Contents

Semiconductors

Vol. 55, No. 2, 2021

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Thermal Expansion and Thermal Conductivity of (In2S3)x(AgIn5S8)1 – x Alloys

I. V. Bodnar, A. A. Feshchenko and V. V. Khoroshko p. 133  abstract

Electronic Properties of Semiconductors

Magnetic Properties of Thin Epitaxial SiC Layers Grown by the Atom-Substitution Method on Single-Crystal Silicon Surfaces

N. T. Bagraev, S. A. Kukushkin, A. V. Osipov, V. V. Romanov, L. E. Klyachkin, A. M. Malyarenko and V. S. Khromov p. 137  abstract

Structural and Electronic Properties of ZnSiAs2, ZnSnAs2, and Their Mixed Crystals ZnSi1 – xSnxAs2

B. Mecheri, H. Meradji, S. Ghemid, H. Bendjeddou and M. Boukhtouta p. 146  abstract

Spectroscopy, Interaction with Radiation

Effect of Carrier Heating by the GaAs Picosecond Stimulated Emission on Duration of Emission

N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev and A. N. Krivonosov p. 154  abstract

Amplification Lengths of Spectral Components of Intrinsic Stimulated Picosecond Emission. Dependence of the Characteristic Relaxation Time of These Components on Their Amplification Lengths. Relation Between Stimulated and Spontaneous Emission Spectra in GaAs

N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev and A. N. Krivonosov p. 162  abstract

Radiative Recombination at Ion-Induced Defects in Cu(In,Ga)Se2 Alloy Thin Films

O. M. Borodavchenko, V. D. Zhivulko, A. V. Mudryí, M. V. Yakushev and I. A. Mogilnikov p. 168  abstract

Surfaces, Interfaces, and Thin Films

Molecular-Dynamics Study of Dimer Formation on a GaAs (001) Surface at Low Temperatures

N. D. Prasolov, A. A. Gutkin and P. N. Brunkov p. 175  abstract

Study of Alkali (Na,K)-Doped Cu2ZnSnS4 Thin Films Prepared by Sol–Gel Method

R. Hosseinpour, M. Izadifard and M. E. Ghazi p. 179  abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

D. S. Abramkin, M. O. Petrushkov, E. A. Emelyanov, A. V. Nenashev, M. Yu. Yesin, A. V. Vasev, M. A. Putyato, D. B. Bogomolov, A. K. Gutakovskiy and V. V. Preobrazhenskiy p. 194  abstract

Giant Magnetoresistance in a Metal–Organic Semiconductor–Metal Structure

A. A. Lachinov, D. D. Karamov and A. N. Lachinov p. 202  abstract

The Effect of the Ionizing Radiation Intensity on the Response of MOS Structures

O. V. Aleksandrov p. 207  abstract

Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers

A. S. Gazizulina, A. A. Nasirov, A. A. Nebesniy, P. B. Parchinskiy and Dojin Kim p. 214  abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Photoaccumulating Nanoheterostructures Based on Titanium Dioxide

E. A. Konstantinova, V. B. Zaitsev, E. V. Kytina and A. V. Marikutsa p. 219  abstract

Multicomponent Diamond-Like Semiconductors Based on the InBV–CdS System: Bulk and Surface Properties

I. A. Kirovskaya, T. N. Filatova and P. E. Nor p. 228  abstract

Carbon Systems

Model Estimates of the Quantum Capacitance of Amorphous and Epitaxial Graphene-Like Compounds

S. Yu. Davydov p. 234  abstract

Physics of Semiconductor Devices

High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination

P. A. Ivanov, N. M. Lebedeva, N. D. Il’inskaya, M. F. Kudoyarov, T. P. Samsonova, O. I. Kon’kov and Yu. M. Zadiranov p. 243  abstract

Taking Account of the Substrate in Calculation of the Electrical Resistance of Microdisk Lasers

A. E. Zhukov, N.V. Kryzhanovskaya, E. I. Moiseev, A. M. Nadtochiy, M. V. Maximov and A. S. Dragunova p. 250  abstract

TCAD Simulation of High-Voltage 4H-SiC Diodes with an Edge Semi-Insulating Region

P. A. Ivanov and N. M. Lebedeva p. 256  abstract

Analysis and Measurement of Capacitance Characteristics of a Novel Light-Controlled Dual-Directional Gate Silicon-Controlled Rectifier

F. Yan, Y. Wang, X. L. Jin, Y. Peng, J. Luo and J. Yang p. 262  abstract

Recent Developments in Semipolar InGaN Laser Diodes

Aparna Das p. 272  abstract

Fabrication, Treatment, and Testing of Materials and Structures

Three-Component Zone-Melting Method: Modeling of the Concentration-Component Distribution in Single Crystals of Ge–Si Solid Solutions

Z. A. Aghamaliyev p. 283  abstract