Contents
Semiconductors

Vol. 35, No. 2, 2001

Simultaneous English language translation of the journal is available from MAIK “Nauka / Interperiodica” (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors ISSN 1063-7826.

Electronic and Optical Properties of Semiconductors

Study of Photoluminescence of SiO_xN_y Films Implanted with Ge⁺ Ions
and Annealed under the Conditions of Hydrostatic Pressure

I. E. Tyschenko, K. S. Zhuravlev, E. N. Vandyshev, A. Misiuk, R. A. Yankov,
L. Rebohle, and W. Skorupa p. 125  abstract

Quasi-Local Impurity States in Uniaxially Compressed p-Type Ge

A. A. Abramov, V. N. Tulupenko, and D. A. Firsov p. 132  abstract

The Effect of Stress Fields Produced by Growth Defects on the Dielectric Photoresponse
of Cd_{1 – x}Zn_xTe Crystals

I. A. Klimenko, V. K. Komar’, V. P. Migal’, and D. P. Nalivako p. 135  abstract

Nickel Impurity Excitons and Photoinduced Lattice Distortion in ZnSe_{1 – y}S_y:Ni
and Zn_{1 – x}Cd_xSe:Ni Solid Solutions

V. I. Sokolov and V. N. Starovotova p. 138  abstract

The Edge Ultraviolet Luminescence of GaN:Zn Films Activated
in a Nitrogen Plasma

A. N. Georgobiani, A. N. Gruzintsev, U. A. Aminov, M. O. Vorob’ev, and I. I. Khodos p. 144  abstract

Reflection Spectra of Doped Bismuth–Antimony Crystals in the Far-Infrared Region
of the Spectrum

V. M. Grabov and N. P. Stepanov p. 149  abstract

The Effect of High-Temperature Epitaxial SiC Layer Growth on the Structure
of Porous Silicon Carbide

N. S. Savkina, V. V. Ratnikov, and V. B. Shuman p. 153  abstract

Hopping Transport in Doped (Pb_0.78Sn_0.22)_{1 – x}In_xTe Solid Solutions

Yu. I. Ravich and S. A. Nemov p. 158  abstract

The Spread of Cross Section for Electron Capture by a Trap
with a Discrete Energy Level in -La₂S₃ Crystals

E. M. Zobov and M. A. Rizakhanov p. 164  abstract

Photoluminescence of Cu_GaTe_As and Cu_GaSn_Ga Complexes
in n-GaAs under Resonance Polarized Excitation

N. S. Averkiev, A. A. Gutkin, and V. E. Sedov p. 170  abstract

Electrical Conductivity of n-InSb Films in Strong Electric Fields

Yu. A. Nikol’ski and S. E. Zyuzin p. 175  abstract

Surface Gettering of Background Impurities and Defects in GaAs Wafers

L. S. Vlasenko, A. T. Gorelenok, V. V. Emtsev, A. V. Kamanin, D. S. Poloskin, and N. M. Shmidt p. 177  abstract

Semiconductor Structures, Interfaces, and Surfaces

Mechanism of Reverse Current in the Al/p-InP Schottky Diodes

P. A. Pipinys, A. K. Rimeika, V. A. Lapeika, and A. V. Pipiniene p. 181  abstract

Quasi-Static Ion Currents in Thin Insulating Films of Metal–Insulator–Semiconductor Structures
and the Distribution of Ions in the Films

S. G. Dmitriev and Yu. V. Markin p. 185  abstract

Simulation of Hysteresis in a Metal–Ferroelectric–Semiconductor Structure

L. S. Berman p. 193  abstract

Investigation of a Change in the Chemical Composition of the Surface
of Cd_xHg_{1 – x}Te Samples as a Result of Treatment by N₂O and H₂ Gases Activated
in a High-Frequency Discharge

V. V. Vasil’ev, T. I. Zakhar’yash, V. G. Kesler, I. O. Parm, and A. P. Solov’ev p. 196  abstract

Tunneling via Impurity States Related to the X Valley in a Thin AlAs Barrier

Yu. N. Khanin, K. S. Novoselov, and E. E. Vdovin p. 199  abstract

Spectra of the Field and Current Oscillations in Superlattices Exposed
to Terahertz Laser Radiation

Yu. A. Romanov and Yu. Yu. Romanova p. 204  abstract

Investigation of the SiC/(SiC)_{1 – x}(AlN)_x Heterostructures by the Method
of Capacitance–Voltage Characteristics

M. K. Kurbanov, B. A. Bilalov, Sh. A. Nurmagomedov, and G. K. Safaraliev p. 209  abstract

Low-Dimensional Systems

Electron Localization and Bloch Oscillations in Quantum-Dot Superlattices
under a Constant Electric Field

I. A. Dmitriev and R. A. Suris p. 212  abstract

Amorphous, Vitreous, and Porous Semiconductors

Optical Properties of Amorphous Carbon Films Deposited by Magnetron Sputtering
of Graphite

V. I. Ivanov-Omski, A. V. Tolmatchev, and S. G. Yastrebov p. 220  abstract

Contrast Enhancement in Image Transfer via Interaction of UV Radiation
with Inorganic Photoresist Films

N. A. Kaliteevskaya and R. P. Sesyan p. 226  abstract

Investigation of Surface Morphology of Copper-Modified Amorphous Carbon Films

T. K. Zvonareva, V. I. Ivanov-Omski, S. G. Yastrebov, A. O. Golubok,
O. M. Gorbenko, and V. V. Rozanov p. 230  abstract

Optical Study of InP Quantum Dots

D. A. Vinokurov, V. A. Kapitonov, D. N. Nikolaev, Z. N. Sokolova, and I. S. Tarasov p. 235  abstract

Physics of Semiconductor Devices

High-Power High-Voltage Bipolar Transistors Based on Complex Semiconductor Structures

M. Yu. Volokobinski, I. N. Komarov, T. V. Matyukhina, V. I. Reshetnikov,
A. A. Rush, I. V. Falina, and A. S. Yastrebov p. 238  abstract

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