Contents
Semiconductors


Vol. 41, No. 2, 2007

Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.


Atomic Structure and Nonelectronic Properties of Semiconductors

Self-ordering of Mg and O Isoelectronic Impurities in ZnSe

O. V. Elyukhina, G. S. Sokolovskii, and V. I. Kuchinskii p. 125  abstract


Electronic and Optical Properties of Semiconductors

Mechanisms of Recombination of Nonequilibrium Charge Carriers
in Epitaxial CdxHg1–xTe (x = 0.20–0.23) Layers

D. G. Ikusov, F. F. Sizov, S. V. Staryframe0, and V. V. Teterkin p. 130  abstract

Microphotoluminescence of Undoped Cadmium Telluride Grown
by Nonequilibrium Direct Synthesis from the Flow of Components’ Vapors

V. V. Ushakov and Yu. V. Klevkov p. 136  abstract

Superconducting States of Lead Nanoinclusions in the Stoichiometric PbTe Matrix

L. A. Darchuk, S. D. Darchuk, F. F. Sizov, and A. G. Golenkov p. 140  abstract

Resonant Gallium Level in Pb1–xSnxTe Alloys under Pressure

E. P. Skipetrov, A. V. Golubev, and V. E. Slyn’ko p. 145  abstract


Semiconductor Structures, Interfaces, and Surfaces

Electrical Properties of Isotype N+-GaSb/n0-GaInAsSb/N+-GaAlAsSb Type-II Heterojunctions

M. A. Ahmetoglu (Afrailov), I. A. Andreev, E. V. Kunitsyna, M. P. Mikhailova, and Yu. P. Yakovlev p. 150  abstract

Fabrication and Photoelectric Properties of Oxide/CuIn5Se8 Heterojunctions

I. V. Bodnar’, A. A. Vaframe1polin, V. Yu. Rud’, Yu. V. Rud’, and E. I. Terukov p. 155  abstract

The Effect of Surface Passivation on the Intrinsic Photoconductivity
of Gallium Phosphide Compensated with Copper

A. A. Kozhevnikov and N. N. Pribylov p. 159  abstract

Transition from the Type-II Broken-Gap Heterojunction to the Staggered One
in the GaInAsSb/lnAs(GaSb) System

M. P. Mikhailova, K. D. Moiseev, T. I. Voronina, T. S. Lagunova, and Yu. P. Yakovlev p. 161  abstract


Low-Dimensional Systems

Effect of Tensile-Strained Si Layer on Photoluminescence
of Ge(Si) Self-Assembled Islands Grown on Relaxed SiGe/Si(001) Buffer Layers

M. V. Shaleev, A. V. Novikov, A. N. Yablonskiframe2, O. A. Kuznetsov,
Yu. N. Drozdov, and Z. F. Krasil’nik
p. 167  abstract

Photoluminescence of Germanium Quantum Dots Formed by Pulsed Laser Ablation

É. B. Kaganovich, É. G. Manoilov, and E. V. Begun p. 172  abstract

Luminescence of Zinc Oxide Nanorods

G. A. Emel’chenko, A. N. Gruzintsev, A. B. Kulakov, É. N. Samarov, I. A. Karpov,
A. N. Red’kin, E. E. Yakimov, and C. Barthou
p. 176  abstract

Properties of 2D Electron Gas in AlGaAs/GaAs Heterojunctions with Thin AlGaAs Layers

D. A. Kozlov, Z. D. Kvon, A. K. Kalagin, and A. I. Toropov p. 180  abstract

Dielectric Function of Quasi-2D Semiconductor Nanostructures

N. L. Bazhenov, K. D. Mynbaev, and G. G. Zegrya p. 184  abstract

Computer Study of Physical Properties of Silicon Nanostructures

A. E. Galashev, I. A. Izmodenov, A. N. Novruzov, and O. A. Novruzova p. 190  abstract

Resonances Related to an Array of InAs Quantum Dots
and Controlled by an External Electric Field

V. G. Talalaev, B. V. Novikov, A. S. Sokolov, I. V. Strom, J. W. Tomm, N. D. Zakharov,
P. Werner, G. E. Cirlin, and A. A. Tonkikh
p. 197  abstract

Mechanism of the Effect of the Electric Field of a Surface Acoustic Wave
on the Low-Temperature Photoluminescence Kinetics in Type-II GaAs/AlAs Superlattices

D. V. Gulyaev and K. S. Zhuravlev p. 205  abstract


Physics of Semiconductor Devices

Control over Carrier Lifetime in High-Voltage pin Diodes Based
on InxGa1–xAs/GaAs Heterostructures

F. Yu. Soldatenkov, V. G. Danil’chenko, and V. I. Korol’kov p. 211  abstract

Superconducting Tunneling-Junction Detectors of X-ray Radiation.
Issues Concerning the Energy Resolution

V. A. Andrianov, V. P. Gor’kov, V. P. Koshelets, and L. V. Filippenko p. 215  abstract

Silicon Photodiode with a Grid pn Junction

V. I. Blynskii, Yu. G. Vasileuskii, S. A. Malyshev, and A. L. Chizh p. 223  abstract

Sequential Mechanism of Electron Transport
in the Resonant Tunneling Diode with Thick Barriers

N. V. Alkeev, S. V. Averin, A. A. Dorofeev, P. Velling, E. Khorenko,
W. Prost, and F. J. Tegude
p. 227  abstract

Electron Transport and Detection of Terahertz Radiation
in a GaN/AlGaN Submicrometer Field-Effect Transistor

V. I. Gavrilenko, E. V. Demidov, K. V. Marem’yanin, S. V. Morozov,
W. Knap, and J. Lusakowski
p. 232  abstract

EBIC Study of Resistive Photosensitive Elements Based on HgCdTe

P. S. Vergeles, V. V. Krapukhin, and E. B. Yakimov p. 235  abstract


Personalia

Anatoliframe3 Grigor’evich Samoframe4lovich (1906–2006) (On the Centenary of His Birth) p. 240


Rules for the Authors p. 242

Information for Authors p. 245


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