Contents

Semiconductors

Vol. 50, No. 3, 2016

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Ab Initio Calculations of Phonon Dispersion in ZnGa2Se4

Z. A. Dzhakhangirli, T. G. Kerimova and N. A. Abdullaev p. 285  abstract

Electronic Properties of Semiconductors

On Measurements of the Electrons and Holes Impact-Ionization Coefficients in 4H–SiC

A. S. Kyuregyan p. 289  abstract

Effect of Phonon Drag on the Thermopower in a Parabolic Quantum Well

Kh. A. Hasanov, J. I. Huseynov, V. V. Dadashova and F. F. Aliyev p. 295  abstract

A Quasi-Classical Model of the Hubbard Gap in Lightly Compensated Semiconductors

N. A. Poklonski, S. A. Vyrko, A. I. Kovalev and A. G. Zabrodskii p. 299  abstract

Surfaces, Interfaces, and Thin Films

Deep Centers at the Interface in In2xGa2(1 – x)Te3/InAs and In2Te3/InAs Heterostructures

E. P. Domashevskaya, E. A. Mikhailyuk, T. V. Prokopova and N. N. Bezryadin p. 309  abstract

Role of Acoustoelectric Interaction in the Formation of Nanoscale Periodic Structures of Adsorbed Atoms

R. M. Peleshchak, I. I. Lazurchak, O. V. Kuzyk, O. O. Dan’kiv and G. G. Zegrya p. 314  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Investigation of Ion-Implanted Photosensitive Silicon Structures by Electrochemical Capacitance–Voltage Profiling

G. E. Yakovlev, D. S. Frolov, A. V. Zubkova, E. E. Levina, V. I. Zubkov, A. V. Solomonov, O. K. Sterlyadkin and S. A. Sorokin p. 320  abstract

Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation

E. A. Tarasova, A. V. Khananova, S. V. Obolensky, V. E. Zemlyakov, Yu. N. Sveshnikov, V. I. Egorkin, V. A. Ivanov, G. V. Medvedev and D. S. Smotrin p. 326  abstract

Electrical and Photoelectric Properties of the TiN/p-InSe Heterojunction

I. G. Orletsky, M. I. Ilashchuk, V. V. Brus, P. D. Marianchuk, M. M. Solovan and Z. D. Kovalyuk p. 334  abstract

Layer-by-Layer Analysis of the Thickness Distribution of Silicon Dioxide in the Structure SiO2/Si(111) by Inelastic Electron Scattering Cross-Section Spectroscopy

A. S. Parshin, S. A. Kushchenkov, O. P. Pchelyakov and Yu. L. Mikhlin p. 339  abstract

Epitaxially Grown Monoisotopic Si, Ge, and Si1 – xGex Alloy Layers: Production and Some Properties

A. P. Detochenko, S. A. Denisov, M. N. Drozdov, A. I. Mashin, V. A. Gavva, A. D. Bulanov, A. V. Nezhdanov, A. A. Ezhevskii, M. V. Stepikhova, V. Yu. Chalkov, V. N. Trushin, D. V. Shengurov, V. G. Shengurov, N. V. Abrosimov and H. Riemann p. 345  abstract

Two Stages of Surface-Defect Formation in a MOS Structure under Low-Dose Rate Gamma Irradiation

V. D. Popov p. 349  abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

On Controlling the Hydrophobicity of Nanostructured Zinc-Oxide Layers Grown by Pulsed Electrodeposition

N. P. Klochko, K. S. Klepikova, V. R. Kopach, G. S. Khrypunov, Yu. O. Myagchenko, E. E. Melnychuk, V. M. Lyubov and A. V. Kopach p. 352  abstract

Photoluminescence and Confinement of Excitons in Disordered Porous Films

N. V. Bondar, M. S. Brodin, A. M. Brodin and N. A. Matveevskaya p. 364  abstract

Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

E. B. Chubenko, S. V. Redko, A. I. Sherstnyov, V. A. Petrovich, D. A. Kotov and V. P. Bondarenko p. 372  abstract

Carbon Systems

Model of Adsorption on Amorphous Graphene

S. Yu. Davydov p. 377  abstract

Physics of Semiconductor Devices

Model Development for Current–Voltage and Transconductance Characteristics of Normally-off AlN/GaN MOSHEMT

R. Swain, K. Jena and T. R. Lenka p. 384  abstract

Microdisk Injection Lasers for the 1.27-μm Spectral Range

N. V. Kryzhanovskaya, M. V. Maximov, S. A. Blokhin, M. A. Bobrov, M. M. Kulagina, S. I. Troshkov, Yu. M. Zadiranov, A. A. Lipovskii, E. I. Moiseev, Yu. V. Kudashova, D. A. Livshits, V. M. Ustinov and A. E. Zhukov p. 390  abstract

High-Power Thyristor Switching via an Overvoltage Pulse with Nanosecond Rise Time

A. I. Gusev, S. K. Lyubutin, S. N. Rukin and S. N. Tsyranov p. 394  abstract

High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base

M. E. Levinshtein, T. T. Mnatsakanov, S. N. Yurkov, A. G. Tandoev, Sei-Hyung Ryu and J. W. Palmour p. 404  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Effect of the Ti-Nanolayer Thickness on the Self-Lift-off of Thick GaN Epitaxial Layers

A. A. Yugov, S. S. Malahov, A. A. Donskov, M. P. Duhnovskii, S. N. Knyazev, Yu. P. Kozlova, T. G. Yugova and I. A. Belogorokhov p. 411  abstract

Formation of Cadmium-Sulfide Nanowhiskers via Vacuum Evaporation and Condensation in a Quasi-Closed Volume

A. P. Belyaev, V. V. Antipov and V. P. Rubets p. 415  abstract

Optical and Structural Properties of Composite Si:Au Layers Formed by Laser Electrodispersion

O. S. Ken, V. S. Levitskii, D. A. Yavsin, S. A. Gurevich, V. Yu. Davydov and O. M. Sreseli p. 418  abstract