Contents
Semiconductors

Vol. 42, No. 2, 2008

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Phase Composition of Films in a Bi–S System and Formation of Bi₂S₃ Films
with Different Substructures

G. M. Akhmedov p. 129  abstract

Electronic and Optical Properties of Semiconductors

Role of Background O and Cu Impurities in the Optics of ZnSe Crystals
in the Context of the Band Anticrossing Model

N. K. Morozova, D. A. Mideros, E. M. Gavrishchuk, and V. G. Galstyan p. 131  abstract

Electrical Properties of Si:Er/Si Layers Grown by Sublimation Molecular-Beam Epitaxy

O. V. Belova, V. N. Shabanov, A. P. Kasatkin, O. A. Kuznetsov, A. N. Yablonski,
M. V. Kuznetsov, V. P. Kuznetsov, A. V. Kornaukhov, B. A. Andreev, and Z. F. Krasil’nik p. 137  abstract

Bistable Amphoteric Centers in Semiconductors

A. G. Nikitina and V. V. Zuev p. 142  abstract

Photosensitivity of Pb_1–xSn_xTe:In Films in the Region of Intrinsic Absorption

A. É. Klimov and V. N. Shumski p. 149  abstract

Optical Properties of AgGa_xIn_1–xSe₂ Alloys

I. V. Bodnar’ p. 156  abstract

Spatial Distribution of Defects and the Kinetics of Nonequilibrium Charge Carriers
in GaN Wurtzite Crystals Doped with Sm, Eu, Er, Tm, and Supplementary Zn Impurities

M. M. Mezdrogina, V. V. Krivolapchuk, and Yu. V. Kozhanova p. 159  abstract

Ionization of the Sulfur-Related DX Center in In_1–xGa_xP in an Electric Field

Yu. K. Krutogolov p. 173  abstract

Semiconductor Structures, Interfaces, and Surfaces

Stimulated Radiation of Optically Pumped Cd_xHg_1–xTe-Based Heterostructures
at Room Temperature

A. A. Andronov, Yu. N. Nozdrin, A. V. Okomel’kov, A. A. Babenko, V. S. Varavin,
D. G. Ikusov, and R. N. Smirnov p. 179  abstract

Low-Dimensional Systems

Effect of High-Power Nanosecond and Femtosecond Laser Pulses on Silicon Nanostructures

G. A. Kachurin, S. G. Cherkova, V. A. Volodin, D. V. Marin, and M. Deutschmann p. 183  abstract

Photoluminescence of Localized Excitons in InGaN Quantum Dots

S. O. Usov, A. F. Tsatsul’nikov, V. V. Lundin, A. V. Sakharov,
E. E. Zavarin, and N. N. Ledentsov p. 188  abstract

Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors;
Semiconductor Composites

Photoconductivity of Thin a-Si:H Films

A. G. Kazanski, O. G. Koshelev, A. Yu. Sazonov, and A. A. Khomich p. 192  abstract

Optical Studies of AlN/n-Si(100) Films Obtained by the Method
of High-Frequency Magnetron Sputtering

N. S. Zayats, V. G. Boko, P. A. Gentsar, O. S. Litvin, V. P. Papusha, and N. V. Sopinski p. 195  abstract

Study of the Conductance of Ultrathin Tin Diphthalocyanine Films

N. L. Levshin, N. N. Pronin, P. A. Forsh, and S. G. Yudin p. 199  abstract

Variation in Optical-Absorption Edge in SiN_x Layers with Silicon Clusters

M. D. Efremov, V. A. Volodin, D. V. Marin, S. A. Arzhannikova, G. N. Kamaev,
S. A. Kochube, and A. A. Popov p. 202  abstract

Some Aspects of Selection of Impurities Improving Photoelectric Characteristics
of Chalcogenide Vitreous Semiconductors

I. I. Burdiyan, V. V. Cosiuc, and R. A. Pynzar’ p. 208  abstract

Physics of Semiconductor Devices

High-Voltage (900 V) 4H-SiC Schottky Diodes with a Boron-Implanted Guard p–n Junction

I. V. Grekhov, P. A. Ivanov, N. D. Il’inskaya, O. I. Kon’kov,
A. S. Potapov, and T. P. Samsonova p. 211  abstract

Decrease in Effective Electron Mobility in the Channel
of a Metal-Oxide-Semiconductor Transistor as the Gate Length Is Decreased

A. A. Frantsuzov, N. I. Boyarkina, and V. P. Popov p. 215  abstract

Effect of Auger Recombination on the Thermal Stability
of High-Voltage High-Power Semiconductor Diodes

T. T. Mnatsakanov, M. E. Levinshten, and A. S. Fredlin p. 220  abstract

Optical Parameters of Diode Lasers Based on an InAsSb/InAsSbP Heterostructure

A. P. Astakhova, T. V. Bez”yazychnaya, L. I. Burov, A. S. Gorbatsevich,
A. G. Ryabtsev, G. I. Ryabtsev, M. A. Shchemelev, and Yu. P. Yakovlev p. 228  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Effect of Hydrogen on Anisotropy of the p-GaN Growth Rate in the Case of Side-Wall MOCVD

W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, and A. F. Tsatsul’nikov p. 232  abstract

Diffusion of Chromium into Epitaxial Gallium Arsenide

M. D. Vilisova, E. P. Drugova, I. V. Ponomarev, and V. A. Chubirko p. 238  abstract

Effect of Electron Irradiation on Carrier Removal Rate in Silicon
and Silicon Carbide with 4H Modification

V. V. Kozlovski, V. V. Emtsev, K. V. Emtsev, N. B. Strokan, A. M. Ivanov,
V. N. Lomasov, G. A. Oganesyan, and A. A. Lebedev p. 242  abstract

Rules for the Authors p. 248

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