Vol. 54, No. 2, 2020

Semiconductors

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Thermal Conductivity of Cu₂ZnGe_{1 –} _xSn_xSe₄ Alloys

I. V. Bodnar p. 159 abstract

Electronic Properties of Semiconductors

Negative Differential Conductivity of Lanthanum-Oxide-Based Structures

A. Igityan, N. Aghamalyan, R. Hovsepyan, S. Petrosyan, G. Badalyan, I. Gambaryan, A. Papikyan and Y. Kafadaryan p. 163 abstract

Fabrication and Analysis of the Current Transport Mechanism of Ni/n-GaN Schottky Barrier Diodes through Different Models

S. Kumar, M. V. Kumar and S. Krishnaveni p. 169 abstract

Surfaces, Interfaces, and Thin Films

Profiling Mobility Components near the Heterointerfaces of Thin Silicon Films

E. G. Zaitseva, O. V. Naumova and B. I. Fomin p. 176 abstract

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Ge/Si Core/Shell Quantum Dots in an Alumina Matrix: Influence of the Annealing Temperature on the Optical Properties

O. M. Sreseli, N. A. Bert, V. N. Nevedomskii, A. I. Lihachev, I. N. Yassievich, A. V. Ershov, A. V. Nezhdanov, A. I. Mashin, B. A. Andreev and A. N. Yablonsky p. 181 abstract

Molecular States of Composite Fermions in Self-Organized InP/GaInP Quantum Dots in Zero Magnetic Field

A. M. Mintairov p. 190 abstract

Influence of Radiation Defects Induced by Low-Energy Protons at a Temperature of 83 K on the Characteristics of Silicon Photoelectric Structures

N. M. Bogatov, L. R. Grigorian, A. I. Kovalenko, M. S. Kovalenko, F. A. Kolokolov and L. S. Lunin p. 196 abstract

Amorphous, Vitreous, and Organic Semiconductors

Structural and Dielectric Study of Thin Amorphous Layers of the Ge–Sb–Te System Prepared by RF Magnetron Sputtering

R. A. Castro-Arata, V. M. Stozharov, D. M. Dolginsev, A. A. Kononov, Y. Saito, P. Fons, J. Tominaga, N. I. Anisimova and A. V. Kolobov p. 201 abstract

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Dielectric Spectroscopy and Features of the Mechanism of the Semiconductor–Metal Phase Transition in VO₂ Films

A. V. Ilinskiy, R. A. Kastro, M. E. Pashkevich and E. B. Shadrin p. 205 abstract

Effect of Temperature on the Morphology of Planar GaAs Nanowires (Simulation)

A. A. Spirina and N. L. Shwartz p. 212 abstract

Energy-Efficient Gas Sensors Based on Nanocrystalline Indium Oxide

E. A. Forsh and E. A. Guseva p. 217 abstract

Carbon Systems

Exactly Solvable Model Problem on a Graphene Nanoribbon with Zigzag Edges

S. Yu. Davydov and A. V. Zubov p. 222 abstract

Structural and Photoluminescence Properties of Graphite-Like Carbon Nitride

A. V. Baglov, E. B. Chubenko, A. A. Hnitsko, V. E. Borisenko, A. A. Malashevich and V. V. Uglov p. 228 abstract

Physics of Semiconductor Devices

Model of the Negative-Bias Temperature Instability of p-MOS Transistors

O. V. Aleksandrov p. 233 abstract

Model of the Effect of the Gate Bias on MOS Structures under Ionizing Radiation

O. V. Aleksandrov and S. A. Mokrushina p. 240 abstract

Effect of Temperature on the Characteristics of 4H-SiC UV Photodetectors

E. V. Kalinina, G. N. Violina, I. P. Nikitina, E. V. Ivanova, V. V. Zabrodski, M. Z. Shvarts, S. A. Levina and A. V. Nikolaev p. 246 abstract

Long-Wavelength LEDs in the Atmospheric Transparency Window of 4.6–5.3 μm

V. V. Romanov, E. V. Ivanov, A. A. Pivovarova, K. D. Moiseev and Yu. P. Yakovlev p. 253 abstract

Edge-Termination Technique for High-Voltage Mesa-Structure 4H-SiC Devices: Negative Beveling

N. M. Lebedeva, N. D. Il’inskaya and P. A. Ivanov p. 258 abstract

Comparative Analysis of Injection Microdisk Lasers Based on InGaAsN Quantum Wells and InAs/InGaAs Quantum Dots

E. I. Moiseev, M. V. Maximov, N. V. Kryzhanovskaya, O. I. Simchuk, M. M. Kulagina, S. A. Kadinskaya, M. Guina and A. E. Zhukov p. 263 abstract

Fabrication, Treatment, and Testing of Materials and Structures

Investigation of the Influences of Post-Thermal Annealing on Physical Properties of TiO₂ Thin Films Deposited by RF Sputtering

H. E. Doghmane, T. Touam, A. Chelouche, F. Challali and B. Bordji p. 268 abstract

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