynsky p. 310 abstract

Surfaces, Interfaces, and Thin Films

Structure and Properties of Zn-Implanted Si Near-Surface Layer Modification Depending on Irradiation Fluence of ¹³²Xe²⁶⁺ Ions with Energy of 167 MeV

V. V. Privezentsev, V. S. Kulikauskas, V. A. Skuratov, O. S. Zilova, A. A. Burmistrov, M. Yu. Presnyakov and A. V. Goryachev p. 313 abstract

Mechanism and Features of Field Emission in Semiconductors

N. D. Zhukov, A. I. Mikhailov and D. S. Mosiyash p. 321 abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

MOS-Hydride Epitaxy Growth of InGaAs/GaAs Submonolayer Quantum Dots for the Excitation of Surface Plasmon–Polaritons

N. V. Baidus, V. A. Kukushkin, S. M. Nekorkin, A. V. Kruglov and D. G. Reunov p. 326 abstract

Studying Magnetic Diodes with a GaMnAs Layer Formed by Pulsed Laser Deposition

B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, M. V. Dorokhin, A. V. Kudrin, I. L. Kalentyeva, E. A. Larionova, V. A. Kovalskiy and O. A. Soltanovich p. 332 abstract

Electron-Quantum Transport in Pseudomorphic and Metamorphic In_0.2Ga_0.8As-Based Quantum Wells

A. N. Vinichenko, D. A. Safonov, N. I. Kargin and I. S. Vasil’evskii p. 339 abstract

Spontaneous Emission and Lasing of a Two-Wavelength Quantum-Cascade Laser

A. V. Babichev, A. G. Gladyshev, A. S. Kurochkin, E. S. Kolodeznyi, V. N. Nevedomskii, L. Ya. Karachinsky, I. I. Novikov, A. N. Sofronov and A. Yu. Egorov p. 345 abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

On the Mechanism of the Vapor–Solid–Solid Growth of Au-Catalyzed GaAs Nanowires

A. A. Koryakin, S. A. Kukushkin and N. V. Sibirev p. 350 abstract

Optical Properties of CdS Nanocrystals Doped with Zinc and Copper

Yu. A. Nitsuk, M. I. Kiose, Yu. F. Vaksman, V. A. Smyntyna and I. R. Yatsunskyi p. 361 abstract

Physics of Semiconductor Devices

Investigation into the Radiation Hardness of Photodiodes Based on Silicon-on-Sapphire Structures

Yu. A. Kabalnov, A. N. Trufanov and S. V. Obolensky p. 368 abstract

EMF Induced in a p–n Junction under a Strong Microwave Field and Light

G. Gulyamov, U. I. Erkaboev, N. Yu. Sharibaev and A. G. Gulyamov p. 375 abstract

Subnanosecond Avalanche Switching Simulations of n⁺–n–n⁺ Silicon Structures

N. I. Podolska and P. B. Rodin p. 379 abstract

Simulation of Transient Processes in 4H-SiC Based Semiconductor Devices (Taking into Account the Incomplete Ionization of Dopants in the ATLAS Module of the SILVACO TCAD Software Package)

P. A. Ivanov, A. S. Potapov and T. P. Samsonova p. 385 abstract

Fabrication, Treatment, and Testing of Materials and Structures

Structure and Properties of Gallium-Oxide Films Produced by High-Frequency Magnetron-Assisted Deposition

V. M. Kalygina, T. Z. Lygdenova, V. A. Novikov, Yu. S. Petrova, A. V. Tsymbalov and T. M. Yaskevich p. 388 abstract

Formation of Nanoporous Copper-Silicide Films

E. Yu. Buchin, V. V. Naumov and S. V. Vasilyev p. 395 abstract

Crystallization of Amorphous Germanium Films and Multilayer a-Ge/a-Si Structures upon Exposure to Nanosecond Laser Radiation

V. A. Volodin, G. K. Krivyakin, G. D. Ivlev, S. L. Prokopyev, S. V. Gusakova and A. A. Popov p. 400 abstract

Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches

Jung-Hui Tsai, Pao-Sheng Lin, Yu-Chi Chen, Syuan-Hao Liou and Jing-Shiuan Niu p. 406 abstract

Contents