Contents
Semiconductors

Vol. 44, No. 3, 2010

A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Propertties of Semiconductors

Self-Diffusion Parameters in Carbon-Subgroup Crystals

M. N. Magomedov p. 271  abstract

Precipitation of Boron in Silicon on High-Dose Implantation

K. V. Feklistov, L. I. Fedina, and A. G. Cherkov p. 285  abstract

Electrical and Optical Properties of Semiconductors

Photoconductivity and Luminescence in GaSe Crystals at High Levels of Optical Excitation

A. G. Kyazym-zade, V. M. Salmanov, A. A. Salmanova, A. M. Alieva, and R. Z. Ibaeva p. 289  abstract

Features of an Intermetallic n-ZrNiSn Semiconductor Heavily Doped
with Atoms of Rare-Earth Metals

V. A. Romaka, D. Fruchart, E. K. Hlil, R. E. Gladyshevskii, D. Gignoux,
V. V. Romaka, B. S. Kuzhel, and R. V. Krayjvskii p. 293  abstract

Effect of Annealing on the Microwave Magnetoresistance of Thin Ge_0.96Mn_0.04 Films

A. I. Dmitriev, R. B. Morgunov, and O. L. Kazakova p. 303  abstract

Semiconductor Structures, Interfaces, and Surfaces

Reduction in Absorption in Quartz/Si, Quartz/Si/SiO₂,
and SiC/Si/SiO₂ Structures on Laser Treatment

V. N. Lissotschenko, R. V. Konakova, B. G. Konoplev, V. V. Kushnir,
O. B. Okhrimenko, and A. M. Svetlichnyi p. 309  abstract

Study of the Current–Voltage Characteristic
of the n-CdS/p-CdTe Heterostructure Depending on Temperature

Sh. N. Usmonov, Sh. A. Mirsagatov, and A. Yu. Leyderman p. 313  abstract

Photosensitivity of n-CdS/p-CdTe Heterojunctions Obtained
by Chemical Surface Deposition of CdS

G. A. Il’chuk, V. V. Kusnezh, V. Yu. Rud’, Yu. V. Rud’,
P. Yo. Shapowal, and R. Yu. Petrus’ p. 318  abstract

Emission Sensitization and Mechanisms of Electron-Excitation Migration
in Structures Based on III-Nitrides Doped with Rare-Earth Elements (Eu, Er, Sm)

M. M. Mezdrogina, E. Yu. Danilovsky, and R. V. Kuzmin p. 321  abstract

Low-Dimensional Systems

Effect of Irradiation on the Luminescence Properties
of Low-Dimensional SiGe/Si(001) Heterostructures

A. V. Novikov, A. N. Yablonskiy, V. V. Platonov, S. V. Obolenskiy,
D. N. Lobanov, and Z. F. Krasilnik p. 329  abstract

Observation of Localized Centers with Anomalous Behavior
in Light-Emitting Heterostructures with Multiple InGaN/GaN Quantum Wells

O. V. Kucherova, V. I. Zubkov, A. V. Solomonov, and D. V. Davydov p.335  abstract

The Form of the Profile of Heterointerfaces in (311)Ga GaAs/AlAs Structures

D. V. Gulyaev and K. S. Zhuravlev p. 341  abstract

Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites

Effect of Thermal Oxidation on Charge Carrier Transport in Nanostructured Silicon

E. A. Agafonova, M. N. Martyshov, P. A. Forsh,
V. Yu. Timoshenko, and P. K. Kashkarov p. 350  abstract

Polydisalicylidene Azomethyne/Si(GaAs) Heterojunctions:
Development and Properties

Yu. A. Nikolaev, V. Yu. Rud’, Yu. V. Rud’, E. I. Terukov, N. M. Heller,
A. G. Ivanov, and V. V. Shamanin p. 354  abstract

Physics of Semiconductor Devices

Reliability Estimate for Semiconductor Laser Module ILPN-134

O. V. Zhuravleva, A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov,
V. I. Romantsevich, and R. V. Chernov p. 359  abstract

Effect of Gold on the Properties
of Nitrogen Dioxide Sensors Based on Thin WO₃ Films

O. V. Anisimov, V. I. Gaman, N. K. Maksimova, Yu. P. Najden, V. A. Novikov,
E. Yu. Sevastyanov, F. V. Rudov, and E. V. Chernikov p. 366  abstract

A Study of Thermal Processes in High-Power InGaN/GaN Flip-Chip LEDs
by IR Thermal Imaging Microscopy

A. L. Zakgeim, G. L. Kuryshev, M. N. Mizerov, V. G. Polovinkin,
I. V. Rozhansky, and A. E. Chernyakov p. 373  abstract

Influence of Radiation Defects on Electrical Losses
in Silicon Diodes Irradiated With Electrons

N. A. Poklonski, N. I. Gorbachuk, S. V. Shpakovski, S. B. Lastovskii, and A. Wieck p. 380  abstract

Si:Er/Si Diode Structures for Observing Room-Temperature
Electroluminescence at a Wavelength of 1.54 m

V. P. Kuznetsov, M. V. Kuznetsov, and Z. F. Krasil’nik p. 385  abstract

Fabrication, Treatment, and Testing of Materials and Structures

A Technique for Characterizing Surface Recombination
in Silicon Wafers Based on Thermal-Emission Measurements

V. V. Bogatyrenko p. 392  abstract

Sublimation Molecular Beam Epitaxy of Silicon-Based Structures

V. P. Kuznetsov and Z. F. Krasil’nik p. 396  abstract

Secondary Cluster Ions and for Improving Depth Resolution
of SIMS Depth Profiling of GeSi/Si Heterostructures

M. N. Drozdov, Yu. N. Drozdov, D. N. Lobanov, A. V. Novikov, and D. V. Yurasov p. 401  abstract

GaAsSb/GaAs Strained Structures with Quantum Wells for Lasers
with Emission Wavelength near 1.3 m

Yu. G. Sadofyev, N. Samal, B. A. Andreev, V. I. Gavrilenko, S. V. Morozov,
A. G. Spivakov, and A. N. Yablonsky p.405  abstract

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