Contents
Semiconductors
Vol. 37, No. 2, 2003
Simultaneous English language translation of the journal is available from MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.
Atomic Structure and Nonelectronic Properties of Semiconductors
Special Features of Structural Defects in Undoped CdTe Textured Ingots Produced
by Free Growth from a Gasdynamic Vapor Flow
Yu. V. Klevkov, V. P. Martovitskii, and S. A. Medvedev p. 119 abstract
Self-Organization of Laser-Induced Point Defects at the Initial Stages
of Inelastic Photodeformation in Germanium
S. V. Vintsents, A. V. Zaitseva, and G. S. Plotnikov p. 124 abstract
Photoinduced Annealing of Metastable Defects in Boron-Doped a-Si:H Films
I. A. Kurova, N. N. Ormont, and A. L. Gromadin p. 131 abstract
Electronic snd Optical Properties of Semiconductors
Anomalies in Static and Dynamic Conductivity of Indium Monoselenide
G. V. Lashkarev, A. I. Dmitriev, A. A. Bada, Z. D. Kovalyuk,
M. V. Kondrin, and A. A. Pronin p. 134 abstract
The U Peak in the DLTS Spectra of n-GaAs Irradiated with Fast Neutrons
and 65-MeV Protons
V. N. Brudnyand V. V. Peshev p. 140 abstract
Inversion of Conductivity Type in ZnSe Single Crystals Obtained
by the Method of Free Growth
Yu. F. Vaksman, Yu. A. Nitsuk, Yu. N. Purtov, and P. V. Shapkin p. 145 abstract
Specific Features of Determination of the Concentrations of Shallow-Level Impurities
in Semiconductors from Analysis of Edge-Luminescence Spectra
K. D. Glinchuk and A. V. Prokhorovich p. 148 abstract
Classification of Frequencies of the Shubnikovde Haas Oscillations
in Layered Charge-Ordered Crystals under Magnetic Breakdown
P. V. Gorskyi p. 156 abstract
On the Experimental Data Processing of Magnetoresistance Oscillations
in Two-Dimensional Electron Gas
N. S. Averkiev, A. M. Monakhov, N. I. Sablina, and P. M. Koenraad p. 160 abstract
Electrical Properties of FeIn2Se4 Single Crystals
N. N. Niftiev, M. A. Alidzhanov, O. B. Tagiev, and M. B. Muradov p. 165 abstract
An Impurity Band in Hg3In2Te6 Crystals Doped with Silicon
P. N. Gorleand O. G. Grushka p. 168 abstract
Semiconductor Structures, Interfaces, and Surfaces
Electrical Properties of the p+-Bi2Te3p-GaSe Isotype Heterostructure
S. I. Drapak, V. A. Manasson, V. V. Netyaga, and Z. D. Kovalyuk p. 172 abstract
Fabrication and Properties of Photosensitive Structures Based on ZnIn2S4 Single Crystals
A. A. Vapolin, Yu. A. Nikolaev, V. Yu. Rud, Yu. V. Rud,
E. I. Terukov, and N. Fernelius p. 178 abstract
Charge Transport in Fep-InP Diode Structures
S. V. Slobodchikov, Kh. M. Salikhov, and B. E. Samorukov p. 183 abstract
Barrier Formation in a Heterostructure Formed of Native Oxide and p-InSe.
Electrical and Photoelectrical Properties
S. I. Drapak, V. B. Orletskii, Z. D. Kovalyuk, and V. V. Netyaga p. 187 abstract
Low-Dimensional Systems
Segregation of Indium in InGaAs/GaAs Quantum Wells Grown
by Vapor-Phase Epitaxy
Yu. N. Drozdov, N. V. Badus, B. N. Zvonkov, M. N. Drozdov,
O. I. Khrykin, and V. I. Shashkin p. 194 abstract
Rashba Effect in Inversion and Accumulation InAs layers
V. F. Radantsev, I. M. Ivankiv, and A. M. Yafyasov p. 200 abstract
Photoluminescence from Germanium Quantum Wells and Quantum Dots
in Silicon Grown by MBE at Low Temperature
T. M. Burbaev, V. A. Kurbatov, A. O. Pogosov, M. M. Rzaev, and N. N. Sibeldin p. 207 abstract
Optical Properties of Structures with Ultradense Arrays of Ge QDs in an Si Matrix
A. G. Makarov, N. N. Ledentsov, A. F. Tsatsulnikov, G. E. Cirlin,
V. A. Egorov, V. M. Ustinov, N. D. Zakharov, and P. Werner p. 210 abstract
Population Inversion between Subbands in Quantum Wells
under the Conditions of L Intervalley Transfer
V. Ya. Aleshkin, A. A. Andronov, and A. A. Dubinov p. 215 abstract
Amorphous, Vitreous, and Porous Semiconductors
Synthesis of New CarbonNitrogen Nanoclusters
by Annealing Diamond-Like Carbon Films in Nitrogen
I. A. Faizrakhmanov, V. V. Bazarov, N. V. Kurbatova,
I. B. Khaibullin, and A. L. Stepanov p. 220 abstract
Effect of Thermal Annealing on Optical and Photoelectric Properties
of Microcrystalline Hydrogenated Silicon Films
A. G. Kazanski, H. Mell, and P. A. Forsh p. 224 abstract
Physics of Semiconductor Devices
Electrical Properties of Surface-Barrier Diodes Based on CdZnTe
L. A. Kosyachenko, I. M. Rarenko, Z. I. Zakharchuk, V. M. Sklyarchuk,
E. F. Sklyarchuk, I. V. Solonchuk, I. S. Kabanova, and E. L. Maslyanchuk p. 227 abstract
Internal Quantum Efficiency of Stimulated Emission
of ( = 1.55
m) InGaAsP/InP Laser Diodes
G. V. Skrynnikov, G. G. Zegrya, N. A. Pikhtin,
S. O. Slipchenko, V. V. Shamakhov, and I. S. Tarasov p. 233 abstract
Pleiades Publishing home page | journal home page | top
If you have any problems with this server, contact webmaster.