Contents
Semiconductors

Vol. 45, No. 3, 2011

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Mechanisms of Defect Formation in Ingots of 4H Silicon Carbide Polytype

D. D. Avrov, A. V. Bulatov, S. I. Dorozhkin, A. O. Lebedev, Yu. M. Tairov, and A. Yu. Fadeev p. 277  abstract

Electronic Properties of Semiconductors

The I–V Characteristics of Asymmetrically Necked Samples of High-Resistivity Silicon

S. Asmontas and V. Kleiza p. 284  abstract

Heating of Charge Carriers and Rectification of Current
in Asymmetrical p–n Junction in a Microwave Field

M. G. Dadamirzayev p. 288  abstract

Effect of Temperature on Electron Spectra in the Region
of the Intrinsic-Absorption Edge of CdGa₂Se₄

T. G. Kerimova and R. A. Guliyev p. 292  abstract

Spectroscopy, Interaction with Radiation

A Model of Nonlinear Optical Transmittance for Insulator Nanocomposites

V. P. Dzyuba, A. E. Krasnok, J. N. Kulchin, and I. V. Dzyuba p. 295  abstract

Surfaces, Interfaces, and Thin Films

Specific Features of Amorphous Silicon Layers Grown
by Plasma-Enhanced Chemical Vapor Deposition with Tetrafluorosilane

J. S. Vainshtein, O. I. Kon’kov, A. V. Kukin, O. S. El’tsina, L. V. Belyakov,
E. I. Terukov, and O. M. Sreseli p. 302  abstract

Raman Scattering in Self-Formed Nanoporous Carbon Produced
on the Basis of Silicon Carbide

M. E. Kompan, D. S. Krylov, and V. V. Sokolov p. 306  abstract

Mechanisms of Current Flow in Au–CdTe Contacts with a Modified Surface

V. P. Machnij and N. J. Skrypnyk p. 312  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Optical Constants Detection in Tin Dioxide Nano-Size Layers
by Surface Plasmon Resonance Investigation

B. K. Serdega, I. E. Matyash, L. S. Maximenko, S. P. Rudenko, V. A. Smyntyna,
V. S. Grinevich, L. N. Filevskaya, B. Ulug, A. Ulug, and B. M. Ycel p. 316  abstract

Photoreflectance Spectroscopy of Electron–Hole States
in a Graded-Width GaAs/InGaAs/GaAs Quantum Well

L. P. Avakyants, P. Yu. Bokov, E. V. Glazyrin, I. P. Kazakov, and A. V. Chervyakov p. 320  abstract

Silicon-on-Insulator Structures with a Nitrogenated Buried SiO₂ Layer:
Preparation and Properties

I. E. Tyschenko and V. P. Popov p.325  abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Structure and Properties of Small Clusters of Transition 3d-Element Oxides

A. V. Popov p. 333  abstract

Carrier Transport in Layered Semiconductor (p-GaSe)–Ferroelectric (KNO₃)
Composite Nanostructures

A. P. Bakhtinov, V. N. Vodopyanov, Z. D. Kovalyuk, V. V. Netyaga, and D. Yu. Konoplyanko p. 338  abstract

Study of the Processes of Carbonization and Oxidation of Porous Silicon
by Raman and IR Spectroscopy

A. V. Vasin, P. N. Okholin, I. N. Verovsky, A. N. Nazarov, V. S. Lysenko,
K. I. Kholostov, V. P. Bondarenko, and Y. Ishikawa p. 350  abstract

Physics of Semiconductor Devices

Analysis of Spatial Modes in Half-Disk Lasers Based
on AlGaAsSb/InGaAsSb Quantum Well Nanoheterostructures

A. N. Imenkov, V. V. Sherstnev, E. A. Grebenshchikova, M. A. Sipovskaya,
M. I. Larchenkov, D. I. Tarasov, A. N. Baranov, and Yu. P. Yakovlev p. 355  abstract

Edge Inversion Channels and Surface Leakage Currents
in High-Voltage Semiconductor Devices

A. S. Kyuregyan p. 362  abstract

Laminated Grid Solar Cells (LGCells) on Multicrystalline Silicon.
Application of Atomic Hydrogen Treatment

G. G. Untila, T. N. Kost, A. B. Chebotareva, M. E. Belousov, V. A. Samorodov,
A. Yu. Poroykov, M. A. Timofeyev, M. B. Zaks, A. M. Sitnikov, and O. I. Solodukha p. 369  abstract

Optimization of the Configuration of a Symmetric Three-Barrier Resonant-Tunneling Structure
as an Active Element of a Quantum Cascade Detector

N. V. Tkach and Ju. A. Seti p. 376  abstract

HgCdTe Heterostructures on Si (310) Substrates for Midinfrared Focal Plane Arrays

M. V. Yakushev, D. V. Brunev, V. S. Varavin, V. V. Vasilyev, S. A. Dvoretskii,
I. V. Marchishin, A. V. Predein, I. V. Sabinina, Yu. G. Sidorov, and A. V. Sorochkin p. 385  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Characterization of Single-Crystal Diamond Grown from the Vapor Phase
on Substrates of Natural Diamond

A. A. Altukhov, A. L. Vikharev, A. M. Gorbachev, M. P. Dukhnovsky,
V. E. Zemlyakov, K. N. Ziablyuk, A. V. Mitenkin, A. B. Muchnikov, D. B. Radishev,
A. K. Ratnikova, and Yu. Yu. Fedorov p. 392  abstract

The Influence of Hydrogenation on the Electrical Properties
of the Cd_xHg_1–xTe Epitaxial Structures

V. S. Varavin, G. Yu. Sidorov, M. O. Garifullin, A. V. Vishnyakov, and Yu. G. Sidorov p. 397  abstract

Investigation of the Local Density of States in Self-Assembled GeSi/Si(001) Nanoislands
by Combined Scanning Tunneling and Atomic-Force Microscopy

P. A. Borodin, A. A. Bukharaev, D. O. Filatov, M. A. Isakov, V. G. Shengurov,
V. Yu. Chalkov, and Yu. A. Denisov p. 403  abstract

The Effect of Composition on the Formation of Light-Emitting Si Nanostructures
in SiO_x Layers on Irradiation with Swift Heavy Ions

G. A. Kachurin, S. G. Cherkova, D. V. Marin, V. G. Kesler, V. A. Skuratov, and A. G. Cherkov p. 408  abstract

Effect of the Silicon Doping Level and Features of Nanostructural Arrangement
on Decrease in External Quantum Efficiency in InGaN/GaN Light-Emitting Diodes
with Increasing Current

B. Ya. Ber, E. V. Bogdanova, A. A. Greshnov, A. L. Zakgeim, D. Yu. Kazanzev, A. P. Kartashova,
A. S. Pavluchenko, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, and E. B. Yakimov p.415  abstract

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