Contents
Semiconductors

Vol. 36, No. 2, 2002

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Atomic Structure and Nonelectronic Properties of Semiconductors

Effect of Dynamic Aging of Dislocations on the Deformation Behavior
of Extrinsic Semiconductors

B. V. Petukhov p. 121  abstract

Electronic and Optical Properties of Semiconductors

Electrical Properties of Silicon Layers Implanted with Ytterbium Ions

O. V. Aleksandrov, A. O. Zakhar’in, and N. A. Sobolev p. 126  abstract

Effect of Optical Radiation on Internal Friction in Piezoelectric Semiconductors
with Deep-Level Centers

V. I. Mitrokhin, S. I. Rembeza, V. V. Sviridov, and N. P. Yaroslavtsev p. 130  abstract

“LO-Phonon” Correlation between Picosecond Superluminescence Spectrum
and Special Features of Absorption Spectrum in GaAs
for Non-Fermi Distribution of Carriers Induced
by Picosecond Light Pulse

N. N. Ageeva, I. L. Bronevo, A. N. Krivonosov,
S. E. Kumekov, and S. V. Stegantsov p. 136  abstract

Linear Photovoltaic Effect in Gyrotropic Crystals

R. Ya. Rasulov, Yu. E. Salenko, and D. Kambarov p. 141  abstract

Optical Properties of Fluorite in a Wide Energy Range

V. V. Sobolev and A. I. Kalugin p. 148  abstract

Influence of Laser Pump Density on the Characteristic Time Constant
and the Intermediate-Field Electromodulation E₀ Component
of the Photoreflectance Signal

R. V. Kuz’menko, A. V. Ganzha, and E. P. Domashevskaya,
S. Hildenbrandt, and . Schreiber p. 153  abstract

Effect of Ionization on the Behavior of Silicon in Gallium Arsenide Subjected
to Electron-Beam Annealing

M. V. Ardyshev and V. M. Ardyshev p. 157  abstract

Annealing of Deep Boron Centers in Silicon Carbide

V. S. Ballandovich and E. N. Mokhov p. 160  abstract

Edge-Photoluminescence Concentration Dependence in Semi-Insulating Undoped GaAs

V. F. Kovalenko, M. B. Litvinova, and S. V. Shutov p. 167  abstract

Electrically Active Centers in Si:Er Light-Emitting Layers Grown
by Sublimation Molecular-Beam Epitaxy

V. B. Shmagin, B. A. Andreev, A. V. Antonov, Z. F. Krasil’nik,
V. P. Kuznetsov, O. A. Kuznetsov, E. A. Uskova,
C. A. J. Ammerlaan, and G. Pensl p. 171  abstract

Optical Absorption in (Pb_0.78Sn_0.22)_1–XIn_XTe (X = 0.001 – 0.005)

A. N. Ves p. 176  abstract

Distribution of Charge Carriers in Dissipative Semiconductor Structures

I. K. Kamilov, A. A. Stepurenko, and A. S. Kovalev p. 180  abstract

The Effect of Charge-Carrier Drift in the Built-in Quasi-Electric Field
on the Emission Spectrum for Graded-Gap Semiconductors

V. F. Kovalenko, A. Yu. Mironchenko, and S. V. Shutov p. 185  abstract

Semiconductor Structure, Interfaces, and Surfaces

Silicon Surface Treatment by Pulsed Nitrogen Plasma

F. B. Baimbetov, B. M. Ibraev, and A. M. Zhukeshov p. 189  abstract

Role of Surface Segregation in Formation of Abrupt Interfaces
in Si/Si_1–xGe_x Heterocompositions Grown by Molecular-Beam
Epitaxy with Combined Sources

L. K. Orlov and N. L. Ivina p. 191  abstract

Segregation of Mobile Ions on Insulator–Semiconductor Interfaces
in Metal–Insulator–Semiconductor Structures

S. G. Dmitriev and Yu. V. Markin p. 197  abstract

Low-Dimensional Systems

Photoluminescence of Anti-Modulation-Doped GaAs/AlGaAs Single Quantum
Well Structures Exposed to Hydrogen Plasma

Yu. A. Buma, G. Gobsch, R. Goldhahn, N. Stein,
A. Golombek, V. Nakov, and T. S. Cheng p. 203  abstract

Energy Spectrum and Optical Properties of the Quantum Dot–Impurity Center Complex

V. D. Krevchik and A. V. Levashov p. 208  abstract

Injection Excitation of Luminescence in Multilayer nc-Si/Insulator Structures

Yu. A. Berashevich, B. V. Kamenev, and V. E. Borisenko p. 213  abstract

Temperature Dependence of the Optical Energy Gap for the CdS_xSe_1–x Quantum Dots

V. P. Kunets, N. R. Kulish, Vas. P. Kunets, M. P. Lisitsa, and N. I. Malysh p. 219  abstract

The Dicke Superradiation in Quantum Heterostructures under Optical Pumping

A. I. Klimovskaya, E. G. Gule, and Yu. A. Driga p. 224  abstract

Electroluminescence from AlGaAs/GaAs Quantum-Cascade Structures
in the Terahertz Range

N. N. Zinov’ev, A.V. Andrianov, V. Yu. Nekrasov, L. V. Belyakov,
O. M. Sreseli, G. Hill, and J. M. Chamberlain p. 226  abstract

Amorphous, Vitreous, and Porous Semiconductors

Effect of Thermal Treatment on Structure and Properties of a-Si:H Films Obtained
by Cyclic Deposition

V. P. Afanas’ev, A. S. Gudovskikh, V. N. Nevedomski, A. P. Sazanov,
A. A. Sitnikova, I. N. Trapeznikova, and E. I. Terukov p. 230  abstract

Physics of Semiconductor Devices

Optimal Doping of the Drift Region in Unipolar Diodes and Transistors

A. S. Kyuregyan p. 235  abstract

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