Contents
Semiconductors
Vol. 41, No. 2, 2007
Simultaneous English language translation of the journal is available from Pleiades Publishing, Ltd.
Distributed worldwide by Springer. Semiconductors ISSN 1063-7826.
Atomic Structure and Nonelectronic Properties of Semiconductors
Self-ordering of Mg and O Isoelectronic Impurities in ZnSe
O. V. Elyukhina, G. S. Sokolovskii, and V. I. Kuchinskii p. 125 abstract
Electronic and Optical Properties of Semiconductors
Mechanisms of Recombination of Nonequilibrium Charge Carriers
in Epitaxial CdxHg1xTe (x = 0.200.23) Layers
D. G. Ikusov, F. F. Sizov, S. V. Stary, and V. V. Teterkin p. 130 abstract
Microphotoluminescence of Undoped Cadmium Telluride Grown
by Nonequilibrium Direct Synthesis from the Flow of Components Vapors
V. V. Ushakov and Yu. V. Klevkov p. 136 abstract
Superconducting States of Lead Nanoinclusions in the Stoichiometric PbTe Matrix
L. A. Darchuk, S. D. Darchuk, F. F. Sizov, and A. G. Golenkov p. 140 abstract
Resonant Gallium Level in Pb1xSnxTe Alloys under Pressure
E. P. Skipetrov, A. V. Golubev, and V. E. Slynko p. 145 abstract
Semiconductor Structures, Interfaces, and Surfaces
Electrical Properties of Isotype N+-GaSb/n0-GaInAsSb/N+-GaAlAsSb Type-II Heterojunctions
M. A. Ahmetoglu (Afrailov), I. A. Andreev, E. V. Kunitsyna, M. P. Mikhailova, and Yu. P. Yakovlev p. 150 abstract
Fabrication and Photoelectric Properties of Oxide/CuIn5Se8 Heterojunctions
I. V. Bodnar, A. A. Vapolin, V. Yu. Rud, Yu. V. Rud, and E. I. Terukov p. 155 abstract
The Effect of Surface Passivation on the Intrinsic Photoconductivity
of Gallium Phosphide Compensated with Copper
A. A. Kozhevnikov and N. N. Pribylov p. 159 abstract
Transition from the Type-II Broken-Gap Heterojunction to the Staggered One
in the GaInAsSb/lnAs(GaSb) System
M. P. Mikhailova, K. D. Moiseev, T. I. Voronina, T. S. Lagunova, and Yu. P. Yakovlev p. 161 abstract
Low-Dimensional Systems
Effect of Tensile-Strained Si Layer on Photoluminescence
of Ge(Si) Self-Assembled Islands Grown on Relaxed SiGe/Si(001) Buffer Layers
M. V. Shaleev, A. V. Novikov, A. N. Yablonski, O. A. Kuznetsov,
Yu. N. Drozdov, and Z. F. Krasilnik p. 167 abstract
Photoluminescence of Germanium Quantum Dots Formed by Pulsed Laser Ablation
É. B. Kaganovich, É. G. Manoilov, and E. V. Begun p. 172 abstract
Luminescence of Zinc Oxide Nanorods
G. A. Emelchenko, A. N. Gruzintsev, A. B. Kulakov, É. N. Samarov, I. A. Karpov,
A. N. Redkin, E. E. Yakimov, and C. Barthou p. 176 abstract
Properties of 2D Electron Gas in AlGaAs/GaAs Heterojunctions with Thin AlGaAs Layers
D. A. Kozlov, Z. D. Kvon, A. K. Kalagin, and A. I. Toropov p. 180 abstract
Dielectric Function of Quasi-2D Semiconductor Nanostructures
N. L. Bazhenov, K. D. Mynbaev, and G. G. Zegrya p. 184 abstract
Computer Study of Physical Properties of Silicon Nanostructures
A. E. Galashev, I. A. Izmodenov, A. N. Novruzov, and O. A. Novruzova p. 190 abstract
Resonances Related to an Array of InAs Quantum Dots
and Controlled by an External Electric Field
V. G. Talalaev, B. V. Novikov, A. S. Sokolov, I. V. Strom, J. W. Tomm, N. D. Zakharov,
P. Werner, G. E. Cirlin, and A. A. Tonkikh p. 197 abstract
Mechanism of the Effect of the Electric Field of a Surface Acoustic Wave
on the Low-Temperature Photoluminescence Kinetics in Type-II GaAs/AlAs Superlattices
D. V. Gulyaev and K. S. Zhuravlev p. 205 abstract
Physics of Semiconductor Devices
Control over Carrier Lifetime in High-Voltage pin Diodes Based
on InxGa1xAs/GaAs Heterostructures
F. Yu. Soldatenkov, V. G. Danilchenko, and V. I. Korolkov p. 211 abstract
Superconducting Tunneling-Junction Detectors of X-ray Radiation.
Issues Concerning the Energy Resolution
V. A. Andrianov, V. P. Gorkov, V. P. Koshelets, and L. V. Filippenko p. 215 abstract
Silicon Photodiode with a Grid pn Junction
V. I. Blynskii, Yu. G. Vasileuskii, S. A. Malyshev, and A. L. Chizh p. 223 abstract
Sequential Mechanism of Electron Transport
in the Resonant Tunneling Diode with Thick Barriers
N. V. Alkeev, S. V. Averin, A. A. Dorofeev, P. Velling, E. Khorenko,
W. Prost, and F. J. Tegude p. 227 abstract
Electron Transport and Detection of Terahertz Radiation
in a GaN/AlGaN Submicrometer Field-Effect Transistor
V. I. Gavrilenko, E. V. Demidov, K. V. Maremyanin, S. V. Morozov,
W. Knap, and J. Lusakowski p. 232 abstract
EBIC Study of Resistive Photosensitive Elements Based on HgCdTe
P. S. Vergeles, V. V. Krapukhin, and E. B. Yakimov p. 235 abstract
Personalia
Anatoli
Grigorevich Samo
lovich
(19062006) (On the Centenary of His Birth) p. 240
Rules for the Authors p. 242
Information for Authors p. 245
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