Contents
Semiconductors

Vol. 37, No. 2, 2003

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Special Features of Structural Defects in Undoped CdTe Textured Ingots Produced
by Free Growth from a Gasdynamic Vapor Flow

Yu. V. Klevkov, V. P. Martovitskii, and S. A. Medvedev p. 119  abstract

Self-Organization of Laser-Induced Point Defects at the Initial Stages
of Inelastic Photodeformation in Germanium

S. V. Vintsents, A. V. Zaitseva, and G. S. Plotnikov p. 124  abstract

Photoinduced Annealing of Metastable Defects in Boron-Doped a-Si:H Films

I. A. Kurova, N. N. Ormont, and A. L. Gromadin p. 131  abstract

Electronic snd Optical Properties of Semiconductors

Anomalies in Static and Dynamic Conductivity of Indium Monoselenide

G. V. Lashkarev, A. I. Dmitriev, A. A. Bada, Z. D. Kovalyuk,
M. V. Kondrin, and A. A. Pronin p. 134  abstract

The U Peak in the DLTS Spectra of n-GaAs Irradiated with Fast Neutrons
and 65-MeV Protons

V. N. Brudny and V. V. Peshev p. 140  abstract

Inversion of Conductivity Type in ZnSe Single Crystals Obtained
by the Method of Free Growth

Yu. F. Vaksman, Yu. A. Nitsuk, Yu. N. Purtov, and P. V. Shapkin p. 145  abstract

Specific Features of Determination of the Concentrations of Shallow-Level Impurities
in Semiconductors from Analysis of Edge-Luminescence Spectra

K. D. Glinchuk and A. V. Prokhorovich p. 148  abstract

Classification of Frequencies of the Shubnikov–de Haas Oscillations
in Layered Charge-Ordered Crystals under Magnetic Breakdown

P. V. Gorskyi p. 156  abstract

On the Experimental Data Processing of Magnetoresistance Oscillations
in Two-Dimensional Electron Gas

N. S. Averkiev, A. M. Monakhov, N. I. Sablina, and P. M. Koenraad p. 160  abstract

Electrical Properties of FeIn₂Se₄ Single Crystals

N. N. Niftiev, M. A. Alidzhanov, O. B. Tagiev, and M. B. Muradov p. 165  abstract

An Impurity Band in Hg₃In₂Te₆ Crystals Doped with Silicon

P. N. Gorle and O. G. Grushka p. 168  abstract

Semiconductor Structures, Interfaces, and Surfaces

Electrical Properties of the p⁺-Bi₂Te₃–p-GaSe Isotype Heterostructure

S. I. Drapak, V. A. Manasson, V. V. Netyaga, and Z. D. Kovalyuk p. 172  abstract

Fabrication and Properties of Photosensitive Structures Based on ZnIn₂S₄ Single Crystals

A. A. Vapolin, Yu. A. Nikolaev, V. Yu. Rud’, Yu. V. Rud’,
E. I. Terukov, and N. Fernelius p. 178  abstract

Charge Transport in Fe–p-InP Diode Structures

S. V. Slobodchikov, Kh. M. Salikhov, and B. E. Samorukov p. 183  abstract

Barrier Formation in a Heterostructure Formed of Native Oxide and p-InSe.
Electrical and Photoelectrical Properties

S. I. Drapak, V. B. Orletskii, Z. D. Kovalyuk, and V. V. Netyaga p. 187  abstract

Low-Dimensional Systems

Segregation of Indium in InGaAs/GaAs Quantum Wells Grown
by Vapor-Phase Epitaxy

Yu. N. Drozdov, N. V. Badus’, B. N. Zvonkov, M. N. Drozdov,
O. I. Khrykin, and V. I. Shashkin p. 194  abstract

Rashba Effect in Inversion and Accumulation InAs layers

V. F. Radantsev, I. M. Ivankiv, and A. M. Yafyasov p. 200  abstract

Photoluminescence from Germanium Quantum Wells and Quantum Dots
in Silicon Grown by MBE at Low Temperature

T. M. Burbaev, V. A. Kurbatov, A. O. Pogosov, M. M. Rzaev, and N. N. Sibel’din p. 207  abstract

Optical Properties of Structures with Ultradense Arrays of Ge QDs in an Si Matrix

A. G. Makarov, N. N. Ledentsov, A. F. Tsatsul’nikov, G. E. Cirlin,
V. A. Egorov, V. M. Ustinov, N. D. Zakharov, and P. Werner p. 210  abstract

Population Inversion between Subbands in Quantum Wells
under the Conditions of –L Intervalley Transfer

V. Ya. Aleshkin, A. A. Andronov, and A. A. Dubinov p. 215  abstract

Amorphous, Vitreous, and Porous Semiconductors

Synthesis of New Carbon–Nitrogen Nanoclusters
by Annealing Diamond-Like Carbon Films in Nitrogen

I. A. Faizrakhmanov, V. V. Bazarov, N. V. Kurbatova,
I. B. Khaibullin, and A. L. Stepanov p. 220  abstract

Effect of Thermal Annealing on Optical and Photoelectric Properties
of Microcrystalline Hydrogenated Silicon Films

A. G. Kazanski, H. Mell, and P. A. Forsh p. 224  abstract

Physics of Semiconductor Devices

Electrical Properties of Surface-Barrier Diodes Based on CdZnTe

L. A. Kosyachenko, I. M. Rarenko, Z. I. Zakharchuk, V. M. Sklyarchuk,
E. F. Sklyarchuk, I. V. Solonchuk, I. S. Kabanova, and E. L. Maslyanchuk p. 227  abstract

Internal Quantum Efficiency of Stimulated Emission
of ( = 1.55 m) InGaAsP/InP Laser Diodes

G. V. Skrynnikov, G. G. Zegrya, N. A. Pikhtin,
S. O. Slipchenko, V. V. Shamakhov, and I. S. Tarasov p. 233  abstract

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