Contents
Semiconductors

Vol. 47, No. 3, 2013

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Electronic Properties of Semiconductors

Electrical Properties of Pb_1–xMn_xTe Single Crystals with an Excess of Tellurium

G. Z. Bagieva, G. D. Abdinova, N. B. Mustafayev, and D. Sh. Abdinov p. 315  abstract

Photoconductivity of Vanadium-Doped Lead Telluride in the Terahertz Spectral Region

A. I. Artamkin, A. A. Dobrovolsky, A. A. Vinokurov, V. P. Zlomanov, S. N. Danilov,
V. V. Bel’kov, L. I. Ryabova, and D. R. Khokhlov p. 319  abstract

Specific Features of Self-Compensation in Er_xSn_1–xSe Solid Solutions

J. I. Huseynov, M. I. Murguzov, and Sh. S. Ismayilov p. 323  abstract

Violation of Neutrality and Occurrence of S-Shaped Current–Voltage Characteristic
for Doped Semiconductors under Double Injection

T. T. Mnatsakanov, A. G. Tandoev, M. E. Levinshtein, S. N. Yurkov, and J. W. Palmour p. 327  abstract

Surfaces, Interfaces, and Thin Films

Study of the Recombination Process at Crystallite Boundaries
in CuIn_1–xGa_xSe₂ (CIGS) Films by Microwave Photoconductivity

K. V. Bocharov, G. F. Novikov, T. Y. Hsieh, M. V. Gapanovich, and M. J. Jeng p. 335  abstract

Thermally Deposited Ag-doped CdS Thin Film Transistors
with High-k Rare-Earth Oxide Nd₂O₃ as Gate Dielectric

P. Gogoi p. 341  abstract

Optical Size Effect in In₂O₃ Nanostructured Films

V. M. Katerynchuk and Z. R. Kudrynskyi p. 345  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Effect of Bi Isovalent Dopants on the Formation
of Homogeneous Coherently Strained InAs Quantum Dots in GaAs Matrices

R. M. Peleshchak, S. K. Guba, O. V. Kuzyk, I. V. Kurilo, and O. O. Dankiv p. 349  abstract

Dependence of the Efficiency of Raman Scattering in Silicon Nanowire Arrays
on the Excitation Wavelength

K. V. Bunkov, L. A. Golovan, K. A. Gonchar, V. Yu. Timoshenko, P. K. Kashkarov,
M. Kulmas, and V. Sivakov p. 354  abstract

Influence of Irradiation with Swift Heavy Ions on Multilayer Si/SiO₂ Heterostructures

G. A. Kachurin, S. G. Cherkova, D. V. Marin, V. A. Volodin, A. G. Cherkov,
A. Kh. Antonenko, G. N. Kamaev, and V. A. Skuratov p. 358  abstract

Revealing the Surface Interface Correlations in a-Si:H Films
by 2D Detrended Fluctuation Analysis

A. V. Alpatov, S. P. Vikhrov, and N. V. Grishankina p. 365  abstract

Maximum Drift Velocity of Electrons in Selectively
Doped InAlAs/InGaAs/InAlAs Heterostructures with InAs Inserts

A. Silenas, Yu. Poela, K. Poela, V. Jucien, I. S. Vasil’evskii, G. B. Galiev,
S. S. Pushkarev, and E. A. Klimov p.372  abstract

Amorphous, Vitreous, and Organic Semiconductors

Study of the Composition, Structure, and Optical Properties
of a-Si_1–xC_x:HEr Films Erbium Doped from the Er(pd)₃ Complex Compound

V. Kh. Kudoyarova, V. A. Tolmachev, and E. V. Gushchina p. 376  abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Photoconductivity of Composite Structures Based
on Porous SnO₂ Sensitized with CdSe Nanocrystals

K. A. Drozdov, V. I. Kochnev, A. A. Dobrovolsky, R. B. Vasiliev, A. V. Babynina,
M. N. Rumyantseva, A. M. Gaskov, L. I. Ryabova, and D. R. Khokhlov p. 383  abstract

Physics of Semiconductor Devices

Features of the Performance of a Transient Voltage Suppressor in the Pulsed Mode

A. Z. Rahmatov, O. A. Abdulkhaev, A. V. Karimov, and D. M. Yodgorova p. 387  abstract

Surface Functional Composition and Sensor Properties of ZnO, Fe₂O₃, and ZnFe₂O₄

S. S. Karpova, V. A. Moshnikov, S. V. Mjakin, and E. S. Kolovangina p. 392  abstract

Theory and Simulation of Combined Mechanisms Limiting
the Safe Operating Area of Power Semiconductor Microelectronic Switches

A. V. Gorbatyuk, D. V. Gusin, and B. V. Ivanov p. 396  abstract

Picosecond Internal Q-switching Mode Correlates with Laser Diode Breakdown Voltage

B. Lanz, S. N. Vainshtein, V. M. Lantratov, N. A. Kalyuzhnyy,
S. A. Mintairov, and J. T. Kostamovaara p. 406  abstract

Comparison of the Properties of AlGaInN Light-Emitting Diode Chips
of Vertical and Flip-Chip Design Using Silicon as the a Submount

L. K. Markov, I. P. Smirnova, A. S. Pavlyuchenko, M. V. Kukushkin,
E. D. Vasil’eva, A. E. Chernyakov, and A. S. Usikov p. 409  abstract

Optimization of the Deposition and Annealing Conditions
of Fluorine-Doped Indium Oxide Films for Silicon Solar Cells

G. G. Untila, T. N. Kost, A. B. Chebotareva, and M. A. Timofeyev p. 415  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Influence of Doping with Third Group Oxides on Properties of Zinc Oxide Thin Films

Sowmya Palimar, Kasturi V. Bangera, and G. K. Shivakumar p. 422  abstract

Transition from the Two- to Three-Dimensional Growth of Ge Films
upon Deposition onto Relaxed SiGe/Si(001) Buffer Layers

M. V. Shaleev, A. V. Novikov, D. V. Yurasov, J. M. Hartmann, O. A. Kuznetsov,
D. N. Lobanov, and Z. F. Krasilnik p. 427  abstract

Low-Temperature Growth of Silicon Epitaxial Layers Codoped with Erbium and Oxygen Atoms

D. V. Shengurov, V. Yu. Chalkov, S. A. Denisov, V. G. Shengurov, M. V. Stepikhova,
M. N. Drozdov, and Z. F. Krasilnik p. 433  abstract

Influence of the Carrier Gas, Trimethylgallium Flow, and Growth Time
on the Character of the Selective Epitaxy of GaN

M. M. Rozhavskaya, V. V. Lundin, E. E. Zavarin, S. I. Troshkov,
P. N. Brunkov, and A. F. Tsatsulnikov p. 437  abstract

Specific Features of Nanosize Object Formation in an InSb/InAs System
by Metal-Organic Vapor-Phase Epitaxy

V. V. Romanov, P. A. Dement’ev, and K. D. Moiseev p. 443  abstract

The Mechanism of Contact-Resistance Formation on Lapped n-Si Surfaces

A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, A. O. Vinogradov, L. M. Kapitanchuk,
R. V. Konakova, V. P. Kostylyov, Ya. Ya. Kudryk, V. P. Kladko, and V. N. Sheremet p.449  abstract

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