Contents
Semiconductors
Vol. 35, No. 2, 2001
Simultaneous
English language translation of the journal is available from
MAIK Nauka / Interperiodica (Russia).
Distributed worldwide by the American Institute of Physics. Semiconductors
ISSN 1063-7826.
Electronic and Optical Properties of Semiconductors
Study of
Photoluminescence of SiOxNy
Films Implanted with Ge+ Ions
and Annealed under the Conditions of Hydrostatic Pressure
I. E. Tyschenko, K. S. Zhuravlev, E. N. Vandyshev, A. Misiuk, R. A. Yankov,
L. Rebohle, and W. Skorupa p. 125 abstract
Quasi-Local Impurity States in Uniaxially Compressed p-Type Ge
A. A. Abramov, V. N. Tulupenko, and D. A. Firsov p. 132 abstract
The Effect of
Stress Fields Produced by Growth Defects on the Dielectric
Photoresponse
of Cd1 xZnxTe
Crystals
I. A. Klimenko, V. K. Komar, V. P. Migal, and D. P. Naliva
ko p. 135 abstract
Nickel Impurity
Excitons and Photoinduced Lattice Distortion in ZnSe1
ySy:Ni
and Zn1 xCdxSe:Ni
Solid Solutions
V. I. Sokolov and V. N. Starovo
tova p. 138 abstract
The Edge
Ultraviolet Luminescence of GaN:Zn Films Activated
in a Nitrogen Plasma
A. N. Georgobiani, A. N. Gruzintsev, U. A. Aminov, M. O. Vorobev, and I. I. Khodos p. 144 abstract
Reflection Spectra
of Doped BismuthAntimony Crystals in the Far-Infrared
Region
of the Spectrum
V. M. Grabov and N. P. Stepanov p. 149 abstract
The Effect of
High-Temperature Epitaxial SiC Layer Growth on the Structure
of Porous Silicon Carbide
N. S. Savkina, V. V. Ratnikov, and V. B. Shuman p. 153 abstract
Hopping Transport in Doped (Pb0.78Sn0.22)1 xInxTe Solid Solutions
Yu. I. Ravich and S. A. Nemov p. 158 abstract
The Spread of
Cross Section for Electron Capture by a Trap
with a Discrete Energy Level in -La2S3
Crystals
E. M. Zobov and M. A. Rizakhanov p. 164 abstract
Photoluminescence
of CuGaTeAs and CuGaSnGa
Complexes
in n-GaAs under Resonance Polarized Excitation
N. S. Averkiev, A. A. Gutkin, and V. E. Sedov p. 170 abstract
Electrical Conductivity of n-InSb Films in Strong Electric Fields
Yu. A. Nikolski
and S. E. Zyuzin p. 175 abstract
Surface Gettering of Background Impurities and Defects in GaAs Wafers
L. S. Vlasenko, A. T. Gorelenok, V. V. Emtsev, A. V. Kamanin, D. S. Poloskin, and N. M. Shmidt p. 177 abstract
Semiconductor Structures, Interfaces, and Surfaces
Mechanism of Reverse Current in the Al/p-InP Schottky Diodes
P. A. Pipinys, A. K. Rimeika, V. A. Lapeika, and A. V. Pipiniene p. 181 abstract
Quasi-Static Ion
Currents in Thin Insulating Films of
MetalInsulatorSemiconductor Structures
and the Distribution of Ions in the Films
S. G. Dmitriev and Yu. V. Markin p. 185 abstract
Simulation of Hysteresis in a MetalFerroelectricSemiconductor Structure
L. S. Berman p. 193 abstract
Investigation of a
Change in the Chemical Composition of the Surface
of CdxHg1 xTe
Samples as a Result of Treatment by N2O and H2
Gases Activated
in a High-Frequency Discharge
V. V. Vasilev, T. I. Zakharyash, V. G. Kesler, I. O. Parm, and A. P. Solovev p. 196 abstract
Tunneling via Impurity States Related to the X Valley in a Thin AlAs Barrier
Yu. N. Khanin, K. S. Novoselov, and E. E. Vdovin p. 199 abstract
Spectra of the
Field and Current Oscillations in Superlattices Exposed
to Terahertz Laser Radiation
Yu. A. Romanov and Yu. Yu. Romanova p. 204 abstract
Investigation of
the SiC/(SiC)1 x(AlN)x
Heterostructures by the Method
of CapacitanceVoltage Characteristics
M. K. Kurbanov, B. A. Bilalov, Sh. A. Nurmagomedov, and G. K. Safaraliev p. 209 abstract
Low-Dimensional Systems
Electron
Localization and Bloch Oscillations in Quantum-Dot Superlattices
under a Constant Electric Field
I. A. Dmitriev and R. A. Suris p. 212 abstract
Amorphous, Vitreous, and Porous Semiconductors
Optical Properties
of Amorphous Carbon Films Deposited by Magnetron Sputtering
of Graphite
V. I. Ivanov-Omski
, A. V. Tolmatchev, and S. G. Yastrebov p. 220 abstract
Contrast
Enhancement in Image Transfer via Interaction of UV Radiation
with Inorganic Photoresist Films
N. A. Kaliteevskaya and R. P. Se
syan p. 226 abstract
Investigation of Surface Morphology of Copper-Modified Amorphous Carbon Films
T. K. Zvonareva, V. I. Ivanov-Omski
, S. G. Yastrebov, A. O. Golubok,
O. M. Gorbenko, and V. V. Rozanov p. 230 abstract
Optical Study of InP Quantum Dots
D. A. Vinokurov, V. A. Kapitonov, D. N. Nikolaev, Z. N. Sokolova, and I. S. Tarasov p. 235 abstract
Physics of Semiconductor Devices
High-Power High-Voltage Bipolar Transistors Based on Complex Semiconductor Structures
M. Yu. Volokobinski
, I. N. Komarov, T. V. Matyukhina, V. I. Reshetnikov,
A. A. Rush, I. V. Falina, and A. S. Yastrebov p. 238 abstract
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