Contents
Semiconductors
Vol. 44, No. 3, 2010
A simultaneous English language translation of this journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.
Atomic Structure and Nonelectronic Propertties of Semiconductors
Self-Diffusion Parameters in Carbon-Subgroup Crystals
M. N. Magomedov p. 271 abstract
Precipitation of Boron in Silicon on High-Dose Implantation
K. V. Feklistov, L. I. Fedina, and A. G. Cherkov p. 285 abstract
Electrical and Optical Properties of Semiconductors
Photoconductivity and Luminescence in GaSe Crystals at High Levels of Optical Excitation
A. G. Kyazym-zade, V. M. Salmanov, A. A. Salmanova, A. M. Alieva, and R. Z. Ibaeva p. 289 abstract
Features of an Intermetallic n-ZrNiSn Semiconductor Heavily Doped
with Atoms of Rare-Earth Metals
V. A. Romaka, D. Fruchart, E. K. Hlil, R. E. Gladyshevskii, D. Gignoux,
V. V. Romaka, B. S. Kuzhel, and R. V. Krayjvskii p. 293 abstract
Effect of Annealing on the Microwave Magnetoresistance of Thin Ge0.96Mn0.04 Films
A. I. Dmitriev, R. B. Morgunov, and O. L. Kazakova p. 303 abstract
Semiconductor Structures, Interfaces, and Surfaces
Reduction in Absorption in Quartz/Si, Quartz/Si/SiO2,
and SiC/Si/SiO2 Structures on Laser Treatment
V. N. Lissotschenko, R. V. Konakova, B. G. Konoplev, V. V. Kushnir,
O. B. Okhrimenko, and A. M. Svetlichnyi p. 309 abstract
Study of the CurrentVoltage Characteristic
of the n-CdS/p-CdTe Heterostructure Depending on Temperature
Sh. N. Usmonov, Sh. A. Mirsagatov, and A. Yu. Leyderman p. 313 abstract
Photosensitivity of n-CdS/p-CdTe Heterojunctions Obtained
by Chemical Surface Deposition of CdS
G. A. Ilchuk, V. V. Kusnezh, V. Yu. Rud, Yu. V. Rud,
P. Yo. Shapowal, and R. Yu. Petrus p. 318 abstract
Emission Sensitization and Mechanisms of Electron-Excitation Migration
in Structures Based on III-Nitrides Doped with Rare-Earth Elements (Eu, Er, Sm)
M. M. Mezdrogina, E. Yu. Danilovsky, and R. V. Kuzmin p. 321 abstract
Low-Dimensional Systems
Effect of Irradiation on the Luminescence Properties
of Low-Dimensional SiGe/Si(001) Heterostructures
A. V. Novikov, A. N. Yablonskiy, V. V. Platonov, S. V. Obolenskiy,
D. N. Lobanov, and Z. F. Krasilnik p. 329 abstract
Observation of Localized Centers with Anomalous Behavior
in Light-Emitting Heterostructures with Multiple InGaN/GaN Quantum Wells
O. V. Kucherova, V. I. Zubkov, A. V. Solomonov, and D. V. Davydov p.335 abstract
The Form of the Profile of Heterointerfaces in (311)Ga GaAs/AlAs Structures
D. V. Gulyaev and K. S. Zhuravlev p. 341 abstract
Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites
Effect of Thermal Oxidation on Charge Carrier Transport in Nanostructured Silicon
E. A. Agafonova, M. N. Martyshov, P. A. Forsh,
V. Yu. Timoshenko, and P. K. Kashkarov p. 350 abstract
Polydisalicylidene Azomethyne/Si(GaAs) Heterojunctions:
Development and Properties
Yu. A. Nikolaev, V. Yu. Rud, Yu. V. Rud, E. I. Terukov, N. M. Heller,
A. G. Ivanov, and V. V. Shamanin p. 354 abstract
Physics of Semiconductor Devices
Reliability Estimate for Semiconductor Laser Module ILPN-134
O. V. Zhuravleva, A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov,
V. I. Romantsevich, and R. V. Chernov p. 359 abstract
Effect of Gold on the Properties
of Nitrogen Dioxide Sensors Based on Thin WO3 Films
O. V. Anisimov, V. I. Gaman, N. K. Maksimova, Yu. P. Najden, V. A. Novikov,
E. Yu. Sevastyanov, F. V. Rudov, and E. V. Chernikov p. 366 abstract
A Study of Thermal Processes in High-Power InGaN/GaN Flip-Chip LEDs
by IR Thermal Imaging Microscopy
A. L. Zakgeim, G. L. Kuryshev, M. N. Mizerov, V. G. Polovinkin,
I. V. Rozhansky, and A. E. Chernyakov p. 373 abstract
Influence of Radiation Defects on Electrical Losses
in Silicon Diodes Irradiated With Electrons
N. A. Poklonski, N. I. Gorbachuk, S. V. Shpakovski, S. B. Lastovskii, and A. Wieck p. 380 abstract
Si:Er/Si Diode Structures for Observing Room-Temperature
Electroluminescence at a Wavelength of 1.54 m
V. P. Kuznetsov, M. V. Kuznetsov, and Z. F. Krasilnik p. 385 abstract
Fabrication, Treatment, and Testing of Materials and Structures
A Technique for Characterizing Surface Recombination
in Silicon Wafers Based on Thermal-Emission Measurements
V. V. Bogatyrenko p. 392 abstract
Sublimation Molecular Beam Epitaxy of Silicon-Based Structures
V. P. Kuznetsov and Z. F. Krasilnik p. 396 abstract
Secondary Cluster Ions and
for Improving Depth Resolution
of SIMS Depth Profiling of GeSi/Si Heterostructures
M. N. Drozdov, Yu. N. Drozdov, D. N. Lobanov, A. V. Novikov, and D. V. Yurasov p. 401 abstract
GaAsSb/GaAs Strained Structures with Quantum Wells for Lasers
with Emission Wavelength near 1.3 m
Yu. G. Sadofyev, N. Samal, B. A. Andreev, V. I. Gavrilenko, S. V. Morozov,
A. G. Spivakov, and A. N. Yablonsky p.405 abstract
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