Contents
Semiconductors

Vol. 39, No. 2, 2005

Simultaneous English language translation of the journal is available from Pleiades Publishing, Inc.
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Electronic and Optical Properties of Semiconductors

Ab initio Studies of the Band Parameters of III–V and II–VI Zinc-Blende Semiconductors

S. Zh. Karazhanov and L. C. Lew Yan Voon p. 161  abstract

Photoreflection Studies of the Dopant Activation in InP Implanted with Be⁺ Ions

L. P. Avakyants, P. Yu. Bokov, and A. V. Chervyakov p. 174  abstract

The Effect of Current Pulse Annealing on the Electrical Properties of Polycrystalline p-Si

V. A. Gridchin and V. M. Lubimski p. 177  abstract

Spectroscopic Study of Ga-Doped Ge under Uniaxial Pressure

Ya. E. Pokrovski and N. A. Khval’kovski p. 182  abstract

Semiconductor Structures, Interfaces, and Surfaces

The Effect of Laser Radiation on the Formation of Oriented Cadmium Sulfide Layers
under Highly Nonequilibrium Conditions

A. P. Belyaev, V. P. Rubets, and V. V. Antipov p. 189  abstract

Scattering of Charge Carriers at the Boundaries of Crystallites in Films of Polycrystalline Silicon

V. A. Gridchin, V. M. Lyubimski, and A. G. Moiseev p. 192  abstract

The Influence of a Nonlinear Electromagnetic Wave on Electric Current Density
in a Surface Superlattice in a Strong Electric Field

D. V. Zav’yalov, S. V. Kryuchkov, and N. E. Meshcheryakova p. 198  abstract

Fabrication and Photoelectric Properties of the ZnO–Cu(In,Ga)Se₂ Heterojunctions

V. F. Gremenok, G. A. Il’chuk, S. E. Nikitin, V. Yu. Rud’, and Yu. V. Rud’ p. 202  abstract

The Qualitative Difference between Mechanisms of Electroforming
in Si–SiO₂–W Structures Based on n-Si and p-Si

V. M. Mordvintsev, S. E. Kudryavtsev, and V. L. Levin p. 206  abstract

Luminescence of Multilayer Structures Based on InAsSb at = 6–9 m

N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remenny,
N. M. Stus’, and N. G. Tarakanova p. 214  abstract

Photovoltaic Properties of n-ZnO:Al/PbPc/p-Si Structures

G. A. Il’chuk, S. E. Nikitin, Yu. A. Nikolaev, V. Yu. Rud’, Yu. V. Rud’, and E. I. Terukov p. 218  abstract

Low-Dimensional Systems

Nonohmic Conductance and Mechanisms of Energy Relaxation in 2D Electron Gas
in GaAs/InGaAs/GaAs Heterostructures

A. A. Sherstobitov, G. M. Min’kov, O. E. Rut, A. V. Germanenko, and B. N. Zvonkov p. 221  abstract

Special Features of the Electron–Electron Interaction in the Potential
of a Heavily Doped Al_xGa_1–xAs:Si/GaAs Heterojunction

V. I. Kadushkin p. 226  abstract

The Effect of Thickness Fluctuations on the Static Electrical Conductivity
of a Semiconductor Quantum Wire

M. A. Ruvinski and B. M. Ruvinski p. 231  abstract

Selective Electron Transfer between Quantum Dots Induced by a Resonance Pulse

L. A. Openov and A. V. Tsukanov p. 235  abstract

Optical Properties of Porous Nanosized GaAs

A. I. Belogorokhov, S. A. Gavrilov, I. A. Belogorokhov, and A. A. Tikhomirov p. 243  abstract

Kinetics and Inhomogeneous Carrier Injection in InGaN Nanolayers

D. S. Sizov, V. S. Sizov, E. E. Zavarin, V. V. Lundin, A. V. Fomin,
A. F. Tsatsul’nikov, and N. N. Ledentsov p. 249  abstract

Amorphous, Vitreous, and Porous Semiconductors

Electrical Characteristics of Insulator–Conductor and Insulator–Semiconductor Macrosystems

V. A. Sotskov p. 254  abstract

On the Injection Current Mechanism in Light-Emitting p–i–n Structures Based
on a-Si_1–xC_x:H Hydrogenated Amorphous Alloys

A. A. Andreev p. 261  abstract

Physics of Semiconductor Devices

A Graded-Gap Photoelectric Detector for Ionizing Radiation

L. Dapkus, K. Poela, J. Poela, A. ilnas, V. Jucien, and V. Jasutis p. 265  abstract

Ammonia Sensors Based on Pd–n-Si Diodes

V. I. Balyuba, V. Yu. Grisyk, T. A. Davydova, V. M. Kalygina, S. S. Nazarov, and L. S. Khludkova p. 269  abstract

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